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arXiv 2406.08021cond-mat.mtrl-sci
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反铁磁Cr$_{0.86}$ZnSb中空位诱导的赝能隙形成

Vacancy-induced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$ZnSb

Michael Parzer, Fabian Garmroudi, Herwig Michor, Xinlin Yan, Ernst Bauer, Gerda Rogl, Jiri Bursik, Stephen Cottrell, Raimund Podloucky, Peter Rogl

AI总结:

本研究通过DFT计算与实验结合,发现反铁磁Cr$_{0.86}$ZnSb中特定空位排列会诱导电子结构赝能隙形成,导致220K磁相变及190K热电传输异常。

摘要:

结构缺陷对固体化学和物理学都很重要,因为它们能对化学稳定性和物理性质产生重大影响。在这里,我们在反铁磁Cr$_{0.86}$ZnSb中发现了空位诱导的赝能隙形成。结合密度泛函理论(DFT)计算和实验方法,研究了Cr$_{1-x}$ZnSb合金以阐明空位效应。对Cr$_{1-x}$ZnSb($0<x<0.20$)的详细分析(X射线粉末和单晶衍射、透射和二次扫描电子显微镜)表明,Cr$_{0.86}$ZnSb是唯一稳定的化合物,以MnAlGe型结构结晶。DFT计算发现,对于完美化学计量比化合物CrZnSb以及Cr$_{0.875}$ZnSb,Cr局域磁矩的反铁磁自旋构型都是有利的。通过温度和磁场依赖的磁化测量,在Cr$_{0.86}$ZnSb中实验观察到了磁有序,揭示了在220 K附近发生磁相变,这得到了零场μ子自旋弛豫研究的证实。热电传输性质在约190 K的温度依赖塞贝克系数和电阻率中表现出明显的极大值。基于三抛物线能带模型和DFT模拟分析测量数据,其特征被追溯到由特定空位排列引起的电子结构中的赝能隙。这些发现为空位在缺陷材料中的作用提供了有价值的见解,有助于更广泛地理解结构缺陷及其对电子结构的影响。

英文摘要:

Structural defects are important for both solid-state chemistry and physics, as they can have a significant impact on chemical stability and physical properties. Here, we identify a vacancyinduced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$ZnSb. Cr$_{1-x}$ZnSb alloys were studied combining efforts of density functional theory (DFT) calculations and experimental methods to elucidate the effect of vacancies. Detailed analyses (X-ray powder and single crystal diffraction, transmission and secondary scanning electron microscopy) of Cr$_{1-x}$ZnSb, $0<x<0.20$, prompts Cr$_{0.86}$ZnSb as the only stable compound, crystallizing with the MnAlGe-type structure. From DFT calculations, an antiferromagnetic spin configuration of Cr local magnetic moments was found to be favorable for both, the perfectly stoichiometric compound CrZnSb, as well as for Cr$_{0.875}$ZnSb. Magnetic order is observed experimentally for Cr$_{0.86}$ZnSb by temperature- and field-dependent magnetization measurements, revealing a magnetic phase transition near 220 K, which is corroborated by zero-field muon spin relaxation studies. Thermoelectric transport properties exhibit distinct maxima in the temperature-dependent Seebeck coefficient and electrical resistivity at around 190 K. Analyzing the measured data on the basis of a triple parabolic band model and DFT simulations, their characteristic features are traced back to a pseudo-gap in the electronic structure arising from a particular vacancy arrangement. These findings offer valuable insights into the role of vacancies in defected materials, contributing to the broader understanding of structural defects and their impact on the electronic structure.

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