MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator which stimulates intense interests due to the exotic quantum phenomena and promising device applications. Surface structure is a determinant factor to understand the novel magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here, we discovered a spontaneous surface collapse and reconstruction in few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as Mn-doped Bi$_2$Te$_3$ quintuple-layer and Mn$_x$Bi$_y$Te double-layer with a clear van der Waals gap in between. Combining with first-principles calculations, such spontaneous surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and tellurium vacancy in the exfoliated surface, which is further supported by in-situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi$_2$Te$_4$, and provide insightful perspective of the surface-related quantum measurements in MnBi$_2$Te$_4$ few-layer devices.
The layered topological insulator MnBi$_2$Te$_4$ has attracted great interest recently due to its intrinsic antiferromagnetic order, potentially hosting various topological phases. By temperature-dependent infrared spectroscopy over a broad frequency range, we studied the changes in the optical conductivity of MnBi$_2$Te$_4$ at the magnetic ordering temperature. The temperature dependence of several optical parameters reveals an anomaly at the magnetic phase transition, which suggests the correlation between the bulk electronic band structure and the magnetism. We relate our findings to recent…
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4…
Natural superlattice structures $\rm{(MnBi_2Te_4)(Bi_2Te_3)}$$_n$ ($n$ = 1, 2,...), in which magnetic $\rm{MnBi_2Te_4}$ layers are separated by nonmagnetic $\rm{Bi_2Te_3}$ layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic (FM)-antiferromagnetic (AFM) coexisting ground states that persist up to the 2-septuple layers (SLs) limi…
Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this re…
Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at non-magnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN, the edge state vanishes, wh…
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent)…
Crystal growth of MnBi$_{2}$Te$_{4}$ has delivered the first experimental corroboration of the 3D antiferromagnetic topological insulator state. Our present results confirm that the synthesis of MnBi$_{2}$Te$_{4}$ can be scaled-up and strengthen it as a promising experimental platform for studies of a crossover between magnetic ordering and non-trivial topology. High-quality single crystals of MnBi$_{2}$Te$_{4}$ are grown by slow cooling within a narrow range between the melting points of Bi$_{2}$Te$_{3}$ (586 °C) and MnBi$_{2}$Te$_{4}$ (600 °C). Single crystal X-ray diffraction and electron m…
Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi$_2$Te$_4$, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi$_2$Te$_4$ via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well rep…
Magnetic topological insulators (MTIs) have received a lot of attention due to the existence of various quantum phenomena such as quantum anomalous Hall effect (QAHE) and topological magnetoelectric effect, etc. The intrinsic superlattice-like layered MTIs, MnBi2Te4/(Bi2Te3)n, have been extensively investigated mainly through the transport measurements, while the direct investigation of their superlattice-sensitive magnetic behaviors is relatively rare. Here, we report a microscopic real-space investigation of magnetic phase behaviors in MnBi4Te7 using cryogenic magnetic force microscopy (MFM)…
MnBi$_4$Te$_{7}$ and MnBi$_6$Te$_{10}$ are two members with n=2 and 3 in the family of MnBi$_{2n}$Te$_{3n+1}$ where the n=1 member, MnBi$_2$Te$_{4}$, has been intensively investigated as the first intrinsic antiferromagnetic topological insulator. Here we report the A-type antiferromagnetic order in these two compounds by measuring magnetic properties, electrical and thermal transport, specific heat, and single crystal neutron diffraction. Both compounds order into an A-type antiferromagnetic structure as does MnBi$_2$Te$_{4}$ with ferromagnetic planes coupled antiferromagnetically along the c…
Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MB…
Intrinsic magnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ is believed to be an axion insulator in its antiferromagnetic ground state. However, direct identification of axion insulators remains experimentally elusive because the observed vanishing Hall resistance, while indicating the onset of the axion field, is inadequate to distinguish the system from a trivial normal insulator. Using numerical Green's functions, we theoretically demonstrate the quantized magnetoelectric current in a tunnel junction of atomically thin ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ sandwiched be…
The discovery of an intrinsic antiferromagnetic topological insulator (AFM-TI) in MnBi$_2$Te$_4$ has attracted intense attention, most of which lies on its electrical properties. In this paper, we report electronic, thermal, and thermoelectric transport studies of this newly found AFM-TI. The temperature and magnetic field dependence of its resistivity, thermal conductivity, and Seebeck coefficient indicate strong coupling between charge, lattice, and spin degrees of freedom in this system. Furthermore, MnBi$_2$Te$_4$ exhibits a large anomalous Nernst signal, which is associated with non-zero …
Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te-Bi-Te-Mn-Te-Bi-Te sequences as determined by powder X-ray diffraction (PXRD) and high-resolution high-angle annular dark field scanning transmission electron micros…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We performed comprehensive studies on the structure, nontrivial surface state and magnetotransport properties of this material. Our results reveal an intrinsic anomalous Hall effect arising from a non-collinear spin structure for the magnetic field parallel to the $c$-axis. We also observed remarkable negative magnetoresistance under arbitrary field orientation below …
Here we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi$_2$Te$_4$ single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding th…
A striking feature of time reversal symmetry (TRS) protected topological insulators (TIs) is that they are characterized by a half integer quantum Hall effect on the boundary when the surface states are gapped by time reversal breaking perturbations. While time reversal symmetry (TRS) protected TIs have become increasingly under control, magnetic analogs are still largely unexplored territories with novel rich structures. In particular, topological magnetic insulators can also host a quantized axion term in the presence of lattice symmetries. Since these symmetries are naturally broken on the …
Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progre…
The recent discovery of antiferromagnetic (AFM) topological insulator (TI) MnBi$_2$Te$_4$ has triggered great research efforts on exploring novel magnetic topological physics. Based on first-principles calculations, we find that the manipulation of magnetic orientation and order not only significantly affects material symmetries and orbital hybridizations, but also results in variant new magnetic topological phases in MnBi$_2$Te$_4$. We thus predict a series of unusual topological quantum phase transitions that are magnetically controllable in the material, including phase transitions from AFM…
The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapless Dirac cone at the (0001) surface of MnBi$_2$Te$_4$ exists between the bulk band gap. Such unexpected surface state remains unchanged across the bulk Néel temperature, and is even robust against se…
The magnetic topological insulator, MnBi$_2$Te$_4$, shows metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission spectroscopy, while it can become a Chern insulator at field larger than 6 T (ferromagnetic phase, FM). Thus, the zero-field surface magnetism was once speculated to be different from the bulk AFM phase. However, recent magnetic force microscopy refutes this assumption by detecting persistent AFM order on the surface. In this work, we propose a mechanism rel…
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a…
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range ma…
Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically investigate both the structural and electronic responses of MnBi2Te4 and MnBi4Te7 to external pressure. In addition to the suppression of antiferromagnetic order, MnBi2Te4 is found to undergo a metal-semiconductor-metal transition upon compression. The resistivity of MnBi4Te7 changes dramatically under high pressure and a non-monotonic evolution of \r{h…
We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrinsic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain …
Using single crystal neutron diffraction, we present a systematic investigation of the crystal structure and magnetism of van der Waals topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$, where rich topological quantum states have been recently predicted and observed. Structural refinements reveal that considerable Bi atoms occupied on the Mn sites in both materials, distinct from the previously reported antisite disorder. We show unambiguously that MnBi$_{2}$Te$_{4}$ orders antiferromagnetically below 24 K featured by a magnetic symmetry $R_I$-${3c}$ while MnBi$_{4}$Te$_{7}$ is antiferr…
Magnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall (QAH) effect and Majorana modes, etc. Their successful material realization is thus essential for our fundamental understanding and potential technical revolutions. By realizing a bulk van der Waals material MnBi4Te7 with alternating septuple [MnBi2Te4] and quintuple [Bi2Te3] layers, we show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane saturation field of ~ 0.22 T at 2 K. Our angle-resolved photoemission spect…
MnBi$_2$Te$_4$ (MBT) materials are promising antiferromagnetic topological insulators where field driven ferromagnetism is predicted to cause a transition between axion insulator and Weyl semimetallic states. However, the presence of antiferromagnetic coupling between Mn/Bi antisite defects and the main Mn layer can reduce the low-field magnetization, and it has been shown that such defects are more prevalent in the structurally identical trivial magnetic insulator MnSb$_2$Te$_4$ (MST). We use high-field magnetization measurements to show that the magnetization of MBT and MST occur in stages a…
The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we demonstrate an effort towards the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a tri…
The observation of quantized anomalous Hall conductance in the forced ferromagnetic state of MnBi2Te4 thin flakes has attracted much attentions. However, strong magnetic field is needed to fully polarize the magnetic moments due to the large antiferromagnetic interlayer exchange coupling. Here, we reported the magnetic and electrical transport properties of the magnetic van der Waals MnBi2Te4(Bi2Te3)n (n=1,2) single crystals, in which the interlayer antiferromagnetic exchange coupling is greatly suppressed with the increase of the separation layers Bi2Te3. MnBi4Te7 and MnBi6Te10 show weak anti…
Topological surface states with intrinsic magnetic ordering in the MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ compounds have been predicted to host rich topological phenomena including quantized anomalous Hall effect and axion insulator state. Here we use scanning tunneling microscopy to image the surface Dirac fermions in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$. We have determined the energy dispersion and helical spin texture of the surface states through quasiparticle interference patterns far above Dirac energy, which confirms its topological nature. Approaching the Dirac point, the native defects in the …
Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films
The Pennsylvania State University（宾夕法尼亚州立大学）；Paul Scherrer Institute（保罗谢尔研究所）；National Institute of Standards and Technology（美国国家标准与技术研究院）；National High Magnetic Field Laboratory（国家高磁场实验室）
The magnetic structures of MnBi2Te4(Bi2Te3)n can be manipulated by tuning the interlayer coupling via the number of Bi2Te3 spacer layers n, while the intralayer ferromagnetic (FM) exchange coupling is considered too robust to control. By applying hydrostatic pressure up to 3.5 GPa, we discover opposite responses of magnetic properties for n = 1 and 2. MnBi4Te7 stays at A-type antiferromagnetic (AFM) phase with a decreasing Néel temperature and an increasing saturation field. In sharp contrast, MnBi6Te10 experiences a phase transition from A-type AFM to a quasi-two-dimensional FM state with a s…
Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is …
We report direct visualization of spin-flip transition of the surface layer in antiferromagnet MnBi4Te7, a natural superlattice of alternating MnBi2Te4 and Bi2Te3 layers, using cryogenic magnetic force microscopy (MFM). The observation of magnetic contrast across domain walls and step edges confirms that the antiferromagnetic order persists to the surface layers. The magnetic field dependence of the MFM images reveals that the surface magnetic layer undergoes a first-order spin-flip transition at a magnetic field that is lower than the bulk transition, in excellent agreement with a revised Mil…
The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus the quantized Hall resistance can only be achieved at the magnetic field above 6 T. In this work, we propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. Our calculations hav…
Tailoring magnetic orders in topological insulators is critical to the realization of topological quantum phenomena. An outstanding challenge is to find a material where atomic defects lead to tunable magnetic orders while maintaining a nontrivial topology. Here, by combining magnetization measurements, angle-resolved photoemission spectroscopy, and transmission electron microscopy, we reveal disorder-enabled, tunable magnetic ground states in MnBi$_6$Te$_{10}$. In the ferromagnetic phase, an energy gap of 15 meV is resolved at the Dirac point on the MnBi$_2$Te$_4$ termination. In contrast, an…
The recently discovered antiferromagnetic topological insulator MnBi$_2$Te$_4$ hosts a variety of exotic topological quantum phases such as the axion insulator and Chern insulator states. Here we report systematic gate voltage dependent magneto transport studies in six septuple-layer MnBi$_2$Te$_4$. In p-type carrier regime, we observe positive linear magnetoresistance when MnBi$_2$Te$_4$ is polarized in the ferromagnetic state by an out-of-plane magnetic field. Whereas in n-type regime, distinct negative magnetoresistance behaviors are observed. The magnetoresistance in both regimes is highly…
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous seri…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-te…
The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi$_2$Te$_4$. We demonstrate that interlayer \textit{ferromagnetism} can be established by utilizing the \textit{p}-doping method in MnBi$_2$Te$_4$ multilayers. In two septuple-layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation…
In the newly discovered magnetic topological insulator MnBi$_2$Te$_4$, both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure. The related (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states. Here, we report angle-resolved photoemission spectroscopy (ARPES) studies on a series of the heterostructures (MnBi$_2$Te$_4$, MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$). A universal gapless Dirac cone is observed at the MnBi$_2$Te$_4$ t…
The antiferromagnetic (AFM) topological insulator MnBi$_{2}$Te$_{4}$ was believed to have a topological surface state (TSS) with large band gap due to the ferromagnetic (FM) order on the surface, and be able to host the long-sought axion states. However, recent angle-resolved photoemission spectroscopy (ARPES) experiments indicate that the TSS is gapless, contradicting the theoretical predictions. Meanwhile, several experiments have suggested that there is robust out-of-plane FM order on the surface of MnBi$_{2}$Te$_{4}$. To understand these seemingly contradictory results, we carry out compre…
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration…
The metastable layered compound MnBi2Te4 is the first experimentally realized intrinsic antiferromagnetic topological insulator, predicted to host the quantum anomalous Hall effect at high temperatures upon exfoliation to atomically thin layers. While its magnetic ordering and topological properties have generated intensive interest, the mechanism behind its metastability and the ideal crystal synthesis conditions have remained elusive. Here, using a combined first-principles-based approach that considers lattice, charge, and spin degrees of freedom, we investigate the metastability of MnBi2Te…
