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arXiv 1202.3592physics.ins-det
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用于ATLAS可插入B层升级的新型混合像素模块概念的表征

Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

Malte Backhaus

摘要:

ATLAS Insertable B-Layer(IBL)合作计划在现有的像素检测器中插入第四个像素层,以从当前像素系统的最终故障中恢复,特别是b层。此外,IBL将确保LHC第一阶段期间出色的跟踪,顶点和b标记性能,并在高亮度堆积的跟踪中增加鲁棒性。IBL的预期峰值亮度为2至3centerdot 1034 cm-2s-1,IBL的设计积分亮度为700 fb-1。这对应于5centerdot 1015 1 MeV neqcm-2的预期通量和250 MRad的总电离剂量。为了满足这些要求,两个新的模块概念正在研究中,都基于一个新的前端IC,称为FE-I4。该IC被设计为未来ATLAS像素探测器的读出芯片,其第一个应用将是IBL。基于平面像素传感器(PPS)的模块概念得益于其易于理解的设计,该设计与当前ATLAS像素检测器传感器的设计尽可能相似。新的三维(3D)硅传感器技术的第二种方法受益于到电极的较短的载流子漂移距离,其完全穿透传感器体。这两个传感器概念的原型模块已经建立和测试在实验室和测试束环境照射前后。这两个概念表现出非常高的性能,即使在照射到5centerdot 1015 1兆电子伏neqcm-2,并满足IBL规格的命中效率大于97%。最低操作阈值的研究已经生效,并证明独立于所使用的传感器概念的FE-I4的模块概念在低阈值的噪声命中占用方面的优异性能。

英文摘要:

The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3centerdot1034 cm-2s-1 and IBL is designed for an integrated luminosity of 700 fb-1. This corresponds to an expected fluence of 5centerdot1015 1 MeV neqcm-2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design of the current ATLAS Pixel Detector sensor. The second approach of the new three dimensional (3D) silicon sensor technology benefits from the shorter charge carrier drift distance to the electrodes, which completely penetrate the sensor bulk. Prototype modules of both sensor concepts have been build and tested in laboratory and test beam environment before and after irradiation. Both concepts show very high performance even after irradiation to 5centerdot1015 1 MeV neqcm-2 and meet the IBL specifications in terms of hit efficiency being larger than 97%. Lowest operational threshold studies have been effected and prove independent of the used sensor concept the excellent performance of FE-I4 based module concepts in terms of noise hit occupancy at low thresholds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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