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arXiv 2402.01503cond-mat.mtrl-sciphysics.app-ph
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斯格明子:面向未来电子器件的材料视角综述

Skyrmions: A review on materials perspective for future electronic devices

Vineet Kumar Sharma, Alana Okullo, Jalen Garner, Cheng Peng, Rajan Plumley, Adrian Feiguin, Chunjing Jia, Josh Turner, A. Bansil, Sugata Chowdhury

AI总结:

本文综述磁性斯格明子的形成机制与候选材料,强调DMI和RKKY相互作用的作用,并指出未来需研究低尺寸斯格明子及极化磁子动力学以推动自旋电子器件发展。

摘要:

近年来,由于磁性斯格明子能够改进当代自旋电子器件,对其研究兴趣急剧上升。本综述文章概述了导致斯格明子形成的各种磁相互作用,以及不同的非中心对称和中心对称斯格明子候选材料。多年来,被称为Dzyaloshinskii-Moriya相互作用(DMI)的磁相互作用已被广泛研究,以更好地理解具有较大斯格明子尺寸的手性磁体中斯格明子的机制。由于其低斯格明子尺寸,中心对称阻挫磁体中的斯格明子由长程相互作用(如Ruderman-Kittel-Kasuya-Yosida相互作用(RKKY))控制,这可能有助于高密度存储器件的发展。为了为斯格明子形成所涉及的磁相互作用及许多其他特殊物理性质奠定坚实基础,需要在中心对称斯格明子领域进行更多研究。除了研究低斯格明子尺寸的候选材料外,未来的主要目标之一是使用极化磁子更好地理解斯格明子的动力学,这有可能对自旋电子应用极为有益。

英文摘要:

Recent years have witnessed an enormous rise in research interest in magnetic skyrmions owing to their capability to improve over contemporary spintronic devices. An overview of the various magnetic interactions responsible for the formation of skyrmion together with distinct noncentrosymmetric and centrosymmetric skyrmion candidates is given in this review article. The magnetic interactions known as Dzyaloshinskii-Moriya interactions (DMI) have been extensively studied over the years to better understand the mechanism of skyrmions in chiral magnets that have larger skyrmion sizes. Because of their low skyrmion size, the centrosymmetric frustrated magnets are dwelling to skyrmions controlled by long-range interactions such as the Ruderman-Kittel-Kasuya-Yosida interaction (RKKY), which may be useful in the development of high-density memory devices. To lay a solid foundation for the magnetic interactions involved in skyrmion formations and many other special physical properties, more research in the field of centrosymmetric skyrmions is required. Apart from studying candidates with low skyrmion sizes, one of the main goals for the future is to better understand the dynamics of skyrmion using polarized magnons, which has the potential to be extremely beneficial for spintronic applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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