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arXiv 0811.0632cond-mat.mtrl-sci
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金属/氧化物界面铁电性的增强

Enhancement of ferroelectricity at metal/oxide interfaces

Massimiliano Stengel, David Vanderbilt, Nicola A. Spaldin

摘要:

通过对四种基于BaTiO 3和PbTiO 3的电容器结构进行第一性原理计算,我们确定了薄膜铁电器件中极性态不稳定的本征界面效应。我们发现,相反,建立的解释,界面电容取决于关键的局部化学环境的界面,通过力常数的金属氧化物键,并不一定与电极材料的体屏蔽性能。特别是,在AO-终止钙钛矿和简单的金属之间的界面的情况下,我们证明了一种新的机制“界面铁电性”,产生的铁电不稳定性的膜的整体增强,而不是抑制通常假设。由此产生的“负死层”建议的路线,薄膜铁电器件是免费的有害的尺寸效应。

英文摘要:

By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-terminated perovskites and simple metals, we demonstrate a novel mechanism of "interfacial ferroelectricity" that produces an overall enhancement of the ferroelectric instability of the film, rather than a suppression as is usually assumed. The resulting "negative dead layer" suggests a route to thin-film ferroelectric devices that are free of deleterious size effects.

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