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arXiv 2304.09366cond-mat.mtrl-sciphysics.app-ph
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具有垂直磁各向异性的Pt[CoNi]n多层膜中厚度依赖的磁性质

Thickness-dependent magnetic properties in Pt[CoNi]n multilayers with perpendicular magnetic anisotropy

Chunjie Yan, Lina Chen, Kaiyuan Zhou, Liupeng Yang, Qingwei Fu, Wenqiang Wang, Wen-Cheng Yue, Like Liang, Zui Tao, Jun Du, Yong-Lei Wang, Ronghua Liu

AI总结:

本文系统研究了Pt/[Co/Ni]多层膜中厚度对垂直磁各向异性、磁畴结构和磁化动力学的影响,发现Ni厚度为0.6 nm时PMA系数和矫顽力最优,且本征Gilbert阻尼常数与厚度无关,为自旋电子学器件应用提供了指导。

摘要:

我们结合四种标准磁表征技术,系统研究了Pt(5 nm)/[Co(t_Co nm)/Ni(t_Ni nm)]5/Pt(1 nm)多层膜中Ni和Co厚度依赖的垂直磁各向异性(PMA)系数、磁畴结构和磁化动力学。从场依赖磁化强度M和反常霍尔电阻率(AHR)ρ_xy获得的磁相关磁滞回线发现,在Ni厚度t_Ni = 0.6 nm时,t_Co = 0.2和0.3 nm的两个系列多层膜具有最优的PMA系数K_U以及最高的矫顽力H_C。此外,通过磁光克尔效应(MOKE)显微镜获得的磁畴结构也显著依赖于薄膜的厚度和K_U。进一步地,铁磁共振线宽的厚度依赖性与K_U和H_C成反比,表明不均匀的磁性质主导了线宽。然而,通过频率依赖线宽的线性拟合确定的本征Gilbert阻尼常数不依赖于Ni厚度和K_U。我们的结果有助于推动PMA [Co/Ni]多层膜在各种自旋电子学和自旋轨道电子学器件中的应用。

英文摘要:

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co(t_Co nm)/Ni(t_Ni nm)]5/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization M and anomalous Hall resistivity (AHR) \r{ho}_xy found that the two serial multilayers with t_Co = 0.2 and 0.3 nm have the optimum PMA coefficient K_U well as the highest coercivity H_C at the Ni thickness t_Ni = 0.6 nm. Additionally, the magnetic domain structures obtained by Magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and K_U of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to K_U and H_C, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of frequency-dependent linewidth does not depend on Ni thickness and K_U. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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