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arXiv 2605.09201cond-mat.mes-hall
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垂直自旋转移扭矩磁随机存取存储器中的磁化对齐

Magnetization alignment in spin-transfer-torque magnetic random-access memory

Simon Fraser University(西蒙菲莎大学);University of Vienna(维也纳大学)

Afan Terko, George Lertzman-Lepofsky, Dieter Suess, Claas Abert, Erol Girt

AI总结:

研究垂直自旋转移扭矩磁随机存取存储器中合成反铁磁层磁化对齐的微磁学特性,通过实验参数分析30nm直径三层纳米柱的平衡态,并揭示不对称性对稳定反平行态的影响。

摘要:

垂直自旋转移扭矩磁随机存取存储器(p-STT-MRAM)的可靠操作需要控制合成反铁磁层(SAF)内的磁化对齐。然而,在纳米柱尺寸下,设备可能表现出扩展薄片中不存在的磁态。本文通过实验驱动的材料参数,系统研究了30nm直径三层p-STT-MRAM纳米柱的微磁学特性,并将平衡态作为各向同性及各向异性层间交换耦合函数进行映射。相图显示,引入SAF层之间磁化饱和、各向异性及厚度的不对称性可降低稳定反平行SAF态所需耦合强度并抑制竞争态。最小能量路径计算显示,对于非共线反平行SAF态,增加SAF不对称性会提高SAF反转势垒同时降低自由层势垒;这种权衡在共线反平行SAF态中不存在。 stray fields也显著修改了SAF和自由层的能量势垒。为支持设计具有共线或非共线反平行SAF参考态的p-STT-MRAM设备,我们公开释放了涵盖4374种不同设备配置的模拟数据集。

英文摘要:

Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however, devices can exhibit magnetic states that are absent in extended thin films. We present a systematic micromagnetic study of 30 nm-diameter three-layer p-STT-MRAM nanopillars using experimentally motivated material parameters, and map equilibrium states as functions of bilinear and biquadratic interlayer exchange coupling. Phase diagrams show that introducing asymmetry between the SAF layers in saturation magnetization, anisotropy, and thickness reduces the coupling strength required to stabilize antiparallel SAF states and suppress competing configurations. Minimum-energy path calculations show that, for noncollinear antiparallel SAF states, increasing SAF asymmetry can raise SAF reversal barriers while lowering the free-layer barrier; this trade-off is absent for collinear antiparallel SAF states. Stray fields also significantly modify both SAF and free-layer energy barriers. To support the design of p-STT-MRAM devices with either collinear or noncollinear antiparallel SAF reference states, we publicly release the simulation dataset covering 4374 distinct device configurations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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