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arXiv 1206.4428cond-mat.mtrl-sci
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能带工程优化MPt $_4$ Ge $_{12-x}$ Sb $_x$填充方钴矿的热电性能

Optimizing thermoelectric properties of filled MPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites by band engineering

M. X. Chen, R. Podloucky, S. Humer, E. Bauer, P. Rogl

摘要:

利用密度泛函理论(DFT)计算了Sb掺杂方钴矿$_4$ Sb $_x$(M=Ba,La,Th)的热电性质.据预测,原来非常小的绝对值的塞贝克系数$|S|$的未掺杂的化合物增加了10倍或更多的合适的掺杂。最佳掺杂对应于一个“魔术”价电子数,所有的电子状态(伪)间隙被填充。对LaPt $_4$ Ge $_{12-x}$ Sb $_x$方钴矿的$S$测量结果证实了理论结果。DFT计算得到的LaPt $_4$ Ge $_{12}$的振动振颤模式表明晶格热导率很小,而$S^2$很大,这使得La基方钴矿成为一种很有前途的热电材料。

英文摘要:

On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPt$_4$Ge$_{12-x}$Sb$_x$ with M=Ba,La,Th. It is predicted that the originally very small absolute values of Seebeck coefficients $|S|$ of the undoped compounds is increased by factors of 10 or more for suitable dopings. The optimal dopings correspond to a "magic" valence electron number for which all electronic states up to a (pseudo)gap are filled. The theoretical findings are corroborated by measurements of $S$ for LaPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites. DFT derived vibrational rattling-like modes for LaPt$_4$Ge$_{12}$ indicate a small value for the lattice thermal conductivity which in combination with a large value of $S^2$ makes the La-based skutterudites appear as promising thermoelectric materials.

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