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arXiv 2007.05767cond-mat.mes-hall
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低浓度杂质导电带中电子散射的非玻恩效应

Non-Born effects in scattering of electrons in a conducting strip with low concentration of impurities

N. S. Peshcherenko, A. S. Ioselevich

摘要:

我们扩展了清洁导电管的电阻率$ρ$(在我们以前的工作arXiv:1810.00426开发)的非玻恩效应的理论“条”-准一维结构的二维导体。这里,依赖于化学势$\varepsilon$的位置的$ρ$的原始Van Hove奇点也被不对称地分裂成两个峰以吸引杂质。然而,由于杂质处的散射振幅取决于它们的位置,因此这些峰不均匀地加宽。最强的加宽发生在左峰,产生,吸引杂质,由于在准稳态水平的散射。与管的情况相比,这些能级不是唯一的尖线,而是一个较宽的杂质带,其下边缘具有弱的准范霍夫特征。$ρ(\varepsilon)$的不同部分由不同的杂质群支配:接近最小值的最有效的散射体,矛盾的是“最弱”的杂质--那些位于电子波函数节点附近的杂质,因此裸散射矩阵元被抑制。左侧最大值的准范霍夫特征由最强的杂质主导,位于波腹附近。

英文摘要:

We extend the theory of non-Born effects in resistivity $ρ$ of clean conducting tubes (developed in our previous work arXiv:1810.00426) to ``strips'' -- quasi-one-dimensional structures in 2D conductors. Here also an original Van Hove singularity in dependence of $ρ$ on the position of chemical potential $\varepsilon$ is asymmetrically split in two peaks for attracting impurities. However, since amplitudes of scattering at impurities depend on their positions, these peaks are inhomogeneously broadened. Strongest broadening occurs in the left peak, arising, for attracting impurities, due to scattering at quasistationary levels. In contrast with the case of tube these levels form not a unique sharp line, but a relatively broad impurity band with a weak quasi-Van Hove feature on its lower edge. Different parts of $ρ(\varepsilon)$ are dominated by different groups of impurities: close to the minimum the most effective scatterers, paradoxically are the ``weakest'' impurities -- those, located close to nodes of the electronic wave-function, so that the bare scattering matrix elements are suppressed. The quasi-Van Hove feature at left maximum is dominated by strongest impurites, located close to antinodes.

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