AI 中文总结
研究交变磁性CrSb多铁隧道结中的巨型多态电阻开关，利用密度泛函理论等方法，揭示由界面机制决定的多态电阻开关特性，单层和双层In₂Se₃结展现不同电阻状态及相关特性，确立相关设计原则。
AI 中文摘要
交变磁体可实现无杂散磁场的自旋分裂输运，然而将其动量依赖的自旋分裂转化为强隧道结响应需要界面选择的隧穿通道。本文利用密度泛函理论结合非平衡格林函数计算，证明了CrSb/α-In₂Se₃交变磁性多铁隧道结中的巨型多态电阻开关。该响应不仅由CrSb的体自旋分裂决定，还由一种对称选择的界面机制决定，其中Cr/Sb端接和h-BN或石墨烯插入层决定自旋通道匹配，而铁电极化重塑静电势垒。对称和非对称端接颠倒了平行/反平行奈尔矢量构型与高/低电阻状态之间的对应关系，表明界面Cr矩的实际排列选择了主导隧穿通道。单层In₂Se₃结表现出四个非易失性电阻状态，隧穿磁电阻（TMR）和隧穿电阻（TER）分别达到1626%和2206%，在费米能级移动时增加到9576%和4144%。有限偏置计算进一步揭示了强大的自旋过滤和可调自旋极化电流。将势垒扩展到双层In₂Se₃引入了层间极化耦合，实现了八个电阻状态，最大TMR和TER值分别为3.77×10⁴%和4.18×10⁵%。这些结果确立了界面对称性、自旋通道匹配和铁电势垒重构作为无杂散场多态自旋电子隧道器件的设计原则。
英文摘要
Altermagnets enable spin-split transport without stray magnetic fields, yet converting their momentum-dependent spin splitting into a strong tunnel-junction response requires interface-selected tunneling channels. Here, using density functional theory combined with nonequilibrium Green's function calculations, we demonstrate giant multistate resistance switching in CrSb/$α$-In$_2$Se$_3$ altermagnetic multiferroic tunnel junctions. The response is governed not by the bulk spin splitting of CrSb alone, but by a symmetry-selected interfacial mechanism in which Cr/Sb terminations and \textit{h}-BN or graphene insertion layers determine spin-channel matching, while ferroelectric polarization reshapes the electrostatic barrier. Symmetric and asymmetric terminations reverse the correspondence between parallel/antiparallel Néel-vector configurations and high-/low-resistance states, showing that the actual alignment of interfacial Cr moments selects the dominant tunneling channels. Monolayer-In$_2$Se$_3$ junctions exhibit four nonvolatile resistance states, with tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) reaching 1626\% and 2206\%, respectively, and increasing to 9576\% and 4144\% upon Fermi-level shifting. Finite-bias calculations further reveal robust spin filtering and tunable spin-polarized currents. Extending the barrier to bilayer In$_2$Se$_3$ introduces interlayer polarization coupling, enabling eight resistance states with maximum TMR and TER values of $3.77\times10^{4}\%$ and $4.18\times10^{5}\%$, respectively. These results establish interface symmetry, spin-channel matching, and ferroelectric barrier reconstruction as design principles for stray-field-free multistate spintronic tunnel devices.
Comments21 pages, 9 figures
