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arXiv 0907.4726cond-mat.mes-hallcond-mat.mtrl-sci
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磁性杂质掺杂横向量子点中人工H $_2$分子的邻位-准位跃迁

Para-ortho transition of artificial H$_2$ molecule in lateral quantum dots doped with magnetic impurities

Ramin M. Abolfath

摘要:

给出了掺杂磁性杂质的横向量子点中人工H $_2$分子随外磁场和柱塞栅电压变化的磁相图。Mn-Mn反铁磁-铁磁转变的开始是伴随着电子自旋单重态-三重态转变。我们采用组态相互作用方法将电子-Mn哈密顿量精确对角化,并将其映射为有效的Mn-Mn海森堡哈密顿量。我们发现,在低/高磁场下,Mn-Mn交换耦合可以用RKKY相互作用/磁极化子来描述.

英文摘要:

We present the magnetic phase diagram of artificial H$_2$ molecule in lateral quantum dots doped with magnetic impurities as a function of external magnetic field and plunger gate voltage. The onset of Mn-Mn antiferromagnetic-ferromagnetic transition follows the electron spin singlet-triplet transition. We deploy a configuration-interaction method to exactly diagonalize the electron-Mn Hamiltonian and map it to an effective Mn-Mn Heisenberg Hamiltonian. We find that Mn-Mn exchange coupling can be described by RKKY-interaction/magnetic-polaron in weak/strong electron-Mn coupling at low/high magnetic fields.

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