衍射极限下层状GaSe中应变局域单光子发射器的成像
Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit
AI总结：
本研究结合多种显微技术与密度泛函理论模拟，突破衍射极限研究层状GaSe中应变局域单光子发射器的特性，揭示其宽波长可调性、亮度增强效应及优异稳定性，为确定性量子光子学发展提供指导。
摘要：
激子漏斗的纳米尺度应变调控是二维材料中可扩展制备单光子发射器（SPEs）的一项日益关键的技术。然而，传统远场光学显微镜的空间分辨率仍受衍射极限限制，因此仅能对SPEs的纳米尺度应变局域化提供有限的描述。本研究结合阴极发光、光致发光和原子力显微镜技术，并辅以密度泛函理论模拟，量化了纳米尺度非均匀应变对纳米柱上GaSe SPEs的能量和亮度的影响。我们发现，应变局域的SPEs具有620 nm至900 nm的宽发射波长范围。研究揭示，由于I型激子漏斗效应，应变调控的SPEs在约100 nm的光谱范围内具有显著的波长可调性，且柱中心处的SPE亮度提升了两个数量级。此外，我们发现辐射双激子级联过程是观测到的阴极发光（CL）光子超聚束的成因。同时，电子束辐照后测得的GaSe SPEs光物理特性表明这些SPEs具有优异的稳定性。我们预期，这种对二维SPEs纳米尺度应变调控的见解将指导真正确定性量子光子学的发展。
英文摘要：
Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics.
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