发表机构
Indian Institute of Technology Gandhinagar（印度理工学院甘地纳加尔分校）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文数值研究合成反铁磁自由层垂直磁性隧道结，利用顺序SOT和STT亚纳秒脉冲实现无外场快速磁化翻转，并分析热涨落下参数限制。
AI 中文摘要
具有垂直易轴的单自由层磁性隧道结（MTJ）在自旋电流驱动下，已展现出快速、确定性切换、非易失性以及与先进纳米电子器件集成时的低功耗存储能力。本文中，我们通过数值模拟研究了基于合成反铁磁体（SAF）自由层结构的垂直磁性隧道结（p-MTJ）在顺序施加亚纳秒自旋轨道力矩（SOT）和自旋转移力矩（STT）电流脉冲下的无外场切换特性。施加到一层的SOT脉冲通过将耦合层带入面内构型来缩短过渡时间，而随后施加到系统上的STT脉冲则决定切换方向。我们研究了多种针对SOT和STT电流幅度及脉冲宽度的脉冲协议，同时考虑了参考层（RL）的影响。在观察到大量确定性切换事件区域的同时，进一步研究了存在热涨落时SOT和STT参数的局限性。
英文摘要
Single free-layer Magnetic Tunnel Junctions (MTJs) with a perpendicular easy axis driven by spin currents have demonstrated fast, deterministic switching, non-volatility, and low-power memory capabilities when integrated with modern nanoelectronic devices. In this article, we numerically investigate sub-ns and field-free switching characteristics of a p-MTJ with a Synthetic Antiferromagnet (SAF) based free layer structure using sequential sub-ns current pulses of Spin Orbit Torque (SOT) and Spin Transfer Torque (STT). While the SOT pulse applied to one layer decreases the transition time by bringing the coupled layers into an in-plane configuration, the subsequent STT pulse on the system determines the switching direction. Various pulse protocols have been investigated for both SOT and STT current amplitude and pulse widths, while also considering the effect of the Reference Layer (RL). While significant regions of deterministic switching events are observed, limitations in SOT, STT parameters are further investigated in presence of thermal fluctuations.
Comments13 pages, 9 figures
