arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1612.04867cond-mat.mtrl-sci
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垂直Co/Ni多层膜中的粗糙度诱导畴结构

Roughness-induced domain structure in perpendicular Co/Ni multilayers

N. R. Lee-Hone, R. Thanhoffer, V. Neu, R. Schäfer, M. Arora, R. Hübner, D. Suess, D. M. Broun, E. Girt

摘要:

我们研究了在不同厚度的Cu种子层上生长的Co/Ni薄膜的粗糙度、剩磁和矫顽力之间的相关性。增加Ta/Cu/8 x [Co/Ni]薄膜的Cu种子层厚度会增加薄膜的粗糙度。面内磁化循环表明,剩磁和矫顽力都随着种子层粗糙度的增加而增加。极化克尔显微镜和磁力显微镜显示,畴密度也增加与粗糙度。对具有周期性调制表面的结构进行的有限元微磁模拟提供了进一步的见解。他们证实了畴密度和粗糙度之间的联系,并确定了畴壁的微观结构作为粗糙薄膜中剩磁增加的来源。模拟预测,畴壁的字符变化从布洛赫类在光滑的薄膜Néel类粗糙的薄膜。

英文摘要:

We investigate the correlation between roughness, remanence and coercivity in Co/Ni films grown on Cu seed layers of varying thickness. Increasing the Cu seed layer thickness of Ta/Cu/8x[Co/Ni] thin films increases the roughness of the films. In-plane magnetization loops show that both the remanance and coercivity increase with increasing seed layer roughness. Polar Kerr microscopy and magnetic force microscopy reveal that the domain density also increases with roughness. Finite element micromagnetic simulations performed on structures with periodically modulated surfaces provide further insight. They confirm the connection between domain density and roughness, and identify the microsocpic structure of the domain walls as the source of the increased remanence in rough films. The simulations predict that the character of the domain walls changes from Bloch-like in smooth films to Néel-like for rougher films.

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