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arXiv 1310.5752physics.ins-det
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用于ATLAS高亮度升级的p型衬底上无边缘硅像素传感器的研制

Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

G. Calderini, A. Bagolini, M. Bomben, M. Boscardin, L. Bosisio, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchiori, N. Zorzi

摘要:

鉴于LHC的高亮度阶段(HL-LHC)升级,ATLAS实验计划用全硅系统取代内部探测器。n-in-p块体技术代表了大多数层的模块的有效解决方案,考虑到该选项的显著抗辐射性和降低的成本。仪表外层所需的大面积将需要平铺传感器,每个传感器边界处的低效区域需要减小到最小尺寸的解决方案。本文报道了ATLAS LPNHE巴黎集团和FBK Trento的一个联合研发项目,该项目基于FTK提供的深沟槽工艺,设计了一种新型的n-in-p无边平面像素。

英文摘要:

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FTK.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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