Spin currents in ferromagnets afford diverse functionalities. We evaluate the extrinsic spin Hall effects of magnetic impurity scattering in ferromagnetic metals. We show that spin-dependent scattering can provide a high spin current polarized perpendicularly to the magnetization direction and is a dominant mechanism in the moderate-conductivity regime. We find that the superposition of the spin-conserve and spin-flip channels causes the spin currents. These findings suggest that optimizing alloy composition is an effective strategy to control the spin Hall effect.
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without …
Stripe states in multilayer systems with perpendicular polarization are investigated by analytical calculations within a general continuum approach, applicable to ferromagnetic, ferroelectric, or ferroelastic nanoscale superlattices. The competition between the long-range depolarization effect and short-range interlayer couplings can stabilize monodomain states and unusual stripe phase ground states with antiparallel polarization in adjacent layers. Geometric parameters of stable stripe domain states and the phase transitions lines between single domain states, aligned and antialigned stripe s…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large $J >0$ the switching fields are essentially independent of $J$ but the frequen…
Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-damping torque, which is not allowed in conventional spin source materials such as heavy metals (HM) and topological insulators due to the system's symmetry. The exploitation of low-crystal symmetries in…
Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta alloys. We show that the exchange coupling depends exponentially on spacer thickness and scales with the Fe-Ta susceptibility, which can be tuned via the alloy composition and/or temperature. Such materials are of high interest for the engineering of perpendicularly magnetized CoFeB-MgO based tunnel junctions as it enables ferromagnetic coupling of magnetic…
We study how the shape of the spinwave resonance lines in rf-voltage induced FMR can be used to extract the spinwave density of states and the damping within the precessing layer in nanoscale tunnel junctions that possess perpendicular anisotropy. We work with a field applied along the easy axis to preserve the uniaxial symmetry of the system. We describe the set-up to study the susceptibility contributions of the spin waves in the field-frequency space. We then identify the maximum device size above which the spinwaves can no longer be studied in isolation as the linewidths of their responses…
Buckminsterfullerene (C60) can exhibit ferromagnetism at the interface (called as a spinterface) when it is placed next to a ferromagnet (FM). Formation of such spinterface happens due to orbital hybridization and spin polarized charge transfer at the interface. The spinterface can influence the domain size and dynamics of the organic/ferromagnetic heterostructure. Here, we have performed magnetic domain imaging and studied the relaxation dynamics in Pt/Co/C60/Pt system with perpendicular anisotropy. We have compared the results with its parent Pt/Co/Pt system. It is observed that presence of …
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study…
A study of the multilayer system MgO/CoFeB(1.1nm)/Ta($t$)/CoFeB(0.8nm)/MgO is presented, where the two CoFeB layers are separated by a Ta interlayer of varying thickness $t$. The magnetization properties deduced from complementary techniques such as superconducting quantum interference magnetometry, ferromagnetic resonance frequency measurements and Brillouin light scattering spectroscopy can be tuned by changing the Ta thickness between $t$=0.25 nm, 0.5 nm and 0.75 nm. For $t$=0.5 nm, a ferromagnetic coupling is observed, whereas for t=0.75 nm, the antiferromagnetic coupling needed to constru…
Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains
University of Leeds（利兹大学）；ISIS Neutron and Muon Source, STFC Rutherford Appleton Laboratory（STFC卢瑟福阿普尔顿实验室中子与μ子源）；Diamond Light Source（钻石光源）；Imperial College London（伦敦帝国理工学院）
We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO capping layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dampinglike spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/MgO magnetic heterostructures with perpendicular magnetic anisotropy are characterized. We find that though Ta has a significant spin Hall effect, the DL-SOT efficiencies are small in systems with the…
We analyze the electric current and magnetic field driven domain wall motion in perpendicularly magnetized ultrathin ferromagnetic films in the presence of interfacial Dzyaloshinskii-Moriya interaction and both out-of-plane and in-plane uniaxial anisotropies. We obtain exact analytical Walker-type solutions in the form of one-dimensional domain walls moving with constant velocity due to both spin-transfer torques and out-of-plane magnetic field. These solutions are embedded into a larger family of propagating solutions found numerically. Within the considered model, we find the dependencies of…
We investigate the effect of low-coordinated surface atoms on the defect-induced magnetism in MgO nanocrystallites using hybrid density functional theory calculations. It has been demonstrated that when Mg vacancies are introduced at the corners of cube-like MgO clusters, a magnetic state becomes lower in total energy than the nonmagnetic singlet state by 1-2 eV, resulting in the spin-polarized ground state. The spin density is not only located at the surrounding O atoms neighbor to the corner Mg vacancy site but is also extended to the distant (1 nm or longer) low-coordinated surface O atoms …
A nonlinear model of spin wave excitation using a point contact in a thin ferromagnetic film is introduced. Large-amplitude magnetic solitary waves are computed, which help explain recent spin-torque experiments. Numerical simulations of the fully nonlinear model predict excitation frequencies in excess of 0.2 THz for contact diameters smaller than 6 nm. Simulations also predict a saturation and red shift of the frequency at currents large enough to invert the magnetization under the point contact. The theory is approximated by a cubic complex Ginzburg-Landau type equation. The mode's nonlinea…
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results …
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and Wannier-function-based tight-binding (WFTB) model, we reveal that valley-based Hall effects and especially the VQAHE induced by external magnetic fields can occur in two-dimensional (2D) ferromagnetic van der Waals heterostructures (vdWHs). The results show that considerable valley-splitting derived from the Zeeman exchange energy drives these vdWHs generating the valley an…
Applying electric or magnetic fields is widely used to not only create and manipulate topological states but also facilitate their observations in experiments. In this work, we show by first-principles calculations and topological analysis that the time-reversal (TR) symmetry-broken quantum spin Hall (QSH) state emerges in a two-dimensional ferromagnetic MnBi$_4$Te$_7$ monolayer. This TR-symmetry broken QSH phase possesses a highly tunable nontrivial band gap under an external electric field (or tuning interlayer distance). Furthermore, based on the Wannier-function-based tight-binding approac…
For spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the intrinsic relation between the number of paths and conduction, and to enhance the magnetoresistance (MR) ratio. When many paths are randomly located between the two FMs, electronic wave interference between the FMs appears, and then the MR ratio increases with increasing number of paths. Furthermore, at each number of paths, the MR ratio for carbon nanotubes b…
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to l…
For the first time magnetrotransport of the ferromagnetic high-pressure phases of (GaSb)$_2$M (M=Cr,Mn) was measured. It was found that the main component of magnetotransport in these phases is negative and its amplitude is increasing with temperature rising and approaching Curie temperature. Measuring of magnetoresistance in the cycling magnetic fields demonstrated that the Yosida component of magnetresistance is negligible and the main part of the magnetoresistance can be attributed to the spin-polarized electron transport.
The Y3Fe5O12 (YIG) films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. Here, we report the induced PMA in the ultrathin YIG films grown on (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12 (SGGG) substrates by epitaxial strain without preprocessing. Reciprocal space mapping shows that the films are lattice-matched to the substrates without strain relaxation. Through ferromagnetic resonance and polarized neutron reflectometry measurements, we find that these YIG films have ultra-low Gilbert damping constant with a magnetic dead lay…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.
Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic semiconductors is still just an appealing idea that has never been realized in practice up to now. Here we demonstrate that graphene monolayer, hybridized with underlying Ni(111) substrate, is the room-temperature ferromagnetic semiconductor that has been continuously searched for decades. Our spin-polarized scanning tunnelling microscopy (STM) experiments, complemented…
Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te…
We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to rea…
Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often lead to the detection of parasitic magnetic contributions or spurious effects. In this work, we report a new magnetic microscopy technique based on the combination of magnetic circular dichroism and S…
The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement would be to develop ultrafast spintronics using femtosecond laser pulses. Employing terahertz (10$^{12}$ Hz) emission spectroscopy, we demonstrate optical generation of spin-polarized electric currents at the interfaces of metallic ferromagnetic heterostructures at the femtosecond timescale. The direction of the photocurrent is controlled by the helicity of th…
Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of the spin energy subbands. Spin injection depends strongly on the direction of the current (forward or backward). We prepared experimentally a rod-to-film structure and investigated high density current flowing through it. Current dependent radiation has been observed by means of a THz receiver. In particular, the radiation becomes different for forward and b…
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a strained multiaxial ferroelectric film. The rotation and value of polarization vector are controlled by a misfit strain. We proposed a phenomenological model, which takes into account the shift of the Dirac point due to the proximity of ferromagnetic insulator and uses the Landauer formula for the conductivity of the graphene channel. We derived analytical expressi…
Time-resolved imaging reveals that the helicity dependent all-optical switching (HD-AOS) of Co/Pt ferromagnetic multilayers proceeds by two stages. First one involves the helicity independent and stochastic nucleation of reversed magnetic domains. At the second stage circularly polarized light breaks the degeneracy between the magnetic domains and promotes the preferred direction of domain wall (DW) motion. The growth of the reversed domain from the nucleation cite, for a particular helicity, leads to full magnetic reversal. This study demonstrates a novel mechanism of HD-AOS mediated by the d…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode at room temperature. This fact shows that a spin-injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1 % at room temperature.
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monolayer under linearly polarized excitation. This build-up of circular polarization can reach a measured value of about 4% when the magnetization of Ni is saturated perpendicularly to the sample plane, and changes its sign when the magnetization is reversed. The circular polarization decreases when the hBN barrier thickness increases. These results ar…
Current-induced dynamics of twisted domain walls and skyrmions in ferromagnetic perpendicularly magnetized multilayers is studied through three-dimensional micromagnetic simulations and analytical modeling. It is shown that such systems generally exhibit a Walker breakdown-like phenomenon in the presence of current-induced damping-like spin-orbit torque. Above a critical current threshold, corresponding to typical velocities of the order tens of m/s, domain walls in some layers start to precess with frequencies in the gigahertz regime, which leads to oscillatory motion and a significant drop i…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias …
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an external magnetic field. Under current flowing, a nonequilibrium spin polarization appears in the free layer. The interaction between the injected spins and the lattice leads to instability of the antiparallel orientation at the high enough current density and to switching the free layer to a state with magnetization parallel to one in the pinned layer. If t…
Weyl semimetals are characterized by the presence of massless band dispersion in momentum space. When a Weyl semimetal meets magnetism, large anomalous transport properties emerge as a consequence of its topological nature. Here, using $in-situ$ spin- and angle-resolved photoelectron spectroscopy combined with $ab\ initio$ calculations, we visualize the spin-polarized Weyl cone and flat-band surface states of ferromagnetic Co$_2$MnGa films with full remanent magnetization. We demonstrate that the anomalous Hall and Nernst conductivities systematically grow when the magnetization-induced massiv…
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn ystem. We show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come …
We determined the bulk electronic structure in the prototypical Heusler compound Cu$_2$MnAl by measuring the Angular Correlation of Annihilation Radiation (2D-ACAR) using spin-polarized positrons. To this end, a new algorithm for reconstructing 3D densities from projections is introduced that allows us to corroborate the excellent agreement between our electronic structure calculations and the experimental data. The contribution of each individual Fermi surface sheet to the magnetization was identified, and summed to a total spin magnetic moment of $3.6\,\pm\,0.5\,μ_B/\mathrm{f.u.}$.
A spin-polarized triplet metastable helium (He*) beam has been used as a probe for surface magnetism, but changes in the spin state during scattering from a surface remain unclear. In the present study, we explored this issue by constructing an apparatus that allows us to direct a spin-polarized He* beam to a surface and measure the spin polarization of He* scattered from the surface. Magnetic hexapoles were used for both the beam polarization and the spin analysis. The results of the spin-dependent He* scattering experiments on clean Fe$_3$O$_4$(100), H-terminated Fe$_3$O$_4$(100), benzene-ad…
We theoretically investigate the local density of states (LDOS) probed by a STM tip of ferromagnetic metals hosting a single adatom and a subsurface impurity. We model the system via the two-impurity Anderson Hamiltonian. By using the equation of motion with the relevant Green functions, we derive analytical expressions for the LDOS of two host types: a surface and a quantum wire. The LDOS reveals Friedel-like oscillations and Fano interference as a function of the STM tip position. These oscillations strongly depend on the host dimension. Interestingly, we find that the spin-dependent Fermi w…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in anti-ferromagnetic non-collinear spin valves and domain walls. We report a first principles study on the electronic transport properties of anti-ferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to mea…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient perpendicular magnetic anisotropy (PMA) devices. A promising alternative switching mechanism employs spin-orbit torques and the spin-Hall effect (SHE) in particular, but additional symmetry breaking is required to achieve deterministic switching in PMA devices. Currently used methods rely on in-plane magnetic fields or anisotropy gradients, which are not suitable for …
The magnetoresistance (MR) in polycrystalline colossal magnetoresistive compounds follows a behavior different from single crystals below the ferromagnetic transition temperature. This difference is usually attributed to spin polarized tunneling at the grain boundaries of the polycrystalline sample. Here we derive a theoretical expression for the contribution of spin polarized tunneling to the magnetoresistance in granular ferromagnetic systems under the mean field approximation. We apply this model to our experimental data on the half metallic ferromagnet La0.7Sr0.3MnO3, and find that the the…
Magnetic topological quantum materials have attracted great attention due to their exotic topological quantum physics induced by the interplay among crystalology, magnetism, and topology, which is of profound importance to fundamental research and technology applications. However, limited materials are experimentally available, most of whom are realized by magnetic impurity doping or heterostructural constructions. In this work, based on the first-principles calculations, we predict that double perovskite Ba2CdReO6 is an intrinsic ferromagnetic topological semi-half-metal, while the ferrimagne…
This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena. Here a critical discussion of domain-wall scattering is given. Results on surfacial and interfacial magnetism in oxides are presented. Spin-polarized tunnelling in ferromagnetic junctions is reviewed and grain-boundary magnetoresistance is interpreted within a model of spin-polarized tunnelling through natural oxide barriers. The situation in ferromagnetic o…
The ferromagnetic phase in La0.7Sr0.3MnO3 manganite is completely spin polarized (100%) at room temperature. This is demonstrated on high quality epitaxial films by Spin-Polarized Scanning Tunneling Microscopy. The films consist of a highly homogeneous ferromagnetic (FM) phase in which minority paramagnetic (PM) defects are embedded (less than 1% for best films). PM defects exhibit featureless tunneling spectroscopic characteristics and an insulating-like conductance. FM phase exhibit metallic behavior and strongly nonlinear characteristics. Deconvolution of the spectroscopic curves for the FM…
It is important to spintronics to achieve fully-spin-polarized magnetic materials that are stable and can be easily fabricated. Here, through systematical density-functional-theory investigations, we achieve high and even full spin polarization for carriers in the ground-state phase of CrTe by applying tensile biaxial stress. The resulting strain is tensile in the xy plane and compressive in the z axis. With the in-plane tensile strain increasing, the ferromagnetic order is stable against antiferromagnetic fluctuations, and a half-metallic ferromagnetism is achieved at an in-plane strain of 4.…
The dispersion law of transverse spin waves known in the Stoner-Hubbard model of itinerant ferromagnetism corresponds to that is well known in more broder and well controlled approach of Fermi-liquid theory. Making use the quantum-field theoretical approach we derive the dispersion law for the transverse spin waves in a weakly polarized Fermi liquid at T=0. Along with the dissipationless part inversely proportional to the polarization it contains also the finite zero-temperature damping. It is shown that similar derivation for "ferromagnetic Fermi liquid" taking into consideration the divergen…
Optomagnetic non-thermal modification of the ferromagnetic resonance
Russian Quantum Center（俄罗斯量子中心）；Moscow Institute of Physics and Technology（莫斯科物理技术学院）；Lomonosov Moscow State University（莫斯科罗蒙诺索夫国立大学）；Prokhorov General Physics Institute of the Russian Academy of Sciences（俄罗斯科学院普罗霍洛夫普通物理研究所）；Shanghai University（上海大学）
Using the density-functional-theory based electronic structure calculations, we study the electronic state of recently discovered mixed-valent manganese oxides $A$Mg$_4$Mn$_6$O$_{15}$ ($A=$ K, Rb, Cs), which are fully spin-polarized ferromagnetic insulators with a cubic crystal structure. We show that the system may be described as a three-dimensional arrangement of the one-dimensional chains of a $2p$ orbital of O and a $3d$ orbital of Mn running along the three axes of the cubic lattice. We thereby argue that in the ground state the chains are fully spin polarized due to the double-exchange …
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.
In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; that is, (up,up), (up,down), (down,up), (down,down). To obtain such 4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions, where the FM1 and FM2 are different ferromagnets, and the barrier has spin dependence. The proposed idea is applied to the case of the b…
A heavy-mass electron state is realized in a doped valence bond solid (Ti1-xVx)2O3. In this system, itinerant holes mediate the mainly ferromagnetic RKKY interaction between the localized magnetic moments and become readily spin-polarized under a magnetic field, while showing large negative magnetoresistance. In spite of the ferromagnetic interaction among the carriers, their effective mass is found to be 1 or 2 orders of magnitude larger than that of usual doped semiconductors. Such strong mass renormalization is ascribable to the polaron formation on the Ti-dimer, where the spin-singlet stat…
