Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable ultralow-voltage and non-volatile electronic functionality in two-dimensional materials; however, achieving stable polarization control without charge trapping has remained a persistent challenge. Here, we demonstrate a moire-engineered ferroelectric field-effect transistor (FeFET) utilizing twisted WSe2 bilayers that leverages atomically clean van der Waals interfaces to achieve efficient polarization-channel coupling and trap-suppressed, ultralow-voltage operation (subthreshold swing of 64 mV per decade). The device exhibits a stable non-volatile memory window of 0.10 V and high mobility, exceeding the performance of previously reported two-dimensional FeFET and matching that of advanced silicon-based devices. In addition, capacitance-voltage spectroscopy, corroborated by self-consistent Landau-Ginzburg-Devonshire modeling, indicates ultrafast ferroelectric switching (~0.5 microseconds). These results establish moire-engineered ferroelectricity as a practical and scalable route toward ultraclean, low-power, and non-volatile 2D electronics, bridging atomistic lattice engineering with functional device architectures for next-generation memory and logic technologies.
Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
Indian Institute of Technology Mandi（印度技术学院曼迪分校）；CSIR-National Physical Laboratory（印度科学工业研究理事会国家物理实验室）；Academy of Scientific and Innovative Research (AcSIR)（科学与创新研究学院）；Indian Institute of Science（印度科学学院）；National Institute of Material Science（国家物质科学研究所）
Multi Moire Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation
Indian Institute of Technology Kharagpur（印度理工学院卡拉格普尔分校）；Universidade Federal de Minas Gerais（米纳斯吉拉斯联邦大学）；Aarhus University（奥胡斯大学）；Indian Institute of Technology Goa（印度理工学院果阿分校）；Indian Institute of Science Education and Research Tirupati（蒂鲁帕蒂科学教育研究所）；KIIT Deemed to be University（KIIT认定大学）
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Ferroelectric hysteresis in singly aligned graphene-hBN moiré superlattices
CIC nanoGUNE（纳米科技联合研究中心）；University of the Basque Country (UPV/EHU)（巴斯克大学）；National Institute for Materials Science（物质材料研究机构）；Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU（物质物理中心（CFM-MPC）CSIC-巴斯克大学联合中心）
Establishing Atomic Coherence in Twisted Oxide Membranes Containing Volatile Elements
Oak Ridge National Laboratory（橡树岭国家实验室）；North Carolina State University（北卡罗来纳州立大学）；Sungkyunkwan University（成均馆大学）；Institute for Basic Science（基础科学研究院）；Duke University（杜克大学）
The recently discovered ferroelectricity of van der Waals bilayers offers an unconventional route to improve the performance of devices. Key parameters such as switching field and speed depend on the static and dynamic properties of domain walls (DWs). Here we theoretically explore the properties of textures in stacking-engineered ferroelectrics from first principles. Employing a machine-learning potential model, we present results of large-scale atomistic simulations of stacking DWs and Moiré structure of boron nitride bilayers. We predict that the competition between the switching barrier of…
We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε…
Defect-engineered scaling of lead-free ferroelectrics with ultralow-voltage switching
North Carolina State University（北卡罗来纳州立大学）；Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；Cornell University（康奈尔大学）；Argonne National Laboratory（阿贡国家实验室）
2D ferroelectrics with robust polarization down to atomic thicknesses provide novel building blocks for functional heterostructures. Experimental reports, however, remain scarce because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a non-ferroelectric parent compound via employing van der Waals assembly. Parallel-stacked bilayer boron nitride is shown to exhibit out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed via the resistance of an adja…
Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications
Imaging topological polar structures in marginally twisted 2D semiconductors
Monash University（莫纳什大学）；John A. Paulson School of Engineering and Applied Sciences, Harvard University（哈佛大学约翰·A·保尔森工程与应用科学学院）；Nanyang Technological University Singapore（新加坡南洋理工大学）；National University of Singapore（新加坡国立大学）；Flinders University（弗林德斯大学）；Melbourne Centre for Nanofabrication（墨尔本纳米制造中心）；Pennsylvania State University（宾夕法尼亚州立大学）；Swinburne University of Technology（斯威本科技大学）；National Institute for Materials Science（日本物质材料研究机构）
