We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenom…
Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer-interface. More importantly, by doping the Bi2Te3 laye…
We formulate the effective Hamiltonian of Rashba spin-orbit coupling (RSOC) in $\mathrm{LaAlO_3/SrTiO_3}$ (LAO/STO) heterostructures. We derive analytical expressions of properties, e.g., Rashba parameter, effective mass, band edge energy and orbital occupancy, as functions of material and tunable heterostructure parameters. While linear RSOC is dominant around the $Γ$-point, cubic RSOC becomes significant at the higher-energy anti-crossing region. We find that linear RSOC stems from the structural inversion asymmetry (SIA), while the cubic term is induced by both SIA and bulk asymmetry. Furth…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and transition metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM IrMn3 thin films with coexisting AFM phases into comp…
The shortcomings of mono-component systems, e.g., the gapless nature of graphene, the lack of air-stability in phosphorene, etc. have drawn great attention toward stacked materials expected to show interesting electronic and optical properties. Using the tight-binding approach and the Green's function method, we investigate the electronic properties of armchair-edged lateral phosphorene/graphene heterostructures, which are either semiconductor/semiconductor or semiconductor/metal heterostructures, depending on the width of graphene ribbon. It is found that the system is narrow-gapped, and the …
Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we show that PL can be recovered by engineering multilayer heterostructures, with the band transition reserved to be direct type. We report emission from layer engineered interlayer excitons from these mult…
Topochemically-engineered coexistence of charge and spin orders in intercalated endotaxial heterostructures
University of California, Berkeley（加州大学伯克利分校）；Molecular Foundry, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室分子发现中心）；Jawaharlal Nehru Centre for Advanced Scientific Research（贾瓦哈拉尔·尼赫鲁高级科学研究中心）；Max-Planck-Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）
We propose a tubal van der Waals heterostructure by rolling up the graphene and MoS2 atomic layers into a tubal form. We illustrate that the interlayer space for the tubal van der Waals heterostructure can be varied in a specific range, which is determined by the competition between the interlayer van der Waals force and the mechanical properties of the atomic layers. The variability of the interlayer space can be utilized to efficiently tune mechanical properties of the tubal van der Waals heterostructure. More specifically, we demonstrate that the Poisson's ratio of the tubal van der Waals h…
Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By t…
We report a detailed study of the magnetocaloric effect in heterostructures of La2NiMnO6 and La2/3Sr1/3MnO3. The shape, width and magnitude of the temperature dependence of the magnetic entropy change ($ΔS_{m}$) for these multilayer samples can be tuned and controlled by changing their layout. A large $ΔS_{m}$ over a wide temperature range which goes beyond room temperature is observed in all samples. We observe a temperature-independent table-top-like $ΔS_{m}$ over a temperature range as large as 100 K in the trilayer samples. La2NiMnO6 double perovskite with multiple magnetic phase transitio…
Tunnel-Barrier-Engineered Ultrafast Demagnetization and Spin Transport in Graphene-Based Heterostructures
S. N. Bose National Center for Basic Sciences（S.N. 玻色基础科学国家中心）；Indian Institute of Science Education and Research Kolkata（加尔各答印度科学与教育研究所）；Uppsala University（乌普萨拉大学）
Two-dimensional transition metal-dichalcogenides are emerging as efficient and cost-effective electrocatalysts for hydrogen evolution reaction (HER). However, only the edge sites of their trigonal prismatic phase show HER-electrocatalytic properties, while the basal plane, which is absent of defective/unsaturated sites, is inactive. Here, we tackle the key challenge that is increasing the number of electrocatalytic sites by designing and engineering heterostructures composed of single-/few-layer MoSe2 flakes and carbon nanomaterials (graphene or single-wall carbon nanotubes (SWNTs)) produced b…
Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy excitonic state. In this work, we calculate the electronic and optical properties of such heterostructures with the first-principles GW+Bethe-Salpeter Equation (BSE) method and reveal the important role of interlayer coupling in deciding the excited-state properties, including the band alignment and excitonic properties. Our calculation shows that due to the interla…
Gate-tunable synthetic antiferromagnetism with nonrelativistic spin splitting in a graphene/MnS/graphene heterostructure
Institute of Informatics, Slovak Academy of Sciences（斯洛伐克科学院信息学研究所）；Faculty of Physics, University of Belgrade（贝尔格莱德大学物理学院）；Institute of Physics, Pavol Jozef Šafárik University in Košice（科希策帕沃尔·约瑟夫·沙法里克大学物理研究所）；Institute of Experimental Physics, Slovak Academy of Sciences（斯洛伐克科学院实验物理研究所）；New Technologies Research Centre, University of West Bohemia（西波希米亚大学新技术研究中心）
Powerful and Tunable THz Emitters Based on the Fe/Pt Magnetic Heterostructure
在这项工作中，我们报告了我们的研究在Fe/Pt磁性异质结构的太赫兹辐射。我们已经进行了全面的调查太赫兹发射Fe/Pt磁性异质结构，采用时域太赫兹光谱。我们发现，通过适当调整的Fe或Pt层的厚度，可以大大提高这种类型的异质结构的太赫兹发射。我们进一步证明了新设计的多层（Pt/Fe/MgO）$_n$（n=3）发射的THz场强可以达到~1.6 kV/cm，这与偏压为4 kV/cm的传统GaAs天线的值相当，100微米GaP和2 mm ZnTe。首次证明了太赫兹波的强度和光谱可以通过施加在图案化Fe/Pt磁性异质结构上的磁场来调节。因此，这些研究结果有望新的方法来制造强大的和可调谐的太赫兹发射器的磁性异质结构的基础上。
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A thin n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and reproducibility of the sample properties. In heterostructures of BS with p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrate intrinsic band bending effects to tune the electroni…
Heterostructures constructed from two-dimensional building blocks have shown promise for field-effect transistors, memory devices, photosensors and other electronic applications1,2. 2D nanosheet crystals can be constructed into multilayer heterostructures using layer-by-layer methods3, but that method cannot be used to fabricate large-scale and thick heterostructures, due to the time-consuming nature and low efficiency of the process. An alternative approach to deposit different two-dimensional materials is by inkjet printing4-7. Here we show the fabrication of a nanosheet supercapacitor by in…
Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or…
The recent discovery of natural biaxial hyperbolicity in van der Waals crystals, such as $α$-MoO$_3$, has opened up new avenues for mid-IR nanophotonics due to their deep subwavelength phonon-polaritons. However, a significant challenge is the lack of active tunability of these hyperbolic phonon polaritons. In this work, we investigate heterostructures of graphene and $α$-MoO$_3$ for actively tunable hybrid plasmon phonon polariton modes via electrostatic gating in the mid-infrared spectral region. We observe a unique propagation direction dependent hybridization of graphene plasmon polaritons…
Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromiu…
Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scanning electron (SEM) and atomic force microscopy (AFM) shows a limited number of defects on a macroscopic scale. Fourier Transform Infrared (FTIR) and Raman spectroscopy confirm the presence of rGOx, and …
Building on discoveries in graphene and two-dimensional (2D) transition metal dichalcogenides, van der Waals (VdW) layered heterostructures - stacks of such 2D materials - are being extensively explored with resulting new discoveries of novel electronic and magnetic properties in the ultrathin limit. Here we review a class of naturally occurring heterostructures - so called misfits - that combine disparate VdW layers with complex stacking. Exhibiting remarkable structural complexity and diversity of phenomena, misfits provide a platform on which to systematically explore the energetics and loc…
Using the density functional theory of electronic structure, we compute the anisotropic dielectric response of bulk black phosphorus subject to strain. Employing the obtained permittivity tensor, we solve Maxwell's equations and study the electromagnetic response of a layered structure comprising a film of black phosphorus stacked on a metallic substrate. Our results reveal that a small compressive or tensile strain, $\sim 4\%$, exerted either perpendicular or in the plane to the black phosphorus growth direction, efficiently controls the epsilon-near-zero response, and allows a perfect absorp…
Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures
Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China（合肥微尺度物质科学国家研究中心，中国科学技术大学）；Department of Physics, University of Science and Technology of China（中国科学技术大学物理学院）；Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences（中国科学院合肥物质科学研究院固体物理研究所材料物理重点实验室）；School of Physics, Northwest University（西北大学物理学院）；Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences（中国科学院强磁场科学中心极端条件凝聚态物理安徽省重点实验室）
Manipulating the interlayer magnetic coupling in van der Waals magnetic materials and heterostructures is the key to tailoring their magnetic and electronic properties for various electronic applications and fundamental studies in condensed matter physics. By utilizing the MnBi2Te4-family compounds and their heterostructures as a model system, we systematically studied the dependence of the sign and strength of interlayer magnetic coupling on constituent elements by using first-principles calculations. It was found that the coupling is a long-range superexchange interaction mediated by the cha…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet La$_2$CuO$_4$ and ferromagnetic (La,Sr)MnO$_3$ synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can b…
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between differe…
The unique physics found in moiré superlattices of twisted or lattice-mismatched atomic layers hold great promise for future quantum technologies. However, twisted configurations are typically thermodynamically unfavorable, making the accurate twist angle control in direct growth implausible. While rotationally aligned moiré superlattices based on lattice-mismatched layers such as WSe2/WS2 can be synthesized, they lack the critical tunability of the moiré period and the moiré formation mechanisms are not well-understood. Here, we report the scalable, thermodynamically driven van der Waals epit…
