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arXiv 2403.01149cond-mat.mtrl-sci
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压力下二维黑磷丰富电子结构演化的统一理解

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Yu-Meng Gao, Yue-Jiao Zhang, Xiao-Lin Zhao, Xin-Yu Li, Shu-Hui Wang, Chen-Dong Jin, Hu Zhang, Ru-Qian Lian, Rui-Ning Wang, Peng-Lai Gong, Jiang-Long Wang, Xing-Qiang Shi

AI总结:

本文提出以层间准键合与层内化学键合的竞争及四能级相互作用模型,统一解释少层黑磷在压力下带隙非单调变化等电子结构演化。

摘要:

少层黑磷(BP)在压力下的电子结构演化展现出丰富现象,例如Γ点直接带隙的非单调变化、层数依赖性,以及对法向压力和静水压的不同响应。目前仍缺乏对这些丰富现象的完整且统一的理解。在此,我们从层间准键合(QB)相互作用与层内化学键合相互作用之间的竞争出发,给出一种统一理解。前者在压力下减小带隙,而后者增大带隙;其来源可与带边处层间和层内反键或键合相互作用的不同组合相关联。更有趣的是,层间QB相互作用是两类相互作用的共存,即相同占据态能带之间的相互作用(占据-占据和空-空相互作用)与不同占据态能带之间的相互作用(占据-空相互作用)共存;并且,其总体效应是一种四能级相互作用,这解释了双层BP导带边异常的层间反键特征。本研究为二维(2D)BP的电子结构调控奠定了基础,而且我们的多能级相互作用分析方法可推广应用于其他具有占据-空层间相互作用的二维半导体同质结构和异质结构。

英文摘要:

The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the Γ point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the competition between interlayer quasi-bonding (QB) interactions and intralayer chemical bonding interactions. The former decreases while the latter increases the band gap under pressure and the origin can be correlated to different combinations of inter- and intra-layer antibonding or bonding interactions at the band edges. More interestingly, the interlayer QB interactions are a coexistence of two categories of interactions, namely, the coexistence of interactions between bands of the same occupancy (occupied-occupied and empty-empty interactions) and of different occupancies (occupied-empty interaction); and, the overall effect is a four-level interaction, which explains the anomalous interlayer-antibonding feature of the conduction band edge of bilayer BP. Our current study lay the foundation for the electronic structure tuning of two-dimensional (2D) BP, and, our analysis method for multi-energy-level interactions can be applied to other 2D semiconductor homo- and hetero-structures that have occupied-empty interlayer interactions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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