评论“纳米电容器和隧道结中单畴铁电态的弹性稳定”[N.A. Pertsev和H. Kohlstedt，Phys. Rev. Lett. 98，257603（2007）.]
Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]
摘要：
在最近的一封信中[N. A. Pertsev和H. Kohlstedt，Phys. Rev. Lett. 98，257603（2007）]作者声称“甚至纳米级电容器和隧道结也可以具有足以用于存储器应用的面外极化。“在这里，我们以一种基本的方式表明，这个结论并没有被他们的计算所证实，他们应该在他们的近似值中得出相反的结论。
英文摘要：
In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we show in an elementary way that this conclusion is not substantiated by their calculations and that they should have come to the opposite conclusion within their approximations.
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