An Unsupervised Machine Learning-based Framework for Wafer Scale Variability Analysis and Performance Prediction of Ferroelectric Hf0.5Zr0.5O2 Thin Film Capacitors
Fabrication process-induced performance variability remains a formidable barrier in the high-volume manufacturing of semiconductor chips. With skyrocketing Artificial Intelligence (AI) workload, demand for non-volatile and computational memories is growing exponentially. As embedded non-volatile memory, ferroelectric Hf0.5Zr0.5O2 emerged as a strong candidate due to their CMOS back-end-of-line (BEOL) compatibility, scalability and high performance. However, their sensitive crystallization kinetics leads to significant device-to-device (D2D) non-uniformity leading to unpredictability of performance over wafer scale. In this work, we demonstrate unsupervised machine learning can analyze intra-die D2D variations and predict performance of "unseen" dies efficiently. We present a framework utilizing Principal Component Analysis (PCA) and K-Means clustering to analyze D2D performance variations in HZO capacitors and building on data from multiple dies, we move beyond traditional descriptive statistics to a predictive "Virtual Metrology" approach that separates performance categories, defined by key parameters like remanent polarization (Pr) and coercive voltage (Vc). The analysis further extends to comparing uniformity across different dies across the wafer showing the proposed methodology can accurately predict device performance on untested dies with a low Mean Absolute Percentage Error (MAPE) in the range of 5-10%, suggesting a robust path for accelerated yield improvement and reduced metrology overhead.
Negative Differential Resistivity and Positive Temperature Coefficient of Resistivity effect in the diffusion limited current of ferroelectric thin film capacitors
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $Hf_{0.5}Zr_{0.5}O_{2}$-based Capacitors Through Operando Nanobeam X-ray Diffraction
Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]
在最近的一封信中[N. A. Pertsev和H. Kohlstedt，Phys. Rev. Lett. 98，257603（2007）]作者声称“甚至纳米级电容器和隧道结也可以具有足以用于存储器应用的面外极化。“在这里，我们以一种基本的方式表明，这个结论并没有被他们的计算所证实，他们应该在他们的近似值中得出相反的结论。
Access Rate-Dependent Endurance Behavior of Ferroelectric Hafnium Zirconium Oxide Capacitors
NaMLab gGmbH（NaMLab有限公司）；Queen’s University Belfast（贝尔法斯特女王大学）；Technical University Dresden（德累斯顿工业大学）；Intel Foundry（英特尔代工）；University Applied Sciences, Department of Applied Sciences and Mechatronics（应用科学大学应用科学与机电工程系）
Wafer-Scale Integration of Piezo- and Ferroelectric Al0.64Sc0.36N Thin Films by Reactive Sputtering
Silicon Austria Labs GmbH（硅奥地利实验室有限公司）；Evatec AG（伊瓦泰克股份公司）；STMicroelectronics（意法半导体）；Tandem Laboratory, Uppsala University（乌普萨拉大学双联实验室）；USound GmbH（优声有限公司）
Alternative origins of polarity in compressively strained SrTiO3-RENiO3 capacitors
University College London（伦敦大学学院）；London Centre for Nanotechnology（伦敦纳米技术中心）；Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza（阿拉贡纳米科学与材料研究所（INMA），西班牙科学研究中心-萨拉戈萨大学）；Departamento de Física de la Materia Condensada, Universidad de Zaragoza（萨拉戈萨大学凝聚态物理系）；Condensed Matter Physics, Physics Department, Durham University（杜伦大学物理系凝聚态物理）；Smart Materials Unit, Luxembourg Institute of Science and Technology (LIST)（卢森堡科学与技术研究所（LIST）智能材料部门）；Department of Physics and Materials Science, University of Luxembourg（卢森堡大学物理与材料科学系）；Departamento de Ciencia y Tecnologia de Materiales y Fluidos, Universidad de Zaragoza（萨拉戈萨大学材料与流体科学技术系）
Enhanced negative capacitance in La-doped Pb(Zr$_{0.4}$Ti$_{0.6}$)O$_3$ ferroelectric capacitor from tuning of bias voltage pulse
CSIR-Central Glass and Ceramic Research Institute（印度中央玻璃和陶瓷研究所）；Jadavpur University（贾达普大学）；Indian Association for the Cultivation of Science（印度科学培育协会）；Indian Institute of Technology, Bhubaneswar（布巴内斯瓦尔印度理工学院）
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention
Intrinsic Dielectric Response in Ferroelectric Nanocrystals
对厚度低至75 nm的“自立式”单晶钛酸钡电容器的测量显示出典型的大单晶而不是传统薄膜的介电响应。介电峰或损耗角正切明显没有任何加宽或温度漂移。钙的峰值介电常数。25，000，Curie-Weiss分析表明一阶相变行为。这与常规沉积的薄膜异质结构上的结果形成令人惊讶的对比，常规沉积的异质结构显示出大的介电峰展宽和温度漂移[例如，C. B. Parker，J-P. Maria和A. I. Kingon，应用物理学快报，81，340（2002）]，以及顺电-铁电转变的性质从1阶到2阶的明显变化。我们的数据是兼容的最近的模型由Bratkovsky和Levanyuk，属性介电峰展宽的梯度条款，将存在于任何薄膜电容器异质结构，无论是通过在生长过程中引入的缺陷配置文件，或通过顶部和底部电极之间的微妙的不对称性。观察到的一阶转变行为的恢复与我们的实验中不存在显著的衬底夹持一致，如Pertsev等人在Phys. Rev. Lett.，80，1988（1998），并且说明了在常规沉积的薄膜中看到的二阶行为不能归因于系统中降低维度的效应，也不能归因于与电极-铁电界面相关的本征通用界面电容的影响。
Breakdown and polarization contrasts in ferroelectric devices observed by operando laser-based photoemission electron microscopy with the AC/DC electrical characterization system
