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arXiv 1609.02128physics.ins-dethep-ex
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用于ATLAS高亮度升级的p型衬底上的无边缘硅像素传感器的性能

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Marco Bomben, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Audrey Ducourthial, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi

摘要:

鉴于LHC向高亮度LHC(HL-LHC)的升级阶段,ATLAS实验计划用全硅系统升级内部探测器。由于n-on-p硅技术具有抗辐射性和成本效益,因此它是实现大面积配备像素传感器的有希望的候选技术。本文报道了FBK-CMM生产的新型n-on-p无边缘平面像素传感器的性能,该传感器利用有源沟槽来减少器件外围的死区。在讨论了传感器技术之后,将给出第一束测试结果的概述。

英文摘要:

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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