arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1905.05511cond-mat.mtrl-scicond-mat.str-el
收藏

用$^{31}$ P-NMR研究黑磷的压致能带结构演化

Pressure induced evolution of band structure in black phosphorus studied by $^{31}$P-NMR

T. Fujii, Y. Nakai, Y. Akahama, K. Ueda, T. Mito

摘要:

本文用$^{31}$ P-核磁共振研究了二维层状半导体黑磷(BP)的能带结构.还进行了能带计算以估计态密度$D(E)$。用导出的$D(E)$很好地再现了半导体相核自旋晶格弛豫速率$1/T_1$的温度和压力依赖性,得到的半导体带隙的压力依赖性与以前的报道很好地一致,很好地证实了BP能带计算是相当可靠的.本分析的$1/T_1$数据与补充的理论计算,使我们能够提取必要的信息,如$D(E)$和化学势的压力依赖性,以及分解观察到的$1/T_1$到内在和外在的贡献。$1/T_1$在1.63GPa下的突然增加表明半导体间隙闭合,导致电导率的增强。

英文摘要:

Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states $D(E)$. The temperature and pressure dependences of nuclear spin lattice relaxation rate $1/T_1$ in the semiconducting phase are well reproduced using the derived $D(E)$, and the resultant pressure dependence of semiconducting gap is in good accordance with previous reports, giving a good confirmation that the band calculation on BP is fairly reliable. The present analysis of $1/T_1$ data with the complemental theoretical calculations allows us to extract essential information, such as the pressure dependences of $D(E)$ and chemical potential, as well as to decompose observed $1/T_1$ into intrinsic and extrinsic contributions. An abrupt increase in $1/T_1$ at 1.63GPa indicates that the semiconducting gap closes, resulting in an enhancement of conductivity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑