界面工程Hf0 .5Zr0.5O2隧道器件中导电通道的阻断拓宽了铁电阻变窗口
Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
摘要：
Hf0.5Z0.5O2（HZO）薄膜含有晶界网络。例如，在（001）SrTiO 3上的（111）HZO外延膜中，孪晶正交（o-HZO）铁电微晶与o-HZO和残余顺电单斜（m-HZO）相之间的晶界共存。除了真正的铁电极化切换之外，这些晶界还有助于电阻切换响应，并且对器件性能具有不利影响。在这里，它示出，通过使用合适的纳米覆盖层沉积在HZO膜上，可以实现隧道器件的操作窗口的根本改善。结晶SrTiO 3和非晶AlOx探索作为覆盖层。据观察，这些层保形地涂覆HZO表面，并允许增加功能铁电结的产量和均匀性，同时加强耐久性。数据表明，覆盖层阻止离子类传输通道跨越晶界。这表明，他们作为氧供应商的吸氧剂在HZO晶界。在这种情况下，可以设想，这些和其他氧化物也可以探索和测试完全兼容的CMOS技术。
英文摘要：
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric capping layers deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as capping layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of functioning ferroelectric junctions while strengthening endurance. Data show that the capping layers block ionic-like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen-getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies.
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