$β$ - GeSe - A六环非常见船形半导体的高压合成与表征
High-Pressure Synthesis and Characterization of $β$-GeSe - A Semiconductor with Six-Rings in an Uncommon Boat Conformation
摘要：
二维材料在开发新器件方面具有巨大的潜力。在这里，我们报告的电子和结构性质的$β$ -GeSe，以前未报道的多晶型的GeSe，具有独特的晶体结构，显示出强大的二维结构特征。$β$ -GeSe是在高压和高温下制备的，在环境条件下稳定。我们比较它的结构和电子亲属$α$ -GeSe和黑磷。GeSe的$β$形式显示其Ge-Se六环的船形构象，而先前已知的$α$形式和黑磷显示其六环的更常见的椅形构象。电子结构计算表明，$β$是一种半导体，其体带隙约为$Δ~\approx$ 0.5 eV，单层形式的$Δ~\approx$约为$Δ~\approx$ 0.9 eV.这些值落在$α$ -GeSe和黑磷的值之间，使得$β$ -GeSe成为未来应用的有希望的候选物。我们的$β$晶体的面内测量的电阻率在$ρ\approx$ 1 $Ω$ cm的数量级上，同时基本上与温度无关.
英文摘要：
Two-dimensional materials have significant potential for the development of new devices. Here we report the electronic and structural properties of $β$-GeSe, a previously unreported polymorph of GeSe, with a unique crystal structure that displays strong two-dimensional structural features. $β$-GeSe is made at high pressure and temperature and is stable under ambient conditions. We compare it to its structural and electronic relatives $α$-GeSe and black phosphorus. The $β$ form of GeSe displays a boat conformation for its Ge-Se six-ring, while the previously known $α$ form, and black phosphorus, display the more common chair conformation for their six-rings. Electronic structure calculations indicate that $β$-GeSe is a semiconductor, with an approximate bulk band gap of $Δ~\approx$ 0.5 eV, and, in its monolayer form, $Δ~\approx$ 0.9 eV. These values fall between those of $α$-GeSe and black phosphorus, making $β$-GeSe a promising candidate for future applications. The resistivity of our $β$-GeSe crystals measured in-plane is on the order of $ρ\approx$ 1 $Ω$cm, while being essentially temperature independent.
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