The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental solubility limit we were able to perfectly reproduce the Power Factor measured in polycrystalline ZnSb samples. The methodology has then been successfully extended for predicting the effect of extrinsic doping elements on the thermoelectric properties of ZnSb. Germanium and tin seem to be promising p-type doping elements. In addition, we give, for the first time, an explanation of why it is difficult to synthesize polycrystalline n-type ZnSb samples. Indeed, compensative effects between intrinsic defects (zinc vacancies) and doping elements (Ga, or In) explain the existence of an optimal (and relatively high) dopant concentration necessary to convert ZnSb into an n-type semiconductor.
We report a combined theoretical and experimental search for thermoelectric materials based on semiconducting zinc antimony. Influence of three new doping elements (sodium, potassium and boron) on the electronic properties is investigated as well as the carrier concentration and temperature dependence of the thermoelectric coefficients obtained through density-functional calculations and Boltzmann transport theory. Distortion of the electron arrangement caused by the doping elements is displayed as a deformation charge density around the atoms. Based on the band structures, the density of stat…
Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising electronic conductivity. This concept was investigated in the present paper for a specific material (ZnSb) by a combination of first-principles atomic-scale calculations, Boltzmann transport theory, and experimental studies of the same system. The potential of filtering in this material was first quantified, and it was as an example found that the power factor could be enhanced by…
The intermetallic compound ZnSb is an interesting thermoelectric material, largely due to its low lattice thermal conductivity. The origin of the low thermal conductivity has so far been speculative. Using multi-temperature single crystal X-ray diffraction (9 - 400 K) and powder X-ray diffraction (300 - 725 K) measurements we characterized the volume expansion and the evolution of structural properties with temperature and identify an increasingly anharmonic behavior of the Zn atoms. From a combination of Raman spectroscopy and first principles calculations of phonons we consolidate the presen…
We report on S-doping of ZnSb for S concentrations ranging from 0.02 at% to 2.5 at%. There are no previous reports on S-doping. ZnSb is a thermoelectric material with some advantages for the temperature range 400 K - 600 K. The solid solubility of S in ZnSb was estimated to be lower than 0.1% from observations of precipitates by scanning microscopy. Hall and Seebeck measurements were performed as a function of temperature from 6K to 623 K. The temperature dependence of the electrical properties suggests that S introduces neutral scattering centers for holes in the p-type material. An increase …
We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material. Concerning the electronic properties, in addition to the band structure, we show that the Zn (Sb) crystallographically equivalent atoms are not exactly equivalent from the electronic point of view. Lattice dynamics, elastic and thermodynamic properties are found to be in good agreemen…
The low energy band structure near the band gap determines the electrical performance of thermoelectric materials. Here, by using the hybrid-density functional theory (hybrid-DFT) calculations, we calculate the low energy band structure of Bi2Te3, Sb2Te3, Bi2Se3 and Sb2Se3 in tetradymite phase. We find that the band structure characteristics are very sensitive the selection of the exchange energy functional. The predictability of the band gaps and band degeneracies is not enhanced in hybrid-DFT calculations, as compared to DFT calculations. The poor prediction of low energy band structures is …
We study the electronic structure and thermoelectric properties of recently synthesized CoAsSb. The calculated bandgap becomes more accurate for increasingly-complex electronic structure methods: generalized gradient approximation, hybrid functionals, self-consistent linearized quasiparticle GW method (LQSGW), and LQSGW with simplified vertex corrections. By equating the bandgaps of each method from a rigid shift of the bands, we evaluate the contributions made to thermoelectric properties beyond the bandgap. In doing so, we evaluate the efficacy of a common-practice: a rigid shift applied to …
We have investigated the optoelectronic and thermoelectric properties of hexagonal antiperovskites Ba$_3$DN (D = Sb, Bi) using DFT calculations. The calculated equilibrium lattice parameters of both compounds are in good agreement with the available data. The calculated electronic structures indicate that they are direct bandgap semiconductors and the values of bandgaps are 1.35 and 1.33 eV for Ba3SbN and Ba3BiN, respectively. The inclusion of the spin-orbit effect split the conduction bands and the band gap of Ba$_3$BiN is much reduced. These two compounds have a high absorption coefficient, …
Antiperovskite materials are well known for their high thermoelectric performance and gained huge research interest. Here, we report the structural stability and transport properties of Sr$_3$AsN from a precise first-principles study. The calculated equilibrium lattice parameters are in a good agreement with the available data. We find that Sr$_3$AsN is a mechanically, energetically and dynamically stable at ambient condition. Our calculated electronic structure indicates that it is a direct bandgap semiconductor, with a value ~1.2 eV. Sr-4d and N-2p orbitals mainly formulate the direct bandga…
We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently accurate phonon frequencies and group velocities to compute reliable thermoelectric properties. To this end, the results are compared to available DFT results and experimental data. To quantify the accuracy for a given band, a descriptor is introduced that summarizes contributions to the lattice conductivity that are available already in the harmonic approx…
We have explored the mechanical, electronic, optical and thermoelectric properties of p-type half-Heusler compound BaAgP for the first time using density functional theory based calculations. The mechanical and dynamical stability of this compound is confirmed by studying the Born stability criteria and phonon dispersion curve, respectively. It is soft, ductile and elastically anisotropic. The atomic bonding along a-axis is stronger than that along c-axis. The calculated electronic structure reveals that the studied compound is an indirect band gap semiconductor. The analysis of charge density…
The Lorenz number (L) contained in the Wiedemann-Franz law represents the ratio of two kinetic parameters of electronic charge carriers: the electronic contribution to the thermal conductivity (K_el) and the electrical conductivity (sigma), , and can be expressed as LT=K_el/sigma where T is temperature. We demonstrate that the Lorenz number simply equals to the ratio of two thermodynamic quantities: the electronic heat capacity (c_el) and the electrochemical capacitance (c_N) through LT=c_el/c_N , a purely thermodynamic quantity, and thus it can be calculated solely based on the electron densi…
Tailoring the Optoelectronic, Photocatalytic, Thermoelectric and Thermodynamic Properties of Halides Li2InBiX6 (X = Cl, Br, I) for Energy Conversion: A DFT Study
Princess Nourah Bint Abdulrahman University（公主诺拉·宾特·阿卜杜勒拉赫曼大学）；University of West Bohemia（西波希米亚大学）；University of Sargodha（萨尔戈达大学）；King Saud University（沙特国王大学）；Gachon University（迦南大学）
In this work, we first perform a systematic search for high-efficiency three-dimensional (3D) and two-dimensional (2D) thermoelectric materials by combining semiclassical transport techniques with density functional theory (DFT) calculations and then train machine-learning models on the thermoelectric data. Out of 36000 three-dimensional and 900 two-dimensional materials currently in the publicly available JARVIS-DFT database, we identify 2932 3D and 148 2D promising thermoelectric materials using a multi-steps screening procedure, where specific thresholds are chosen for key quantities like b…
Rare-earth monopnictides have attracted much attention due to their unusual electronic and topological properties for potential device applications. Here, we study rock-salt structured lanthanum monopnictides LaX (X = P, As) by density functional theory (DFT) simulations. We show systematically that a meta-GGA functional combined with scissor correction can efficiently and accurately compute electronic structures on a fine DFT $k$-grid, which is necessary for converging thermoelectric calculations. We also show that strain engineering can effectively improve thermoelectric performance. Under t…
On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPt$_4$Ge$_{12-x}$Sb$_x$ with M=Ba,La,Th. It is predicted that the originally very small absolute values of Seebeck coefficients $|S|$ of the undoped compounds is increased by factors of 10 or more for suitable dopings. The optimal dopings correspond to a "magic" valence electron number for which all electronic states up to a (pseudo)gap are filled. The theoretical findings are corroborated by measurements of $S$ for LaPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites. DFT derived …
New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence reducing the photoelectronic efficiency for device applications. Here we report a significant band gap reduction from 3.3 eV to 0.6 eV by substitutional doping and its effect on opto-electronic and opto-thermoelectric properties from first-principles study. The results predict that Sn/Pb and Ga & Cu co-doping enhance the density of states significantly near th…
Researchers have addressed the non-traditional power generation schemes as alternatives to the traditional fossil-fuel methods enormously since the scientific community has serious concerns about shortages of energy on our planet for future generations. In this scenario, the innovative materials for photovoltaic and thermoelectric device applications are required by addressing current issues of instability and efficiency. Perovskites are very popular in this regard particularly having higher power conversion efficiency of 25.2% in the case of solar cells. In the current article, we investigate…
As the energy problem becomes more prominent, researches on thermoelectric (TE) materials have deepened over the past few decades. Low thermal conductivity enables thermoelectric materials better thermal conversion performance. In this study, based on the first principles and phonon Boltzmann transport equation, we studied the thermal conductivities of single-layer WSe2 under several defect conditions using density functional theory (DFT) as implemented in the Vienna Ab-initio Simulation Package (VASP). The lattice thermal conductivities of WSe2 under six kinds of defect states, i.e., PS, SS-c…
Using the density functional theory (DFT) in combination with Boltzmann transport theory, the influence of Mg concentrations (x) doping on the thermoelectric properties of Hg1-xMgxSe ternary alloys was systematically investigated. The generalized gradient approximations of Perdew-Burke-Ernzerhof (GGA-PBE) have been used to illustrate the exchange correlation potential. Various thermoelectric transport parameters, such as the Seebeck coefficient (S), the thermal conductivity over relaxation time, the electrical conductivity over relaxation time, the power factor (PF) and the figure of merit (ZT…
DFT aided prediction of phase stability, optoelectronic and thermoelectric properties of A2AuScX6 (A= Cs, Rb; X= Cl, Br, I) double perovskites for energy harvesting technology
We report $^{59}$Co, $^{93}$Nb, and $^{121}$Sb nuclear magnetic resonance (NMR) measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb and NbFeSb, to better understand their electronic properties and general composition-dependent trends. These materials are of interest as potentially high efficiency thermoelectric materials. Compared to the other materials, we find that ZrCoSb tends to have a relatively large amount of local disorder, apparently antisite defects. This contributes to a small excitation…
We propose a new method for accurately calculating electrical transport properties of a lightly-doped thermoelectric material from density functional theory (DFT) calculations, based on experimental data and density functional theory results for the corresponding undoped material. We employ this approach because hybrid DFT calculations are prohibitive for the large supercells required to model low dopant concentrations comparable to those achieved experimentally for high-performing thermoelectrics. Using zinc antimonide as our base material, we find that the electrical transport properties cal…
The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows…
The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied doping distances, and atomic dopant interactions for the same substitutional doping concentration. The results indicate that the Ga atoms alter the band structure and the band gap in the silicene monolayer at various concentrations, which can be referred back to to the repulsive interaction of Ga-Ga atoms. The band gap is determined by the interaction stren…
Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range $300-800$ K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters of a = b = c = 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of $\sim-$81 $μ$V/K at room temperature. The $|S|$ first increases till 560 K ($\sim-$93 $μ$V/K) and then decreases up to 800 K ($\sim-$84 $μ$V/K) i…
Vanadium-Engineered Co2NiSe4 Nanomaterial: Coupled Thermoelectric, Piezoelectric, and Electronic Optimization via DFT+U for Advanced Energy Applications
For high efficiency thermoelectric power conversion not only improvement of materials properties but also prediction and synthesis of new thermoelectric materials is needed. Here we have carried out a systematic investigation on thermoelectric performance of newly predicted two dimensional (2D) semiconducting SiS2 and SiSe2 monolayers of group IVA-VIA family using density functional theory (DFT) and Boltzmann transport equation (BTE). Our computed values of lattice thermal conductivity (kph) are ultralow which result very high thermoelectric figure of merit (ZT) value of 0.78 (0.80) at 500K in…
The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature electronic transport coefficients are evaluated within the semi-classical Boltzmann theory. The electrical conductivity exhibits anisotropic behavior while the Seebeck coefficient is almost isotropic. At the optimal doping level and room temperature, bulk black-P and phosphorene are found to have large thermoelectric power factors of 118.4 and 138.9 μWcm-1K-2, …
Heusler type compounds have long been recognized as potential thermoelectric (TE) materials. Here, the experimentally observed TE properties of Fe$_{2}$VAl are understood through electronic structure calculations in the temperature range of $300-800$ K. The observed value of $S$ is $\sim-$138 $μ$V/K at 300 K. Then, the $|S|$ decreases with increase in temperature up to the highest temperature with the value of $\sim-$18 $μ$V/K at 800 K. The negative sign of $S$ in the full temperature window signifies the dominating $n$-type character of the compound. The temperature dependent of electrical co…
Utilizing a material in thermoelectric applications requires a mechanical, thermal, and lattice stability as well a high figure of merit (ZT). In this work, we present the structural, electronic, magnetic, mechanical, thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y = Ti, Cr) quaternary Heusler compounds using the density functional theory (DFT). The calculated mechanical properties and phonon dispersions reveal that the structures of these compounds are stable. Both CoFeCrGe and CoFeTiGe compounds show a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps …
High-throughput calculations are a very promising tool for screening a large number of compounds in order to discover new useful materials. Ternary intermetallic are thus investigated in the present work to find new compounds potentially interesting for thermoelectric applications. The screening of the stable non-metallic compounds required for such applications is obtained by calculating their electronic structure by DFT methods. In a first part, the study of the density of states at the Fermi level of well-known chemical elements and binary compounds allows to empirically optimize the select…
Thermoelectric materials based on earth-abundant and non-toxic elements are very useful in cost-effective and eco-friendly waste heat management systems. The constituents of SrGaSnH are earth-abundant and non-toxic, thus we have chosen SrSnGaH to study its structural stability and thermoelectric properties by using DFT, DFPT, and semi-classical Boltzmann transport theory. Our elastic and phonons calculations show that the compound has good structural stability. The electronic structure calculation discloses that it is an indirect bandgap (0.63 eV by mBJ+SOC) semiconductor. Light band hole effe…
The recently proposed density functional theory for steady-state transport (i-DFT) is extended to include temperature gradients between the leads. Within this framework, a general and exact expression is derived for the linear Seebeck coefficient which can be written as the sum of the Kohn-Sham coefficient and an exchange-correlation contribution. The formalism is applied to the single-impurity Anderson model for which approximate exchange-correlation functionals are suggested for temperatures both above and below the Kondo temperature. A certain structural property of the exchange-correlation…
Boltzmann transport calculations based on band structures generated with density functional theory (DFT) are often used in the discovery and analysis of thermoelectric materials. In standard implementations, such calculations require dense ${\it k}$-point sampling of the Brillouin zone and are therefore typically limited to the generalized gradient approximation (GGA), whereas more accurate methods such as hybrid functionals would have been preferable. GGA variants, however, generally underestimate the band gap. While premature onset of minority carriers can be avoided with scissor corrections…
First-Principles Study of Novel Lead-Free Double Perovskite \b{eta}2SnGeX6 (\b{eta} = K, Rb; X = Cl, Br, I) for thermomechanical, optoelectronic and outstanding thermoelectric applications
We assess the impact of the scattering physics assumptions on the thermoelectric properties of five Co-based p-type half-Heusler alloys by considering full energy-dependent scattering times, versus the commonly employed constant scattering time. For this, we employ DFT bandstructures and a full numerical scheme that uses Fermi's Golden Rule to extract the momentum relaxation times of each state at every energy, momentum, and band. We consider electron-phonon scattering (acoustic and optical), as well as ionized impurity scattering, and evaluate the qualitative and quantitative differences in t…
First-Principles Investigation of Sr2PrSbO6 Double Perovskite: An Emerging Aspirant for Electrocatalysis, Plasmonic, Photonics, Thermoelectric and Solar Cell Applications
The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations …
We report $^{93}$Nb and $^{121}$Sb NMR and $^{57}$Fe Mössbauer studies combined with DFT calculations of Nb$_{1-x}$Ti$_x$FeSb ($0\leqslant x \leqslant0.3$), one of the most promising thermoelectric systems for applications above 1000 K. These studies provide local information about defects and electronic configurations in these heavily $p$-type materials. The NMR spin-lattice relaxation rate provides a measure of states within the valence band. With increasing $x$, changes of relaxation rate vs carrier concentration for different substitution fractions indicate the importance of resonant level…
In contrast to monolayer graphene, in bilayer graphene (BLG) one can induce a tunable bandgap by applying an external electric field, which makes it suitable for field effect applications. Extrinsic doping of BLGs enriches the electronic properties of the graphene-based family, as their behavior can be switched from an intrinsic small-gap semiconductor to a degenerate semiconductor. In the framework of density functional theory (DFT) calculations, we investigate the electronic and thermoelectric properties of BLGs doped with extrinsic impurities from groups III (B, Al, Ga), IV (Si, Ge) and V (…
