Insulating improper ferroelectric domain walls as robust barrier layer capacitors
Lukas Puntigam, Jan Schultheiß, Ana Strinic, Zewu Yan, Edith Bourret, Markus Altthaler, Istvan Kezsmarki, Donald M. Evans, Dennis Meier, Stephan Krohns
We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors.
We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization. Symmetry analysis indicates that two distortion modes at the X point combine to induce the polarization, leading to characterization as a hybrid improper ferroelectric. Our work demonstrates a mechanism for improper ferroelectricity in simple perovskites without the need for symmetry lowering by layering or cation ordering.
Integration of ferroelectric materials into novel technological applications requires low coercive field materials, and consequently, design strategies to reduce the ferroelectric switching barriers. In this first principles study, we show that biaxial strain, which has a strong effect on the ferroelectric ground states, can also be used to tune the switching barrier of hybrid improper ferroelectric Ruddlesden-Popper oxides. We identify the region of the strain -- tolerance factor phase diagram where this intrinsic barrier is suppressed, and show that it can be explained in relation to strain …
We study the ferroelectric stability and surface structural properties of an oxygen-terminated hexagonal YMnO$_3$ ultra-thin film using density functional theory. Under an open circuit boundary condition, the ferroelectric state with the spontaneous polarization normal to the (0001) surface, is found to be metastable in a single domain state despite the presence of a depolarizing field. We establish a connection between the result and the role of improper ferroelectric transition. Our results imply that improper ferroelectric ultrathin films can have rather unique properties that are distincti…
In this contribution to the special issue on magnetoelectrics and their applications, we focus on some single phase multiferroics theoretically predicted and/or experimentally discovered by the authors in recent years. In these materials, iron is the common core element. However, these materials are conceptually different from the mostly-studied BiFeO$_3$, since their ferroelectricity is improper. Our reviewed materials are not simply repeating one magnetoelectric mechanism, but cover multiple branches of improper ferroelectricity, including the magnetism-driven ferroelectrics, geometric ferro…
A newly developed fast molecular-dynamics method is applied to BaTiO3 ferroelectric thin-film capacitors with short-circuited electrodes or under applied voltage. The molecular-dynamics simulations based on a first-principles effective Hamiltonian clarify that dead layers (or passive layers) between ferroelectrics and electrodes markedly affect the properties of capacitors, and predict that the system is unable to hop between a uniformly polarized ferroelectric structure and a striped ferroelectric domain structure at low temperatures. Simulations of hysteresis loops of thin-film capacitors ar…
Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic or otherwise non-electric order, and the electric polarization, which is induced by the primary order parameter as a secondary, complementary effect. Using low-temperature scanning probe microscopy, we show that improper ferroelectric domains in YMnO$_3$ can be locally switched by electric field poling. However, subsequent temperature changes restore the as-grown domain structure as determined by the primary lattice distortion. The backswitching is explained by …
Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than…
Cornell University（康奈尔大学）；University of Nebraska, Lincoln（内布拉斯加大学林肯分校）；Leibniz-Institut für Kristallzüchtung（莱布尼茨晶体生长研究所）；Pacific Northwest National Laboratory（太平洋西北国家实验室）；The Pennsylvania State University（宾夕法尼亚州立大学）；University of California, Berkeley（加州大学伯克利分校）；Rice University（莱斯大学）；Kavli Institute at Cornell for Nanoscale Science（康奈尔卡弗里纳米科学研究所）；Princeton University（普林斯顿大学）
We investigate the fatigue and refreshment by dc-electrical field of the electrical properties of Pt/Pb(Ti,Zr)O$_3$/Pt ferroelectric capacitors. We find an asymmetry in the refreshment, that is, the fatigued state can be refreshed by application of negative high dc-voltage to the top electrode, but no refreshment is measured by positive dc-voltage application. We also find that the fatigue can be prevented by driving the capacitor asymmetrically.
Li et al. (Science Advances, 29 January, p. eabe3068) claim the discovery of two improper ferroelectrics, dabcoHClO4 and dabcoHBF4 (dabco = 1,4-diazabicyclo[2.2.2]octane), and that these materials exhibit superior pyroelectric figures of merit. This information is misleading due to the fundamental methodological errors and false conclusions, not to mention that these ferroelectrics were reported over 20 years ago. They are proper ferroelectrics, for which the spontaneous polarization is the macroscopic order parameter. We show that the useful pyroelectric coefficients of these materials are ab…
Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capa…
The successful theoretical prediction and experimental demonstration of hybrid improper ferroelectricity (HIF) provides a new pathway to couple octahedral rotations, ferroelectricity, and magnetism in complex materials. To enable technological applications, a HIF with a small coercive field is desirable. We successfully grow Sr3Sn2O7 single crystals, and discover that they exhibit the smallest electric coercive field at room temperature among all known HIFs. Furthermore, we demonstate that a small external stress can repeatedly erase and re-generate ferroelastic domains. In addition, using in-…
Gadolinium molybdate is a classical example of an improper ferroelectric and ferroelastic material. It is established that the spontaneous polarization arises as a secondary effect, induced by a structural instability in the paraelectric phase, which leads to a unit cell doubling and the formation of a polar axis. However, previous X-ray diffraction studies on gadolinium molybdate have been restricted by the limited ability to include the entire 2θ range in the analysis, and thus, at atomic scale, much remains to be explored. By applying temperature dependent X-ray diffraction, we observe the …
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large two-dimensional conduction. Charged ferroelectric walls, which are energetically unfavorable in general, were found to be mysteriously abundant in hybrid improper ferroelectric (Ca,Sr)3Ti2O7 crystals. From the exploration of antiphase boundaries in bilayer-perovskites, we discover that each of four polarization-direction states is degenerated with two antiphase domains, a…
We report on multiple fundamental qualitative improvements in the growth of improper ferroelectric hexagonal YMnO$_3$ (YMO) thin films and heterostructures by pulsed laser deposition (PLD). By a combination of pre-growth substrate annealing and low-energy-fluence PLD, we obtain a two-dimensional growth mode of the YMO films on yttria-stabilized zirconia (YSZ) with ultralow roughness and devoid of misoriented nanocrystalline inclusions. By inserting a sacrificial manganite layer capped with conducting indium-tin oxide between the substrate and the final film, the latter is grown in a fully latt…
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a Positive Temperature Coefficient of Resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be …
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures involving strained epitaxial films and metal electrodes, the homogeneous polarization state may remain stable against transformations into the paraelectric phase and into polydomain states down to the nanoscale. This result supports the possibility of depolarizing-field-related resistive switching in ferroelectric tunnel junctions with dissimilar electrodes. The …
Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO$_3$, InMnO$_3$ and YGaO$_3$ by first principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width…
Hybrid improper ferroelectrics (HIFs) have been intensely studied over the last few years to gain understanding of their temperature induced phase transitions and ferroelectric switching pathways. Here we report a switching from first- to second-order phase transition pathway for topical HIFs $Ca_{3-x}Sr_xTi_2O_7$, which is driven by the differing entropies of the phases that we identify as being associated with the dynamic motion of octahedral tilts and rotations. A greater understanding of the transition pathways in this class of layered perovskites, which host many physical properties that …
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO$_3$ films sandwiched between the most habitual perovskite electrodes, SrRuO$_3$, on top of the most used perovskite substrate, SrTiO$_3$. We…
The presence of a switchable spontaneous electric polarization makes ferroelectrics ideal candidates for the use in many applications such as memory and sensors devices. Since known ferroelectrics are rather limited, finding new ferroelectric (FE) materials has become a flourishing field. One promising route is to design the so-called hybrid improper ferroelectricity. However, the previous approach based on the Landau theory is not easily adopted to the systems that are unrelated to the Pbnm perovskite structure. To this end, we develop a general design rule that is applicable to any systems. …
We study the interplay of structural and polar distortions in hexagonal YMnO3 and short-period PbTiO3/SrTiO3 superlattices by means of first-principles calculations at constrained electric displacement field D. We find that in YMnO3 the tilts of the oxygen polyhedra produce a robustly polar ground state, which persists at any choice of the electrical boundary conditions. Conversely, in PTO/STO the antiferrodistortive instabilities alone do not break inversion symmetry, and open-circuit bundary conditions restore a non-polar state. We suggest that this qualitative difference naturally provides …
The improper ferroelectricity in YMnO$_3$ and other related multiferroic hexagonal manganites are known to cause topologically protected ferroelectric domains that give rise to rich and diverse physical phenomena. The local structure and structural coherence across the ferroelectric transition, however, were previously not well understood. Here we reveal the evolution of the local structure with temperature in YMnO$_3$ using neutron total scattering techniques, and interpret them with the help of first-principles calculations. The results show that, at room temperature, the local and average s…
Charged domain walls and boundaries in ferroelectric materials display distinct phenomena, such as an increased conductivity due to the accumulation of bound charges. Here, we report the electron microscopy observations of atomic-scale arrangements at charged domain boundaries in the hybrid improper ferroelectric Ca$_{2.46}$Sr$_{0.54}$Ti$_2$O$_7$. Like in the prototype improper ferroelectric YMnO$_3$, we find that charged domain boundaries in Ca$_{2.46}$Sr$_{0.54}$Ti$_2$O$_7$ correspond to out-of-phase boundaries, which separate adjacent domains with a fractional translational shift of the uni…
In hybrid improper ferroelectric systems, polarization arises from the onset of successive nonpolar lattice modes. In this work, measurements and modeling were performed to determine the spatial symmetries of the phases involved in the transitions to these modes. Structural and optical measurements reveal that the tilt and rotation distortions of the MnO6 or TiO6 polyhedra relative to the high symmetry phases driving ferroelectricity in the hybrid improper Ca3X2O7 system (X=Mn and Ti) condense at different temperatures. The tilt angle vanishes abruptly at T$_T$ ~ 400 K for Ca3Mn2O7 (and contin…
First-principles modeling of ferroelectric capacitors presents several technical challenges, due to the coexistence of metallic electrodes, long-range electrostatic forces and short-range interface chemistry. Here we show how these aspects can be efficiently and accurately rationalized by using a finite-field density-functional theory formalism in which the fundamental electrical variable is the displacement field D. By performing calculations on model Pt/BaTiO3/Pt and Au/BaZrO3/Au capacitors we demonstrate how the interface-specific and bulk-specific properties can be identified and rigorousl…
Standing on successful first principles predictions for new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Utilizing trilinear coupling of two types of octahedron rotations, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca$_{3}$Ti$_{2}$O$_{7}$, Ca$_{3}$Mn$_{2}$O$_{7}$, and (Ca/Sr/Ba)$_{3}$(Sn/Zr/Ge)$_{2}$O$_{7}$). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we…
In this study, we propose a measurement technique for evaluating ferroelectric polarization characteristics in ferroelectric field-effect transistors (FeFETs). Different from standard metal/ferroelectric/metal capacitors, the depletion and inversion phenomena in semiconductor substrates have to be carefully taken into account when evaluating the ferroelectric properties using fast voltage sweep as input. The non-equilibrium deep depletion is found to be the limiting factor for the accurate evaluation of ferroelectric properties in metal/ferroelectric/semiconductor capacitors. By connecting the…
Ca$_3$Ti$_2$O$_7$ is an experimentally confirmed hybrid improper ferroelectric material, in which the electric polarization is induced by a combination of the coherent TiO$_6$ octahedral rotation and tilting. In this work, we investigate the tuning of ferroelectricity of Ca$_3$Ti$_2$O$_7$ using iso-valent substitutions on Ca-sites. Due to the size mismatch, larger/smaller alkaline earths prefer $A$'/$A$ sites respectively, allowing the possibility for site-selective substitutions. Without extra carriers, such site-selected iso-valent substitutions can significantly tune the TiO$_6$ octahedral …
Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for ultra-low power memory and logic devices as well as novel computing architectures. In this work, we employ synchrotron-based near-field infrared nano-spectroscopy to reveal the vibrational properties of ferroelastic (90$^\circ$ ferroelectric) domain walls in the hybrid improper ferroelectric Ca$_3$Ti$_2$O$_7$. By locally mapping the Ti-O stretching and Ti-O-Ti …
The temperature-dependent phase transitions in Ruddlesden-Popper oxides with perovskite bilayers have been under increased scrutiny in recent years due to the so-called hybrid improper ferroelectricity that some chemical compositions exhibit. However, little is currently understood about the hydrostatic pressure dependence of these phase transitions. Herein we present the results of a high-pressure powder synchrotron X-ray diffraction experiment and $ab~initio$ calculations on the bilayered Ruddlesden-Popper phases Ca$_{3}$Mn$_{2}$O$_{7}$ and Ca$_{3}$Ti$_{2}$O$_{7}$. In both compounds we obser…
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The re…
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally …
Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are introducing new directions in the 2D materials landscape. The coexistence of ferroelectricity and spin-orbit interactions play a key role in their optoelectronic properties. We perform a detailed study on a recently synthesized ferroelectric 2D-HOIP, (AMP)PbI$_4$ (AMP = 4-aminomethyl-piperidinium). The calculated polarization and Rashba parameter are in excellent agreement with experimental values. We report a striking new effect, i.e., an extraordinarily large Rashba anisotropy that is tunable by ferroelectric polarization:…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper magnetic ferroelectrics to date. We find that the two proposed mechanisms for FE in multiferroics, lattice- and electronic-based, are simultaneously active in this compound: a large portion of the ferroelectric polarization arises due to quantum-mechanical effects of electron orbital polarization, in addition to the conventional polar atomic displacements. An i…
We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization switching in circular capacitors. This dynamical behavior is modeled using the Landau-Liftshitz-Gilbert equations and found to be in detailed agreement with experiment. This simulation implies rotational m…
Results of the experimental study of the electromagnetic pumping of frequency 0.3 THz upon the soft mode phonons in the (Ba, Sr)TiO3 film are presented. Some features of the phonon state are revealed using the capacitor thermometer and the thermocouple. The soft mode phonon overheating estimated comparing changes of the planar capacitor capacitance was observed to be quite significant
We demonstrate that electromagnons can be used to directly probe the nature of a phase transition between magnetically ordered phases in an improper ferroelectric. The antiferromagnetic/paraelectric to antiferromagnetic/ferroelectric phase transition in Cu$_{1-x}$Zn$_{x}$O ($x=0, 0.05$) alloys was tracked via the electromagnon response using terahertz time-domain spectroscopy, on heating and cooling through the phase transition. The transition was found to exhibit thermal hysteresis, confirming its first-order nature, and to broaden under the influence of spin-disorder upon Zn substitution. Th…
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric $Hf_{0.5}Zr_{0.5}O_{2}$-based Capacitors Through Operando Nanobeam X-ray Diffraction
Half of the energy is always lost when charging a capacitor. Even in the limit of vanishing resistance, half of the charging energy is still lost--to radiation instead of heat. While this fraction can technically be reduced by charging adiabatically, it otherwise places a fundamental limit on the charging efficiency of a capacitor. Here we show that this 1/2 limit can be broken by coupling a ferroelectric to the capacitor dielectric. Maxwell's equations are solved for the coupled system to analyze energy flow from the perspective of Poynting's theorem and show that (1) total energy dissipation…
Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin walls - surface junctions due to the rotostriction coupling, decrease the local band gap via the deformation potential and flexoelectric coupling mec…
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically…
We propose the Landau model for lock-in phase transitions in uniaxially modulated improper ferroelectric incommensurate-commensurate systems of class I. It includes Umklapp terms of third and fourth order and secondary order parameter representing the local polarization. The corresponding phase diagram has the structure of harmless staircase, with the allowed wave numbers obeying the Farey tree algorithm. Among the stable commensurate phases only those with periods equal to odd number of lattice constants have finite macroscopic polarizations. These results are in excellent agreement with expe…
Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 μC/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase d…
Recent interests towards novel functionalities arising at domain walls of ferroic materials naturally call for a microscopic understanding. To this end, first-principles calculations have been performed in order to provide solid evidence of ferroelectricity in the twin walls of nonpolar CaTiO3 and magnetic CaMnO3. We show that ferroelectricity arises from rotation/tilting octahedral distortions --- cooperatively acting at the twin wall in both considered systems --- rather than from a proper secondary ferroelectric instability, as often believed. Our results are in excellent agreement with exp…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time-in exactly the oppos…
It is of great interest to design and make materials in which ferroelectric polarisation is coupled to other order parameters such as lattice, magnetic and electronic instabilities. Such materials will be invaluable in next-generation data storage devices. Recently, remarkable progress has been made in understanding improper ferroelectric coupling mechanisms that arise from lattice and magnetic instabilities. However, although theoretically predicted, a compact lattice coupling between electronic and ferroelectric (polar) instabilities has yet to be realised. Here we report detailed crystallog…
