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arXiv 2301.01436cond-mat.mtrl-sci
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过渡金属一碳化物$M_{2}\rm{C}$($M=\rm{V}, \rm{Nb}, \rm{Ta}$)中与层数相关的自旋霍尔效应

Layer-number-dependent spin Hall effects in transition metal monocarbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$)

Xi Zuo, Yulin Feng, Na Liu, Bing Huang, Desheng Liu, Bin Cui

摘要:

二维层状拓扑半金属中强自旋霍尔效应(SHE)的发现,由于其奇异的电子性质和在自旋电子器件中的潜在应用,引起了人们的广泛关注。本文系统地研究了层状过渡金属碳化物$M_{2}\rm{C}$($M=\rm{V}, \rm{Nb}, \rm{Ta}$)的拓扑性质和本征SHE。结果表明,无论是体相还是单层$M_{2}\rm{C}$,都存在由费米能级附近的$d$带交叉($E_F$)产生的受保护的节点(NP)和线(NL). SOC的包含打破了NL和NP的简并性,有助于大的自旋霍尔电导率(SHC),对于体和单层Ta $_{2}$ C,分别高达$\sim$ 1100和$\sim$ 200 $(\hbar / e)(Ω\mathrm{cm})^{-1}$。值得注意的是,我们发现,SHC的幅度表现出显着的增强,通过增加层数。对于八层Ta $_{2}$ C,SHC的最大值可达$\sim$ 600 $(\hbar / e)(Ω\mathrm{cm})^{-1}$,与许多已报道的3D拓扑材料相当。自旋Berry曲率的分析表明,大的SHC起源于$E_F$附近的层数依赖的节线结构,其中价带和导带之间的重复交叉沿着$Γ\rm{-K}$路线产生了大量的NP。这不仅为低维SHE的实验研究提供了一个新的平台,而且为通过控制层厚实现巨SHE提供了一条有效的途径。

英文摘要:

The recent discovery of strong spin Hall effects (SHE) in 2D layered topological semimetals has attracted intensive attention due to its exotic electronic properties and potential applications in spintronic devices. In this paper, we systematically study the topological properties and intrinsic SHE of layered transition metal carbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$). The results show that both bulk and monolayer $M_{2}\rm{C}$ have symmetry-protected nodal points (NPs) and lines (NLs) originating from the $d$ band crossing near the Fermi level ($E_F$). The inclusion of SOC breaks the degeneracy of NLs and NPs, contributing to large spin Hall conductivity (SHC) up to $\sim$1100 and $\sim$200 $(\hbar / e)(Ω\mathrm{cm})^{-1}$ for bulk and monolayer Ta$_{2}$C, respectively. Remarkably, we find that magnitude of SHC exhibits a significant enhancement by increasing the layer number. For eight-layer Ta$_{2}$C, the maximum value of SHC can reach up to $\sim$600 $(\hbar / e)(Ω\mathrm{cm})^{-1}$, comparable to many reported 3D topological materials. Analysis of spin Berry curvature reveals that the large SHC originates from layer-number-dependent nodal line structure near the $E_F$, in which the repeated crossover between valence and conduction bands creates large amounts of NPs along the $Γ\rm{-K}$ route. Our findings not only provide a new platform for experimental research of low-dimensional SHE, but also suggest an effective way of realizing giant SHE by controlling layer thickness.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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