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arXiv 2202.10271physics.ins-det
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用于HL-LHC ATLAS探测器的抗辐射3D硅像素传感器

Radiation Hard 3D Silicon Pixel Sensors for use in the ATLAS Detector at the HL-LHC

Andreas Løkken Heggelund, Simon Huiberts, Ole Dorholt, Alexander Lincoln Read, Ole Røhne, Heidi Sandaker, Magne Lauritzen, Bjarne Stugu, Angela Kok, Ozhan Koyba… 展开作者

Andreas Løkken Heggelund, Simon Huiberts, Ole Dorholt, Alexander Lincoln Read, Ole Røhne, Heidi Sandaker, Magne Lauritzen, Bjarne Stugu, Angela Kok, Ozhan Koybasi, Marco Povoli, Marco Bomben, Jörn Lange, Andre Rummler

摘要:

高亮度LHC(HL-LHC)升级需要ATLAS探测器的计划内跟踪器(ITk)能够承受极高的辐射剂量。具体地,像素系统的最里面的部分将必须承受高于$1\times10^{16}$ $n_{eq}cm^{-2}$的辐射通量。与传统的平面像素传感器相比,新型3D硅像素传感器提供了优异的辐射耐受性,因此是ITk最内部部分的优秀候选者。本文介绍了三维像素传感器的像素大小$50 \times 50$ $μm^2$安装在RD 53 A原型读出芯片的研究。设计和制造步骤的描述之后,测试光束的结果,以及严重辐照的传感器。对于垂直入射通过的粒子,当偏置到80 $V$时,暴露于$1\times10^{16}$ $n_{eq}cm^{-2}$注量的传感器的平均效率达到96%以上。

英文摘要:

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above $1\times10^{16}$ $n_{eq}cm^{-2}$. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size $50 \times 50$ $μm^2$ mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of $1\times10^{16}$ $n_{eq}cm^{-2}$ when biased to 80 $V$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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