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arXiv 2402.02466cond-mat.mtrl-sci
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添加Y$_2$O$_3$-Al$_2$O$_3$的液相烧结$α$-SiC的微观结构与高温力学性能

Microstructure and high temperature mechanical properties of liquid-phase-sintered $α$-SiC with Y$_2$O$_3$-Al$_2$O$_3$ additions

Miguel Castillo Rodríguez, Antonio Muñoz Bernabé, Arturo Domínguez Rodríguez

AI总结:

本研究通过液相烧结制备了$α$-SiC样品,表征了其微观结构并测试了高温压缩蠕变性能,发现由晶格扩散和位错运动协调的晶界滑动是同时作用的主要变形机制。

摘要:

$α$-SiC样品在氩气气氛中通过液相(LPS)烧结至1950 $^\circ$C,处理时间在1至7小时之间。使用扫描电子显微镜(SEM)对样品的微观结构进行了表征,获得的平均晶粒尺寸随处理时间从0.64增长至1.61 $μ$m。这些样品在恒定载荷下进行了压缩变形实验,温度介于1450至1625 C之间,应力介于25至450 MPa之间,应变速率介于$4.2\ imes 10^{-8}$和$1.5\ imes 10^{-6}$ s$^{-1}$之间。确定了蠕变参数,在烧结1小时的样品中,n值介于2.4 0.1和4.5 0.2之间,Q=680 35 kJ.mol$^{-1}$;在烧结7小时的样品中,n介于1.2 0.1和2.4 0.1之间,Q=710 90 kJ.mol$^{-1}$。这些结果与微观结构相关联,由晶格扩散和位错运动协调的晶界滑动(GBS)是可能的变形机制,两者同时发挥作用。

英文摘要:

Samples of $α$-SiC have been sintered with liquid phase (LPS) to 1950 $^\circ$C, in atmosphere of argon and processing times between 1 and 7 hours. Using scanning electron microscopy (SEM) the microstructure of the samples has been characterized, being obtained average grain size that grows with the processing time from 0.64 to 1.61 $μ$m. These samples have been deformed in compression under constant load, to temperatures between 1450 and 1625 C, stresses between 25 and 450 MPa and strain rate between $4.2\times 10^{-8}$ and $1.5\times 10^{-6}$ s$^{-1}$. The creep parameters have been determined, obtaining for n values between 2.4 0.1 and 4.5 0.2 and Q=680 35 kJ.mol$^{-1}$ in samples sintered during 1 hour and n between 1.2 0.1 and 2.4 0.1 and Q=710 90 kJ.mol$^{-1}$ for samples sintered during 7 hours. These results have been correlated with the microstructure, being the grain boundary sliding (GBS) accommodated by lattice diffusion and the movement of dislocations the possible deformation mechanisms, operating both in a simultaneous way.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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