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arXiv 2602.08950cond-mat.mtrl-scicond-mat.mes-hall
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在拓扑绝缘体界面处定制超薄磁多层结构用于垂直磁化域

Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains

University of Leeds(利兹大学);ISIS Neutron and Muon Source, STFC Rutherford Appleton Laboratory(STFC卢瑟福阿普尔顿实验室中子与μ子源);Diamond Light Source(钻石光源);Imperial College London(伦敦帝国理工学院)
Benjamin A. Brereton, Soumyarup Hait, Ahmet Yagmur, Christy J. Kinane, Francesco Maccherozzi, Michele Conroy, Satoshi Sasaki, Thomas A. Moore, Sarnjeet S. Dhesi… 展开作者

Benjamin A. Brereton, Soumyarup Hait, Ahmet Yagmur, Christy J. Kinane, Francesco Maccherozzi, Michele Conroy, Satoshi Sasaki, Thomas A. Moore, Sarnjeet S. Dhesi, Sean Langridge, Christopher H. Marrows

AI总结:

本文通过优化Bi$_2$Se$_3$/缓冲层/[Pt/CoB/Ru]$_{\times N}$异质结构,实现垂直磁各向异性的均匀性,利用X射线和极化中子反射测量及扫描透射电镜进行表征,发现缓冲层需超过临界厚度以获得稳定的垂直磁化域。

摘要:

拓扑绝缘体和具有skyrmion宿主、手性磁多层结构是现代凝聚态物理中两个备受关注的领域,各自为自旋电子学应用提供了独特优势。本文展示了Bi$_2$Se$_3$/缓冲层/[Pt/CoB/Ru]$_{\times N}$异质结构的生长优化过程,Bi$_2$Se$_3$膜通过分子束外延生长后转移至另一生长室,多层结构通过溅射沉积制备。样品结构通过共拟合X射线和极化中子反射测量及扫描透射电镜进行表征。极化中子模型和标准磁性测量表明,缓冲层需超过临界厚度才能获得每层磁性材料中所需的均匀垂直磁各向异性。使用Ta和Mo缓冲层的样品分别需要1.5和0.9 nm厚度。在最小化Bi$_2$Se$_3$台阶的同时,缓冲样品产生清晰的垂直磁域,适用于由X射线光电子能谱确定的自旋轨道扭力诱导操控。

英文摘要:

Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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