Coherent dynamics of a single Mn-doped quantum dot revealed by four-wave mixing spectroscopy
University of Warsaw（华沙大学）
Jacek Kasprzak, Daniel Wigger, Thilo Hahn, Tomasz Jakubczyk, Łukasz Zinkiewicz, Paweł Machnikowski, Tilmann Kuhn, Jean-François Motte, Wojciech Pacuski
For future quantum technologies the combination of a long quantum state lifetime and an efficient interface with external optical excitation are required. In solids, the former is for example achieved by individual spins, while the latter is found in semiconducting artificial atoms combined with modern photonic structures. One possible combination of the two aspects is reached by doping a single quantum dot, providing a strong excitonic dipole, with a magnetic ion, that incorporates a characteristic spin texture. Here, we perform four-wave mixing spectroscopy to study the system's quantum coherence properties. We characterize the optical properties of the undoped CdTe quantum dot and find a strong photon echo formation which demonstrates a significant inhomogeneous spectral broadening. Incorporating the Mn$^{2+}$ ion introduces its spin-5/2 texture to the optical spectra via the exchange interaction, manifesting as six individual spectral lines in the coherent response. The random flips of the Mn-spin result in a special type of spectral wandering between the six transition energies, which is fundamentally different from the quasi-continuous spectral wandering that results in the Gaussian inhomogeneous broadening. Here, the discrete spin-ensemble manifests in additional dephasing and oscillation dynamics.
Transmission and reflection of an electromagnetic pulse through a dielectric slab doped with the quantum dot molecules is investigated. It is shown that the transmitted and reflected pulses depend on the inter-dot tunneling effect and can be controlled by applying a gate voltage.
Spin relaxation of electrons doped in InP quantum dots was studied by means of luminescence pump-probe and Hanle measurements. Optical pumping makes spins of doped electrons to be oriented in parallel to the helicity of the circularly polarized excitation. The luminescence pump-probe showed the spin orientation of the doped electrons decay on a millisecond time-scale. Hanle measurement clarified the spin dephasing relaxation time of doped electrons is 1.7 ns which is explained by the frozen fluctuation of nuclear spins.
The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom and the acceptor hole. Our model permits to link the photoluminescence spectra to the Mn spin states after photon emission. We focus on the relation between the charge state of the Mn, $A^0$ or $A^-$, and the different spectra which result through either band-to-band or band-to-acceptor transitions. We consider both neutral and negatively charged dots. Our model is able…
We report on the observation of spin dependent optically dressed states and optical Stark effect on an individual Mn spin in a semiconductor quantum dot. The vacuum-to-exciton or the exciton-to-biexciton transitions in a Mn-doped quantum dot are optically dressed by a strong laser field and the resulting spectral signature is measured in photoluminescence. We demonstrate that the energy of any spin state of a Mn atom can be independently tuned using the optical Stark effect induced by a control laser. High resolution spectroscopy reveals a power, polarization and detuning dependent Autler-Town…
The notion of artifical atom relies on the capability to change the number of carriers one by one in semiconductor quantum dots, and the resulting changes in their electronic structure. Organic molecules with transition metal atoms that have a net magnetic moment and display hysteretic behaviour are known as single molecule magnets (SMM). The fabrication of CdTe quantum dots chemically doped with a controlled number of Mn atoms and with a number of carriers controlled either electrically or optically paves the way towards a new concept in nanomagnetism: the artificial single molecule magnet. H…
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.
Rare-earth ions doped crystals are of great significance for micro-sensing and quantum information, whilst the ions in the crystals emit light with spontaneous partial polarization, which is, though believed to be originated from the crystal lattice structure, still lacking a deterministic explanation that can be tested with quantitative accuracy. We report the experimental evidence showing the profound physical relation between the polarization degree of light emitted by the doped ion and the lattice symmetry, by demonstrating, with unprecedented precision, that the lattice constant ratio c/a…
A new generalised group-theoretical approach, based on master Maxwell-pseudospin equations, is proposed to explain recently observed enhanced circular dichroism in the excited state emission from p-doped quantum dot ensembles under resonant circularly polarised excitation into hot trion states, herein referred to as "spin-filtering effect". The theory agrees remarkably well with polarised time-resolved photoluminescence experiments, yielding largely unknown inter- and intra-shell spin relaxation time scales. This approach allows to predict optimum pulse parameters for control of spin dynamics,…
Doping a semiconductor quantum dot with just a single impurity atom can completely transform its physical properties. Here, we report and analyze the magnetic circular dichroism (MCD) spectra of colloidal CdSe quantum dot samples containing on average fewer than one Mn2+ per quantum dot. Even at this sub-single-dopant level, the low-temperature low-field data are dominated by impurity-induced Zeeman splittings caused by dopant-carrier sp-d exchange. Unlike in more heavily doped quantum dots, however, the MCD intensity at the first CdSe exciton shows a field-induced sign flip as the field stren…
Carrier-dopant exchange interactions in Mn-doped PbS colloidal quantum dots were studied by circularly polarized magneto-photoluminescence. Mn substitutional doping leads to paramagnetic behavior down to 5 K. While undoped quantum dots show negative circular polarization, Mn doping changes its sign to positive. A circular polarization value of 40% was achieved at T=7 K and B=7 tesla. The results are interpreted in terms of Zeeman splitting of the band edge states in the presence of carrier-dopant exchange interactions that are qualitatively different from the s,p-d exchange interactions in II-…
We have grown high quality p-type δ-doped InAs quantum dots and have demonstrated coherent spin pumping and repumping of a hole spin in a positively charged quantum dot by means of a single-laser driving scheme under a high magnetic field in the Voigt configuration. Modeling of our system shows excellent qualitative agreement with the experimental findings and further explores the performance of the single-laser scheme for spin pumping and re-pumping.
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetica…
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQ…
We demonstrate that longitudinal plasmons in doped monolayer graphene can mediate highly efficient long-range energy transfer between nearby fluorophores, e.g., semiconductor quantum dots. We derive a simple analytical expression for the energy transfer efficiency that incorporates all the essential processes involved. We perform numerical calculations of the transfer efficiency for a pair of PbSe quantum dots near graphene for inter-fluorophore distances of up to 1 $μ$m and find that the plasmon-assisted long-range energy transfer can be enhanced by up to a factor of $\sim10^4$ relative to th…
The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit $(FoM)$, defined as the ratio of the change in absorption $Δα$ for a reverse bias voltage swing to the loss at $1 V$ $α(1 V)$, $FoM=Δα/α(1 V)$. The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping th…
We present a theory for the electronic and magneto-optical properties of spherical quantum dots consisting of an inner core surrounded by an outer shell. This core-shell quantum dot is doped by magnetic Mn impurities all of which are implanted at a preselected radius on a spherical surface within the dot. The spherical symmetry of the dot is broken by the application of an external magnetic field. The electronic states in the presence of a magnetic field are treated in an effective mass model which includes the s-d and p-d exchange interaction with localized Mn d electrons. The strain in the q…
A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrier-phonon couplings is studied by means of a non-perturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond timescale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical exper…
We study theoretically the recently proposed hole spin initialization scheme for $p$-doped quantum well or dot systems via coupling to trion states with sub-picosecond circularly polarized laser pulses. We analyze the efficiency of spin initialization an predict the intrinsic spin coherence loss due to the pulse excitation itself as well as the phonon-induced spin dephasing, both taking place on the timescale of the driving laser pulse. We show that the ratio of the degree of dephasing to the achieved orientation effect does not depend on the pulse area but is sensitive to the temperature and …
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5\,nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime…
We present the magnetic phase diagram of artificial H$_2$ molecule in lateral quantum dots doped with magnetic impurities as a function of external magnetic field and plunger gate voltage. The onset of Mn-Mn antiferromagnetic-ferromagnetic transition follows the electron spin singlet-triplet transition. We deploy a configuration-interaction method to exactly diagonalize the electron-Mn Hamiltonian and map it to an effective Mn-Mn Heisenberg Hamiltonian. We find that Mn-Mn exchange coupling can be described by RKKY-interaction/magnetic-polaron in weak/strong electron-Mn coupling at low/high mag…
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviou…
We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscillators. The electron-electron, electron-hole Coulomb as well as the short-range electron spin-Mn spin and hole spin-Mn spin contact exchange interactions are included. The electronic states of the photo-excited electron-hole-Mn complex and of the final electron-Mn complex are expanded in a finite nu…
We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective spin $J=1$. We find that the spin of an electron photo-created in such a quantum dot can be efficiently oriented by a quasi-resonant circularly-polarized excitation. For the electron spin levels which are made quasi-degenerate by a magnetic field compensating the exchange interaction $Δ_e$ with A$^0$, there is however a full depolarization due the anisotropi…
We investigate theoretically the electron spin states in disk-shaped HgTe topological insulator quantum dots (TIQDs) containing a single magnetic $Mn^{2+}$ ion. We show that the energy spectrum and the electron density distribution of the topological edge states in HgTe TIQD can be modulated significantly by the position of the magnetic $Mn^{2+}$ ion. The numerical results further demonstrate that the electric fields not only tune the spin splittings of edge states via the $\emph{sp-d}$ exchange interaction between the electron (hole) and the magnetic $Mn^{2+}$ ion but also give rise to the br…
The spin dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent experimental results\cite{Le-Gall_PRL_2009,Goryca_PRL_2009,Le-Gall_PRB_2010}show that it is possible to induce Mn spin polarization by means of circularly polarized optical pumping. Pumping is made possible by the faster Mn spin relaxation in the presence of the exciton. Here we discuss different Mn spin relaxation mechanisms. First, Mn-phonon coupling, which is enhanced in the presence of the exciton. Second, phonon-induced hole spin relaxation combined with carrier-Mn spin flip couplin…
Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination removes completely the band bending near the surface and restores initial population of the surface states. Our results indicate the existence of the energy gap 2Δ = 40 \pm 10 meV in intrinsically-populated Si(111)-7x7 surface.
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid- and long-wavelength infrared photodetectors and light-emitting devices, which today employ mostly epitaxial materials. As a recent field of experimental research, thorough studies of the basic properties of intraband transitions in CQDs are still lacking. In this work, we investigate the size and temperature dependence of the intraband transition in heavily …
We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn$^{2+}$ ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn$^{2+}$ spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime…
We study the dynamics of the spin system that consist of a positively charged II-VI semiconductor quantum dot doped with a single Cr$^+$ ion. The resonant photoluminescence (PL) of the positively charged exciton coupled with the Cr$^+$ spin is used to analyze the main spin relaxation channels. The intensity of the resonant PL is reduced by an optical pumping of the spin of the resident hole-Cr$^+$ complex that can be seen as a nano-magnet. The spin memory can be partially erased by a non-resonant optical excitation. This leads to an increase of the resonant PL signal. The resonant PL is co-cir…
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.
The optically induced spin dynamics of a single Mn atom embedded into a single semiconductor quantum dot can be strongly influenced by using the optical Stark effect. The exchange interaction gives rise to simultaneous spin flips between the quantum dot electron and Mn. In the time domain these flips correspond to exchange induced Rabi oscillations, which are typically off-resonant. By applying a detuned laser pulse, the states involved in the flipping can be brought into resonance by means of the optical Stark effect increasing the amplitude of the Rabi oscillations to one. In this paper we s…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.
Light trapping is a crucial mechanism for synchronization in optical communication. Especially on the level of single photons, control of the exact emission time is desirable. In this paper, we theoretically propose a single-photon buffering device composed of a quantum dot doped with a single Mn atom in a cavity. We present a method to detain a single cavity photon as an excitation of the dot. The storage scheme is based on bright to dark exciton conversion performed with an off-resonant external optical field and mediated via a spin-flip with the magnetic ion. The induced Stark shift brings …
Resonant tunneling of electrons between two ferromagnets and a quantum dot in the presence of an externally applied magnetic field reveals a strong gate dependence in the linear and nonlinear bias regime. This gate dependence originates from the interplay between Coulomb interactions and spin-dependent hybridization between the quantum dot and the leads. To take into account Coulomb interaction strengths of the same order of magnitude as the external magnetic field and the hybridization strength we adopt the numerically exact iterative summation of path integrals (ISPI).
We investigate theoretically the spectral and dynamical effects of the short-range exchange interaction between a single manganese (Mn) atom hosted by cylindrical CdTe quantum dots and its light-hole excitons or biexcitons. Our approach is based on the Kohn-Luttinger KP theory and configuration interaction method, the dynamics of the system in the presence of intraband relaxation being derived from the von Neumann-Lindblad equation. The complex structure of the light-hole exciton absorption spectrum reveals the exchange-induced exciton mixing and depends strongly on the Mn position. In particu…
Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped zero-dimensional quantum dots made of semiconductor nanocrystals have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing Stokes-shifted tunable emission in the solar spectrum. However, existing doped colloidal quantum dots suffer from moderately low quantum efficiency and intrinsically small absorption cross-section, which…
We study quantum states of electrons in magnetically doped quantum dots as a function of exchange coupling between electron and impurity spins, the strength of Coulomb interaction, confining potential, and the number of electrons. The magnetic phase diagram of quantum dots, doped with a large number of magnetic Mn impurities, can be described by the energy gap in the spectrum of electrons and the mean field electron-Mn exchange coupling. A competition between these two parameters leads to a transition between spin-unpolarized and spin-polarized states, in the absence of applied magnetic field.…
Plasmonic cavities can confine electromagnetic radiation to deep sub-wavelength regimes. This facilitates strong coupling phenomena to be observed at the limit of individual quantum emitters. Here we report an extensive set of measurements of plasmonic cavities hosting one to a few semiconductor quantum dots. Scattering spectra show Rabi splitting, demonstrating that these devices are close to the strong coupling regime. Using Hanbury Brown and Twiss interferometry, we observe non-classical emission, allowing us to directly determine the number of emitters in each device. Surprising features i…
Magnetic anisotropies in quantum dots (QDs) doped with magnetic ions are discussed in terms of two frameworks: anisotropic $g$-factors and magnetocrystalline anisotropy energy. It is shown that even a simple model of zinc-blende p-doped QDs displays a rich diagram of magnetic anisotropies in the QD parameter space. Tuning the confinement allows to control magnetic easy axes in QDs in ways not available for the better-studied bulk.
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise f…
Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy
Wrocław University of Science and Technology（弗罗茨瓦夫科技大学）；School of Physics, Trinity College Dublin（都柏林三一学院物理学院）；Technische Universität Berlin（柏林工业大学）；Ruhr-Universität Bochum（波鸿鲁尔大学）；Wrocław University of Technology（弗罗茨瓦夫理工大学）；Technische Universität München（慕尼黑工业大学）；Universität Paderborn（帕德博恩大学）；Université Grenoble Alpes（格勒诺布尔阿尔卑斯大学）
We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots (A. Lafuente-Sampietro {\it et al.}, [1]) to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels p…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by obser…
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin r…
We study the full counting statistics of charge transport through a quantum dot tunnel-coupled to one normal and one superconducting lead with a large superconducting gap. As function of the level detuning, there is a crossover from a regime with strong superconducting correlations in the quantum dot to a regime in which the proximity effect on the quantum dot is suppressed. We analyze the current fluctuations of this crossover in the shot-noise regime. In particular, we predict that the full counting statistics changes from Poissonian with charge 2e, typical for Cooper pairs, to Poissonian wi…
We demonstrate the optical addressability of the spin of an individual Chromium atom (Cr) embedded in a semiconductor quantum dot. The emission of Cr-doped quantum dots and their evolution in magnetic field reveal a large magnetic anisotropy of the Cr spin induced by local strain. This results in the zero field splitting of the 0, +-1 and +-2 Cr spin states and in a thermalization on the magnetic ground states 0 and +-1. The observed strong spin to strain coupling of Cr is of particular interest for the development of hybrid spin-mechanical devices where coherent mechanical driving of an indiv…
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots.
Coherent spin dynamics in colloidal CdSe quantum dots (QDs) typically show two spin components with different Larmor frequencies, whose origin is an open question. We exploit the photocharging approach to identify their origin and find that surface states play a key role in the appearance of the spin signals. By controlling the photocharging with electron or hole acceptors, we show that the specific spin component can be enhanced by the choice of acceptor type. In core/shell CdSe/ZnS QDs, the spin signals are significantly weaker. Our results exclude the neutral exciton as the spin origin and …
This work considers a two-dimensional artificial triangular anti-dot lattice (TAL); a semiconductor based artificial crystal hosting Dirac cones, flat bands and Fermi surface nesting. All such single particle features have dramatic implications for the emergent correlated phases. This work predominantly focuses on the existence of a robust flatband and enumerates the possible correlated phases that follow. We find that the flatband is generated, in the single-particle theory, when charges align themselves along a kagome lattice with the same period as the TAL. The correlated phases are studied…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of …
