具有畸变Kagome晶格的Dirac磁体Fe3Ge中磁各向异性交叉与高温斯格明子的观测
Observation of Magnetic-Anisotropy Crossover and High-Temperature Skyrmions in the Dirac Magnet Fe3Ge with a Distorted Kagome Lattice
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中文总结 AI 辅助
本研究在Dirac Kagome磁体Fe3Ge中观测到高温斯格明子，发现其磁各向异性在375 K发生易平面到易轴的交叉，斯格明子稳定存在于375-650 K宽温区，为高温自旋电子学应用提供了新平台。
中文摘要 AI 辅助
同时承载稳健高温斯格明子和非平凡电子能带结构的拓扑材料，因其在基础研究和前瞻性技术应用中的独特优势而引起了极大兴趣。在此，我们报道了在Dirac Kagome磁体Fe3Ge中观测到稳健的斯格明子，该材料具有约650 K的高居里温度。在室温下，Fe3Ge表现出约380 Ω⁻¹cm⁻¹的大本征反常霍尔电导率，这源于其非平凡的电子能带拓扑。系统的磁化测量揭示了一个约375 K的自旋重取向转变，表明磁各向异性从易平面到易轴的交叉。在自旋重取向温度以下，观测到大的拓扑霍尔效应，其源于微观非共面自旋结构。洛伦兹透射电子显微镜显示，介观尺度的斯格明子在易轴磁各向异性区域中稳定存在，并在375-650 K的极宽温度窗口内持续，远超大多数先前报道的承载斯格明子材料。这些结果确立了Fe3Ge作为探索多种拓扑性质的有前景平台，并具有推动未来高温自旋电子学应用（从下一代信息存储到逻辑计算设备）的强大潜力。
英文摘要
Topological materials that simultaneously host robust high-temperature skyrmions and nontrivial electronic band structures have attracted tremendous interest owing to their distinctive advantages for both fundamental research and prospective technological applications. Here, we report the observation of robust skyrmions in the Dirac kagome magnet Fe3Ge, which exhibits a high Curie temperature of ~ 650 K. At room temperature, Fe3Ge shows a large intrinsic anomalous Hall conductivity of ~ 380 Ω-1cm-1, originating from its nontrivial electronic band topology. Systematic magnetization measurements reveal a spin reorientation transition at ~ 375 K, indicating a crossover from easy-plane to easy-axis magnetic anisotropy. Below the spin reorientation temperature, a large topological Hall effect is observed, arising from microscopic noncoplanar spin structures. Lorentz transmission electron microscopy shows that mesoscopic skyrmions are stabilized in the easy-axis magnetic anisotropy regime and persist over an exceptionally wide temperature window of 375-650 K, far exceeding that of most previously reported skyrmion-hosting materials. These results establish Fe3Ge as a promising platform for exploring diverse topological properties, with strong potential for advancing future high-temperature spintronic applications, ranging from next-generation information storage to logic computing devices.
发表机构
- Zhejiang University of Technology（浙江工业大学）
- Fudan University（复旦大学）
- Nanjing University of Posts and Telecommunications（南京邮电大学）
- Ningbo University（宁波大学）
- Academia Sinica（中央研究院）
- Shanghai University（上海大学）
- Suzhou University of Technology（苏州科技大学）
- Qufu Normal University（曲阜师范大学）
- National Taiwan Normal University（台湾师范大学）
- Zhejiang University（浙江大学）
- Shanghai Jiao Tong University（上海交通大学）
机构由 AI 辅助整理，请以论文原文为准。
