Impact of strain on electron-phonon coupling of quantum emitters
University of Oslo（奥斯陆大学）；Center for Physical Sciences and Technology (FTMC)（立陶宛物理与工程技术中心）；Max-Planck Institut für Polymerforschung（马克斯·普朗克聚合物研究所）；ETH Zürich（苏黎世联邦理工学院）
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas, Ali Tayefeh Younesi, Minh Tuan Luu, Ronald Ulbricht, Ulrike Grossner, Lasse Vines, Marianne Etzelmüller Bathen
备注：
15 pages, 9 figures; v2: updated title, updated results with 5x5x2 supercell size for strain-free case to keep consistency, updated bulk phonon DOS with c-axis strain and more strain values, added temperature broadened emission lineshapes
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to physical variations such as pressure and strain, or conversely -- as we demonstrate the possibility of herein -- pressure and strain can be utilized to manipulate quantum emitter properties. To investigate how strain can alter the fundamental electron-phonon interaction of quantum defects, we employ the negatively charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC as a use-case and study its vibrational structure under applied tensile and compressive uniaxial strain using first-principles calculations. We show that the strain variations of the emission spectrum can be explained by differing responses of bulk-like and quasi-localized vibrational modes. Importantly, the $\mathrm{V_{Si}^{-}}$ defect exhibits a strain-induced enhancement of the Debye-Waller factor under uniaxial tensile strain applied along the $a$-axis of 4H-SiC, thereby improving its performance as a quantum emitter. The strain-dependent changes in the phonon sideband enable distinguishing between compressive and tensile strain, opening up the possibility of magnetic-field-free strain detection using only spin-conserving transitions of solid-state quantum emitters.
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-i…
Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping
The generation of single-photon emitters in hexagonal boron nitride around 2 eV emission is experimentally well-recognized; however the atomic nature of these emitters is unknown. In this paper, we use first-principles calculations to demonstrate that $C_2C_N$ is a possible source of 2 eV single-photon emitter. We showcase the calculations of a complete set of static and dynamical properties related to defects, including exciton-defect couplings and electron-phonon interactions. In particular, we show it is critical to consider nonradiative processes when comparing with experimental lifetime f…
Multimode magnon-phonon cavity driven by symmetry-locked strain fields
Auburn University（奥本大学）；University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；University of California, Davis（加州大学戴维斯分校）；University of North Carolina at Chapel Hill（北卡罗来纳大学教堂山分校）；Columbia University（哥伦比亚大学）；Pacific Northwest National Laboratory（太平洋西北国家实验室）
Flexo-Strain Engineering of Phonons and Ferrons in Thin Films of Van der Waals Ferrielectrics
Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉采维奇材料科学问题研究所）；Department of Materials Science and Engineering, University of Wisconsin-Madison（威斯康星大学麦迪逊分校材料科学与工程系）；V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院V.拉什卡廖夫半导体物理研究所）；Department of Microelectronics, Igor Sikorsky Kyiv Polytechnic Institute（伊戈尔·西科尔斯基基辅理工学院微电子系）；Institute of Solid-State Physics and Chemistry, Uzhhorod University（乌日霍罗德大学固体物理与化学研究所）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitte…
First principles investigation of ferroelectricity in epitaxially strained Pb$_2$TiO$_4$
本文用密度泛函理论研究了假设的Ruddlesden-Popper化合物Pb $_2$ TiO $_4$的结构和极化。计算了空间群为$I4/mmm$的高对称性K-$_2$-NiF-$_4$-型参考结构的带内声子.在理论基态晶格常数下，存在一个不稳定的红外激活声子。该声子冻结以产生$I2mm$铁电态。作为外延应变的函数，两个额外的铁电相被发现，与空间群$I4mm$和$F2mm$在压缩和拉伸应变，分别。
Understanding the coupling between spin and phonons is critical for controlling the lattice thermal conductivity ($κ_l$) in magnetic materials, as we demonstrate here for CrX$_3$ (X = Br and I) monolayers. We show that these compounds exhibit large spin-phonon coupling (SPC), dominated by out-of-plane vibrations of Cr atoms, resulting in significantly different phonon dispersions in ferromagnetic (FM) and paramagnetic (PM) phases. Lattice thermal conductivity calculations provide additional evidence for strong SPC, where particularly large $κ_l$ is found for the FM phase. Most strikingly, PM a…
Structural strain severely impacts material properties such as the linear and non-linear optical response. Moreover, strain plays a key role, e.g., in the physics of ferroelectrics and in particular of their domain walls. $μ$-Raman spectroscopy is a well-suited technique for the investigation of such strain effects, as it allows to measure the lattice dynamics locally. However, quantifying and reconstructing strain fields from Raman maps requires knowledge on the strain dependence of phonon frequencies. In this work, we have analyzed both theoretically and experimentally the phonon frequencies…
Transverse acoustic waves in an inhomogeneous medium are analogues to electromagnetic waves and will exhibit topological behavior due to the Berry gauge potential in the momentum space due to inhomogeneity. The inhomogeneous (or gradient) medium can be created using an applied strain gradient in a semiconductor thin film (silicon) since the phonon frequency and dispersion will be a function of the local strain along the strain gradient direction. As a consequence, topological phonon mediated spin and heat transport can be engineered in the semiconductor thin films. Here, we present evidence of…
Spin-based terahertz (THz) emitters, utilizing the inverse spin Hall effect, are ultra-modern sources for the generation of THz electromagnetic radiation. To make a powerful emitter having large THz amplitude and bandwidth, fundamental understanding in terms of microscopic models is essential. This study reveals important factors to engineer the THz emission amplitude and bandwidth in epitaxial Pt/Fe emitters grown on MgO and MgAl$_2$O$_4$ (MAO) substrates, where the choice of the substrate plays an important role. The THz amplitude and bandwidth are affected by the induced strain in the Fe sp…
Thermal and electrical conductivity of a refractory high-entropy alloy after high-pressure torsion: Electron versus phonon contributions
WPI, International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University（九州大学碳中和社会能源研究国际中心）；School of Mechanical Engineering, FEM, University of Campinas, UNICAMP（坎皮纳斯大学机械工程学院）；School of Applied Sciences, University of Campinas, FCA-UNICAMP（坎皮纳斯大学应用科学学院）；Department of Materials, Faculty of Engineering, Kyushu University（九州大学工学分部材料系）
The effect of biaxial strain on the superconducting properties of MgB2 thin films was studied by first-principles calculations. The stability analyses by phonon dispersions show that biaxial strain as much as 7% can be applied onto MgB2 without inducing any imaginary frequency. The superconducting property calculations based on the frame of Migdal-Eliashberg theory successfully reproduce the two-gap superconductivity of MgB2. The results show that the tensile biaxial strain can increase the critical temperature of MgB2 while the compressive biaxial strain would decrease the critical temperatur…
Critical behavior of the damping rate of GHz acoustic phonons in SrTiO3 at the antiferrodistortive phase transition measured by time- and frequency-resolved Brillouin scattering
Despite important breakthroughs in the last decade, the calculation of temperature dependent properties of solids still remains a challenging task, especially in the vicinity of structural phase transitions. We show that the combination of machine-learning interatomic potentials with quantum self-consistent ab initio lattice dynamics allows to calculate efficiently the temperature dependence of dielectric properties of the quantum paraelectric perovskite KTaO$_3$, with a precision beyond what could be reasonably achieved using plain density functional theory. We first follow the strong anharmo…
