Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS3) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid Hartree-Fock-DFT B3LYP functional. Our calculations reproduce correctly the IMT at ~15 GPa, which is accompanied by a reduction of the unit cell volume and of the vdW gap. We found from the detailed analysis of the projected density of states that the 3p states of phosphorus atoms contribute significantly at the bottom of the conduction band. As a result, the collapse of the band gap occurs due to changes in the electronic structure of FePS3 induced by relative displacements of phosphorus or sulfur atoms along the c-axis direction under pressure.
We propose a tubal van der Waals heterostructure by rolling up the graphene and MoS2 atomic layers into a tubal form. We illustrate that the interlayer space for the tubal van der Waals heterostructure can be varied in a specific range, which is determined by the competition between the interlayer van der Waals force and the mechanical properties of the atomic layers. The variability of the interlayer space can be utilized to efficiently tune mechanical properties of the tubal van der Waals heterostructure. More specifically, we demonstrate that the Poisson's ratio of the tubal van der Waals h…
Van der Waals density functional: Self-consistent potential and the nature of the van der Waals bond
我们导出了对应于非定域范德华密度泛函的交换关联势[M。迪翁，H。Rydberg，E. Schroder，D. C. Langreth，和B. I. Lundqvist，《物理评论快报》92，246401（2004）]。我们使用这种潜在的自洽计算的基态属性的一些范德华络合物以及晶体硅。对于后者，很少或没有范德华相互作用的预期，我们发现，结果主要是由半局部交换和相关性在标准的广义梯度近似（GGA），与完全非局部项几乎没有影响。另一方面，我们的研究结果表明，范德瓦尔斯复合物的自洽在平衡分离的影响不大。这一发现验证了以前的计算与相同的功能，治疗完全非本地项作为一个后GGA扰动。我们的结果与波函数计算的比较表明，我们的方法的实用性。交换相关势也使我们能够计算赫尔曼-费曼力，从而提供了有效的几何弛豫方法，并释放了依赖于自洽电荷分布的其他标准技术的潜在用途。范德瓦尔斯键的性质进行了讨论的自洽键电荷。
A literature survey of experimentally measured mobility values for the two-dimensional materials MoS2, MoSe2, MoTe2, WS2, WSe2, and black phosphorous carried out during 2015.
The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals mater…
Bending-Induced Delamination of van der Waals Solids
尽管层状范德华固体片为定制设计纳米材料性能提供了很大的机会，但其弱的层间粘附力对机械变形的结构稳定性提出了挑战。在这里，弯曲引起的分层的多层片材的分子动力学模拟，使用石墨烯作为原型范德华固体。模拟显示，当石墨烯片的曲率半径大致减小到低于$R_c=5.3\text{nm}\times (\text{number of layers})^{3/2}$时，发生石墨烯片的分层，并且通常三分之一的层分层。这些明确的结果解释了一个通用的和透明的模型，一个有用的未来的参考指导纳米结构的范德华固体的设计。
Heat conduction mechanisms in superlattices could be different across different types of interfaces. Van der Waals superlattices are structures physically assembled through weak van der Waals interactions by design, and may host properties beyond the traditional limits of lattice matching and processing compatibility, offering new types of interfaces. In this work, natural van der Waals (SnS)1.17(NbS2)n superlattices are synthesized, and their thermal conductivities are measured by time-domain thermoreflectance as a function of interface density. Our results show that heat conduction of (SnS)1…
We used the binding energy-bond-charge model to study the atomic bonding and electrical properties of the two-dimensional graphene/BN van der Waals heterostructure. We manipulated its atomic bonding and electrical properties by manufacturing defects. We discovered that this process yielded a band structure with a flat band, i.e., a horizontal band structure without dispersion at the Fermi level. Thus, our research is significant because it is the first report on this flat band of defect graphene/BN van der Waals heterostructures.
Using the density functional theory calculations, we studied the ferroelectric, electrical and optical properties of series of bias-controllable endohedral fullerenes (TM@C28, TM= Ti-Ni). The important finding is that Cr@C28 has a large electric dipole moment and an appropriate bandgap (~1.2eV) as building blocks for ferroelectric-photovoltaic materials. By sandwiching Cr@C28 molecules between two van der Waals layers, e.g., graphene or transition metal dichalcogenides, the heterostructures may have exotic ferroelectric and photovoltaic properties with high tunability and performance.
The aim of this study is to clarify the physics which governs the transition from epsilon phase to zeta phase of solid oxygen observed experimentally at 96 GPa using density functional theory (DFT). The transition was predicted at 40 GPa with PBE functional. Then the Hubbard correction was added to enhance the localization of p-orbital of oxygen. The epsilon-zeta transition pressure was significantly improved to 70 GPa. Finally, we included the non-local van der Waals correction. The transition pressure slightly increases to 80 GPa. These results demonstrate that the contribution from Hubbard …
Copper indium thiophosphate, CuInP2S6, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP2S6, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.
We theoretically address grazing incidence fast atom diffraction (GIFAD) for H atoms impinging on a LiF(001) surface. Our model combines a description of the H-LiF(001) interaction obtained from Density Functional Theory calculations with a semi-quantum treatment of the dynamics. We analyze simulated diffraction patterns in terms of the incidence channel, the impact energy associated with the motion normal to the surface, and the relevance of Van der Waals (VdW) interactions. We then contrast our simulations with experimental patterns for different incidence conditions. Our most important find…
Among the van der Waals heterostructures, graphene/h-BN heterostructure is an appropriate candidate for 2D nanoelectronic devices. In this paper, using non-equilibrium molecular dynamics simulation approach, heat transport in bilayer graphene/h-BN and graphene/h-BN van der Waals heterostructure (i.e. h-BN flakes periodically inserted on the top and bottom of a graphene layer) are explored. The results show that by increasing the length of the system, the thermal conductivity of bilayer graphene/h-BN increases. Furthermore, it was revealed that heat transport in graphene/h-BN heterostructure en…
In controlled X-ray irradiation experiments, the formation of trap states in the prototypical van der Waals bonded semiconductor Rubrene is studied quantitatively for doses up to 82 Gy (Gy = J/kg). About 100 electronic trap states, located around 0.3 eV above the valence band, are created by each absorbed 8 keV photon which is 2-3 orders of magnitude more than 1 MeV protons produce. Thermal annealing is shown to reduce these traps. Local structural disorder, which has also been induced by other means in different studies, is thus identified as a common origin of trap states in van der Waals bo…
With the example of hexagonal boron nitride, we demonstrate how the character of electron-hole (e-h) pairs in van der Waals bound low-dimensional systems is driven by layer stacking. Four types of excitons appear, with either a two- or three-dimensional spatial extension. Electron and hole distributions are either overlapping or exhibit a charge-transfer nature. We discuss under which structural and symmetry conditions they appear and they are either dark or bright. This analysis provides the key elements to identify, predict, and possibly tailor the character of e-h pairs in van der Waals mat…
We examined what interactions control the sign and strength of the interlayer coupling in van der Waals ferromagnets such as Fe3-xGeTe2, Cr2Ge2Te6, CrI3 and VI3, to find that high-spin orbital interaction across the van der Waals gaps are a key to understanding their ferromagnetism. Interlayer ferromagnetic coupling in Fe3-xGeTe2 Cr2Ge2Te6, and CrI3 is governed by the high-spin two-orbital two-electron destabilization, but that in VI3 by the high-spin four-orbital two-electron stabilization. These interactions explain a number of seemingly puzzling observations in van der Waals fer-romagnets.
The recent emergence of 2D van der Waals magnets down to atomic layer thickness provides an exciting platform for exploring quantum magnetism and spintronics applications. The van der Waals nature stabilizes the long-range ferromagnetic order as a result of magnetic anisotropy. Furthermore, giant tunneling magnetoresistance and electrical control of magnetism have been reported. However, the potential of 2D van der Waals magnets for magnonics, magnon-based spintronics, has not been explored yet. Here, we report the experimental observation of long-distance magnon transport in quasi-twodimensio…
The van der Waals heterostructures are a fertile frontier for discovering emergent phenomena in condensed matter systems. They are constructed by stacking elements of a large library of two-dimensional materials, which couple together through van der Waals interactions. However, the number of possible combinations within this library is staggering, and fully exploring their potential is a daunting task. Here we introduce van der Waals metamaterials to rapidly prototype and screen their quantum counterparts. These layered metamaterials are designed to reshape the flow of ultrasound to mimic ele…
The emergence of graphene and two-dimensional van der Walls materials renewed interest to investigation of the low-frequency noise in the low-dimensional systems. The layered van der Waals materials offers unique opportunities for studying the low-frequency noise owing to the properties controlled by the thickness of these materials, and tunable carrier concentration. In this review, we describe unusual low-frequency noise phenomena in quasi-2D and quasi-1D van der Waals materials. We also demonstrate that the low-frequency noise spectroscopy is a powerful tool for investigation of the electro…
Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Chern numbers for each layer are opposite to each other. In bilayer CrI3 where antiferromagnetic ordering has been experimentally demonstrated, we show that the quantum spin Hall-like states appear with spatially separated chiral edge modes.
We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of th…
There has been a huge increase of interests in two-dimensional van der Waals materials over the past ten years or so with the conspicuous absence of one particular class of materials: magnetic van der Waals systems. In this Viewpoint, we point it out and illustrate how we might be able to benefit from exploring these so-far neglected materials.
The cohesive energy, equilibrium lattice constant, and bulk modulus of noble metals are computed by different van der Waals-corrected Density Functional Theory methods, including vdW-DF, vdW-DF2, vdW-DF-cx, rVV10 and PBE-D. Two specifically-designed methods are also developed in order to effectively include dynamical screening effects: the DFT/vdW-WF2p method, based on the generation of Maximally Localized Wannier Functions, and the RPAp scheme (in two variants), based on a single-oscillator model of the localized electron response. Comparison with results obtained without explicit inclusion o…
The exfoliation of two naturally occurring van der Waals minerals, graphite and molybdenite, arouse an unprecedented level of interest by the scientific community and shaped a whole new field of research: 2D materials research. Several years later, the family of van der Waals materials that can be exfoliated to isolate 2D materials keeps growing, but most of them are synthetic. Interestingly, in nature plenty of naturally occurring van der Waals minerals can be found with a wide range of chemical compositions and crystal structures whose properties are mostly unexplored so far. This Perspectiv…
Van der Waals magnets have emerged as a fertile ground for the exploration of highly tunable spin physics and spin-related technology. Two-dimensional (2D) magnons in van der Waals magnets are collective excitation of spins under strong confinement. Although considerable progress has been made in understanding 2D magnons, a crucial magnon device called the van der Waals magnon valve, in which the magnon signal can be completely and repeatedly turned on and off electrically, has yet to be realized. Here we demonstrate such magnon valves based on van der Waals antiferromagnetic insulator MnPS3. …
Van der Waals heterostructures have recently garnered interest for application in high-performance photovoltaic materials. Consequently, understanding the basic electronic characteristics of these heterostructures is important for their utilisation in optoelectronic devices. The electronic structures and bond relaxation of two-dimensional (2D) Sb/transition metal disulfides (TMDs, MoSe2, and MoTe2) van der Waals heterostructures were systematically studied using the bond-charge (BC) correlation and hybrid density functional theory. We found that the Sb/MoSe2 and Sb/MoTe2 heterostructures had i…
Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive mat…
我们应用一系列的密度泛函理论为基础的方法能够描述范德华相互作用弱键合层状固体，以调查其扩展系统的准确性。研究的方法有局域密度近似、半经验力场、非局域范德华密度泛函和随机相位近似。我们调查的平衡几何形状，弹性常数和结合能的一个大的和不同的一组化合物，并得出结论的可靠性不同的方法。研究还指出了非局域van der Waals密度泛函进一步发展的方向。
We present a phenomenological theory for coupled spin-charge dynamics in magnetic van der Waals heterostructures. The system studied consists of a layered antiferromagnet inserted into a capacitive vdW heterostructure. It has been recently demonstrated that charge doping in such layered antiferromagnets can modulate the strength, and even the sign, of exchange coupling between the layer magnetizations. This provides a mechanism for electrically generating magnetization dynamics. The central result we predict here is that the magnetization dynamics reciprocally results in inducing charge dynami…
In recent years, noncollinear topological textures have long gained increasing research attentions for their high values of both fundamental researches and potential applications. The recent discovery of intrinsic orders in magnetic and polar two-dimensional van der Waals materials provides a new ideal platform for the investigation of noncollinear topological textures. Here, we review the theoretical and experimental progresses on noncollinear topological textures in two-dimensional van der Waals materials in very recent years. During these years, magnetic skyrmions of both Bloch and Néel typ…
A van der Waals coupled Weyl semimetal material NbIrTe4 is investigated by combining scanning tunneling microscopy/spectroscopy and first principles calculations. We observe a sharp peak in the tunneling conductance near the zero bias energy, and its origin is ascribed to a van Hove singularity associated with a Lifshitz transition of the topologically none trivial Fermi arc states. Furthermore, tunneling spectroscopy measurements show a surprisingly large signature of electron boson coupling, which presumably represents anomalously enhanced electron phonon coupling through the enhanced charge…
The emergence of a topological superconducting state in van der Waals heterostructures provides a new platform for exploring novel strategies to control topological superconductors. In particular, impurities in van der Waals heterostructures, generically featuring a moire pattern, can potentially lead to the unique interplay between atomic and moire length scales, a feature absent in generic topological superconductors. Here we address the impact of non-magnetic impurities on a topological moire superconductor, both in the weak and strong regime, considering both periodic arrays and single imp…
Prototyping of van der Waals materials on dense nanophotonic devices requires high-precision monolayer discrimination to avoid bulk material contamination. We use the glass transition temperature of polycarbonate, used in the standard dry transfer process, to draw an in situ point for the precise pickup of two dimensional materials. We transfer transition metal dichalcogenide monolayers onto a large-area silicon nitride spiral waveguide and silicon nitride ring resonators to demonstrate the high-precision contamination-free nature of the modified dry transfer method. Our improved local transfe…
