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arXiv 2209.04898physics.opticsphysics.app-ph
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采用单次连续光刻工艺在薄膜锂酸盐上制作单片集成有源无源波导阵列

Monolithically integrated active passive waveguide array fabricated on thin film lithium niobate using a single continuous photolithography process

Yuan Zhou, Yiran Zhu, Zhiwei Fang, Shupeng Yu, Ting Huang, Junxia Zhou, Rongbo Wu, Jian Liu, Yu Ma, Zhe Wang, Jianping Yu, Zhaoxiang Liu, Haisu Zhang, Zhenhua W… 展开作者

Yuan Zhou, Yiran Zhu, Zhiwei Fang, Shupeng Yu, Ting Huang, Junxia Zhou, Rongbo Wu, Jian Liu, Yu Ma, Zhe Wang, Jianping Yu, Zhaoxiang Liu, Haisu Zhang, Zhenhua Wang, Min Wang, Ya Cheng

摘要:

我们通过平铺无源(即,不掺杂活性离子)薄膜锂酸盐(TFLN)和活性(即,掺杂有稀土离子)TFLN衬底,用于无源/有源锂酸盐光子学的单片集成。由有源区和无源区组成的平铺衬底允许使用单个连续光刻工艺一次图案化集成有源无源光子器件的掩模。实验测得平铺基板的界面损耗低至0.26dB。由于这种方法所提供的稳定性,四通道波导放大器以简单的方式实现,其在1550 nm波长处显示出~5 dB的净增益,在1530 nm波长处显示出~8 dB的净增益。用于无源/有源光子集成的鲁棒低损耗光接口将促进需要片上光源和放大器的大规模高性能光子器件。

英文摘要:

We demonstrate a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of passive/active lithium niobate photonics. The tiled substrates composed of both active and passive areas allow to pattern the mask of the integrated active passive photonic device at once using a single continuous photolithography process. The interface loss of tiled substrate is measured as low as 0.26 dB. Thanks to the stability provided by this approach, a four-channel waveguide amplifier is realized in a straightforward manner, which shows a net gain of ~5 dB at 1550-nm wavelength and that of ~8 dB at 1530-nm wavelength for each channel. The robust low-loss optical interface for passive/active photonic integration will facilitate large-scale high performance photonic devices which require on-chip light sources and amplifiers.

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