We report the synthesis of single and bi layer graphene films by low pressure chemical vapor deposition technique on Cu and Au substrates. The as grown films were characterized by transmission electron microscopy, scanning electron microscopy and Raman spectroscopy techniques. The large lateral area graphene deposited on Cu can easily be transferred on Si SiO2. In the case of Au substrate both the adsorption and diffusion-precipitation leads to the growth of graphene.
We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues e…
At a single atom thick, it is challenging to distinguish graphene from its substrate using conventional techniques. In this paper we show that friction force microscopy (FFM) is a simple and quick technique for identifying graphene on a range of samples, from growth substrates to rough insulators. We show that FFM is particularly effective for characterising graphene grown on copper where it can correlate the graphene growth to the three-dimensional surface topography and map the crystallographic orientation of the graphene nondestructively, reproducibly and at high resolution. We expect FFM t…
The interaction between graphene and substrates provides a viable routes to enhance functionality of both materials. Depending on the nature of electronic interaction at the interface, the electron band structure of graphene is strongly influenced, allowing us to make use the intrinsic properties of graphene or to design additional functionality in graphene. Here, we present an angle-resolved photoemission study on the interaction between graphene and a platinum substrate. The formation of an interface between graphene and platinum leads to a strong deviation in the electronic structure of gra…
Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Recent advances in chemical vapor deposition (CVD) have led to the batch production of high quality graphene on metal foils. However, further applications are required in the way these graphenes are transferred from their growth substrates onto the target substrate. Here, we report a sublimable carrier method that allows the graphene to be transferred with high quality onto arbitrary substrates, including semiconduc…
The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic devices. The interaction of EG and the SiC substrate is critical to its electronic and physical properties. In this work, Raman spectroscopy was used to study the structure of EG and its interaction with SiC substrate. All the Raman bands of EG blue shift from that of bulk graphite and graphene made by micromechanical cleavage, which was attributed to the compressive strain induced by the substrate. A model containing 13 x…
We demonstrate a simple technique to transfer CVD-grown graphene from copper and platinum substrates using a soak-and-peel delamination technique utilizing only hot deionized water. The lack of chemical etchants results in cleaner CVD graphene films minimizing unintentional doping, as confirmed by Raman and electrical measurements. The process allows the reuse of substrates and hence can enable the use of oriented substrates for growth of higher quality graphene, and is an inherently inexpensive and scalable process for large-area production.
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations. The estimated positions of the Dirac point show that the higher numb…
A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for the top-gate insulator research on graphene as well as the graphene channel research by transferring graphene on SiO2/Si substrates. After adjusting the graphene-growth condition, the surface roughness of the graphene/Cu/mica substrate and the average smooth area are ~0.34 nm and ~100 um2, respectively. The orientation of graphene in the gr…
We report measurements of the electronic structure and surface morphology of exfoliated graphene on an insulating substrate using angle-resolved photoemission and low energy electron diffraction. Our results show that although exfoliated graphene is microscopically corrugated, the valence band retains a massless fermionic dispersion, with a Fermi velocity of ~10^6 m/s. We observe a close relationship between the morphology and electronic structure, which suggests that controlling the interaction between graphene and the supporting substrate is essential for graphene device applications.
We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that controlling the graphene-polymer interface is the key to controlling graphene transfer. Raman spectroscopy an…
Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows expansion of de…
We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.
We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single, bi- and few layer graphene and graphite flakes as with conventional SiO$_2$ substrates. The optical contrast $C$ of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of …
Recent studies on graphene hydrogenation processes showed that hydrogenation occurs via island growing domains, however how the substrate can affect the hydrogenation dynamics and/or pattern formation has not been yet properly investigated. In this work we have addressed these issues through fully atomistic reactive molecular dynamics simulations. We investigated the structural and dynamical aspects of the hydrogenation of graphene membranes (one-side hydrogenation, the so called graphone structure) on different substrates (graphene, few-layers graphene, graphite and platinum). Our results als…
Graphene-metal interface as one of the interesting graphene-based objects attracts much attention from both application and fundamental science points of view. This paper gives a timely review of the recent experimental works on the growth and the electronic properties of the graphene-metal interfaces. This work makes a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic substrate on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies …
In most envisioned applications, full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach towards controlled CNT growth atop graphene substrates where the reaction equilibrium between source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts towards CNT growth rather than graphene consumption. By utilizing C2H4 feedstock, we demonstrate that the low temperature growth permissible with this gas suppresses undes…
Using First-principle calculations, substrate effect of O-terminated (rt3 x rt3) MgO (111) on graphene was investigated for spintronics application. Surprisingly, the graphene can be turned into a spin-polarized semiconductor, which implies that the totally spin-polarized current can be generated and its on/off switching can be also controlled. The origin of the spin-polarized band structure is spin-ordering due to alternative sp2-sp3 covalent bondings induced by the MgO (111) substrate. The results indicate that the tailored pattern of the chemisorption can be highly efficient or introducing …
We investigated properties of heavy rare-gases, Ne, Ar, Kr, Xe and Rn, adsorbed on graphene substrates using molecular dynamics. We gathered evidences of commensurate solids for Ne and Kr adlayers, one of them is given by a typical behavior of the nearest neighbor distance of the adatoms. The specific heat and the melting temperature were calculated and both indicate continuous melting for all heavy noble-gases studied. We also determined the distance between the adlayer and the substrate.
The visibility of graphene sheets on different types of substrates has been investigated both theoretically and experimentally. Although single layer graphene is observable on various types of dielectrics under an optical microscope, it is invisible when it is placed directly on most of the semiconductor and metallic substrates. We show that coating of a resist layer with optimum thickness is an effective way to enhance the contrast of graphene on various types of substrates and makes single layer graphene visible on most semiconductor and metallic substrates. Experiments have been performed t…
One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correction, we systematically investigate for the first time the interfacial properties of bilayer (BLG) and trilayer graphene (TLG) on metal substrates. Three categories of interfacial structures are revealed. The adsorption of B(T)LG on Al, Ag, Cu, Au, and Pt substrates is a weak physisorption, but a band gap can be opened. The adsorption of B(T)LG on Ti, Ni, and Co substrates is a strong chemisorption, and a stacking-in…
In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are ob…
Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of …
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states…
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various interactions between edge-hydrogenated ZGNRs and different SiO2 (0001) surfaces. Bivalent functional groups decorating ZGNRs serve as the bridge between active edges of ZGNRs and SiO2. These functional groups stabilize ZGNRs on substrate, as well as modify the edge states of ZGNRs and further affect their electronic properties. Band gaps are opened owing to edge states…
The hexagonal structure of graphene gives rise to the property of gas impermeability, motivating its investigation for a new application: protection of semiconductor photocathodes in electron accelerators. These materials are extremely susceptible to degradation in efficiency through multiple mechanisms related to contamination from the local imperfect vacuum environment of the host photoinjector. Few-layer graphene has been predicted to permit a modified photoemission response of protected photocathode surfaces, and recent experiments of single-layer graphene on copper have begun to confirm t…
Understanding the adhesion between graphene and other materials is crucial for achieving more reliable graphene-based applications in electronic devices and nanocomposites. The ultra-thin profile of graphene, however, poses significant challenge to direct measurement of its adhesion property using conventional approaches. We show that there is a strong correlation between the morphology of graphene on a compliant substrate with patterned surface and the graphene-substrate adhesion. We establish an analytic model to quantitatively determine such a strong correlation. Results show that, dependin…
Gold is widely used as the substrate material in many graphene devices, due to its superior optoelectronic properties and chemical stability. However, there has been little experimental investigation on the optical contrast of graphene films on Au substrates. Here we report accurate measurement of the optical contrast spectra of few-layer graphene flakes on bulk Au. We used a high-resolution optical microscopy with a 100x magnification objective, accurately determining the thickness of flakes as small as one micrometer in lateral size, which are highly desired in many applications. The results…
High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator b…
Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix (FPDM) dynamics simulations to show that interaction with electric fields and substrates strongly enhance spin relaxation through scattering with phonons. Consequently, the relaxation time at room temperature reduces from microseconds in free-standing graphene to nanoseconds in graphene on hexagonal boron nitride (hBN) substrate, the order of magnitude typic…
Biaxial compression of centimetre-scale graphene, freely standing on the surface of water is studied. Within this platform, we report full stress-strain compression of graphene identifying elastic and plastic deformations. The Young's modulus follows a scaling law and falls two orders of magnitude below the commonly reported values with microscale graphene samples. Such results strongly confirm that graphene - in its very natural form - lacks any intrinsic elastic parameters. Different functionalization/manipulation of graphene lattice affects the mechanics of graphene differently; particularl…
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition simulation enables us to observe the continuous growth process of the multi-ring carbon structure. The annealing simulation reveals the atomistic process by which the multi-ring carbon structure is tr…
We determine the graphene morphology regulated by substrates with herringbone and checkerboard surface corrugations. As the graphene/substrate interfacial bonding energy and the substrate surface roughness vary, the graphene morphology snaps between two distinct states: 1) closely conforming to the substrate and 2) remaining nearly flat on the substrate. Such a snapthrough instability of graphene can potentially lead to desirable electronic properties to enable graphene-based devices.
We report successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave a pathway towards an ultimate goal of encapsulating technologically-relevant photocathodes for accelerator technology with an atomically-thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17 % at ~3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signatur…
The electronic structure of pentacene decorated with dipole groups (d-pentacene) and adsorbed onto a graphene substrate has been studied within the density functional theory. Three reference configurations have been considered, namely the ideal molecule without distortions, the actual molecule including intramolecular distortions and the molecule adsorbed onto graphene. Calculations show a noticeable charge redistribution within the d-pentacene + graphene system due to molecular distortion, as well as the formation of weak $π$-bonds between the molecule and the substrate. Additionally, the eff…
We delineate a general theoretical framework to determine the substrate-regulated graphene morphology through energy minimization. We then apply such a framework to study the graphene morphology on a substrate with periodic surface grooves. Depending on the substrate surface roughness and the graphene-substrate interfacial bonding energy, the equilibrium morphology of graphene ranges from 1) closely conforming to the substrate, to 2) remaining flat on the substrate. Interestingly, in certain cases, the graphene morphology snaps between the above two limiting states. Our quantitative results en…
We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolay…
The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on epitaxial graphene by electron-beam evaporation has the sufficiently large area of contact with the surface of epitaxial graphene for the exfoliation process to take place. We also observed that the exfoliated FLG on the Ti layer can be easily transferred onto a SiO2/Si substrate. In this paper, we have proposed a new technique for transferring graphene having a la…
While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the …
We synthesized three-dimensional nanoporous graphene films by a chemical vapor deposition method with nanoporous copper as a catalytic substrate. The resulting nanoporous graphene has the same average pore size as the underlying copper substrate. Our surface-enhanced Raman scattering (SERS) investigation indicates that the nanoporosity of graphene significantly improves the SERS efficiency of graphene as a substrate as compared to planar graphene substrates.
The substrate temperature required for synthesis of graphene in an arc discharge plasma was studied. It was shown that an increase of copper substrate temperature up to the melting point leads to an increase in the amount of graphene production and the quality of graphene sheets. Favorable range of substrate temperatures for arc-based graphene synthesis was determined, and it is in a relatively narrow range of about 1210-1340 K.
Pentacene has been used widely in organic devices, and the interface structure between pentacene and a substrate is known to significantly influence device performances. Here we demonstrate that molecular ordering of pentacene on graphene depends on the interaction between graphene and its underlying SiC substrate. The adsorption of pentacene molecules on zero-layer and single-layer graphene, which were grown on a Sifaced 6H-SiC(0001) wafer, was studied using scanning tunneling microscopy (STM). Pentacene molecules form a quasi-amorphous layer on zero-layer graphene which interacts strongly wi…
We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show…
Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
We examine thermal transport in graphene supported on SiO2 using molecular dynamics simulations. Coupling to the substrate reduces the thermal conductivity (TC) of supported graphene by an order of magnitude, due to damping of the flexural acoustic (ZA) phonons. However, increasing the strength of the graphene-substrate interaction enhances the TC of supported graphene, contrary to expectations. The enhancement is due to the coupling of graphene ZA modes to the substrate Rayleigh waves, which linearizes the dispersion and increases the group velocity of the hybridized modes. These findings sug…
In this paper, we study the morphologic interaction between graphene and Si nanowires on a SiO2 substrate, using molecular mechanics simulations. Two cases are considered: 1) a graphene nanoribbon intercalated by a single Si nanowire on a SiO2 substrate and 2) a blanket graphene flake intercalated by an array of Si nanowires evenly patterned in parallel on a SiO2 substrate. Various graphene morphologies emerge from the simulation results of these two cases, which are shown to depend on both geometric parameters (e.g., graphene nanoribbon width, nanowire diameter, and nanowire spacing) and mate…
Graphene on a substrate has been shown to exhibit a transition, depending on the substrate material, from a zero-gap semiconductor state to a semimetallic state. The ground-state energy of the electron (hole) gas has been calculated within the random-phase approximation.
It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interaction combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized (hydrogenated or fluorinated) graphene using electron-beam lithography. We also propose that parallelizing a co…
Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a gra…
We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a direct quantitative estimate of the underlying disorder strength for both short-range and long-range disorder in the graphene on h-BN system. We find that the good interface quality between graphene and h-BN leads to strongly suppressed charged impurity scattering compared with the corresponding SiO$_2$ substrate case, thus producing very high mobility for th…
We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial role in interaction of these materials with water, with Pt making both GO and RGO insensitive to humidity variations and change in environment. On the other hand, in the case of Si3N4 substrate a significant difference between GO and RGO with respect to humidity variations is demonstrated, indicating complete water coverage at ~60% R.H for RGO and ~30% R.H.…
We formulate a nonlinear continuum model of a graphene sheet supported by a flat rigid substrate. The sheet is parallel to the substrate and loaded on a pair of opposite edges. A typical cross-section of the sheet is modeled as an elastica. We use elementary techniques from bifurcation theory to investigate how the buckling of the sheet depends on the boundary conditions, the composition of the substrate, and the length of the sheet. We also present numerical results that illustrate snap-buckling of the sheet.
The chemical functionalization of graphene enables control over electronic properties and sensor recognition sites. However, its study is confounded by an unusually strong influence of the underlying substrate. In this paper, we show a stark difference in the rate of electron transfer chemistry with aryl diazonium salts on monolayer graphene supported on a broad range of substrates. Reactions proceed rapidly when graphene is on SiO_2 and Al_2O_3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces. The effect is contrary to expectations based on doping leve…
We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, that exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene, due to the more conventional parabolic band dispersion.
Graphene monolayers supported on oxide substrates have been demonstrated with superior charge mobility and thermal transport for potential device applications. Morphological corrugation can strongly influence the transport properties of the supported graphene. In this paper, we theoretically analyze the morphological stability of a graphene monolayer on an oxide substrate, subject to van der Waals interactions and in-plane mismatch strains. First, we define the equilibrium separation and the interfacial adhesion energy as the two key parameters that characterize the van der Waals interaction b…
We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of …
The graphene morphology regulated by nanowires patterned in parallel on a substrate surface is quantitatively determined using energy minimization. The regulated graphene morphology is shown to be governed by the nanowire diameter, the nanowire spacing and the interfacial bonding energies between the graphene and the underlying nanowires and substrate. We demonstrate two representative regulated graphene morphologies and determine critical values of the nanowire spacing, nanowire diameter and interfacial bonding energies at which graphene switches between the two representative morphologies. I…
Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37,000 cm^2/Vs, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second,…
Covalently functionalizing mechanical exfoliated monolayer and bilayer graphenides with λ-iodanes led to the discovery that the monolayers supported on a SiO2 substrate are considerably more reactive than bilayers as demonstrated by statistical Raman spectroscopy/microscopy. Supported by DFT calculations we show that ditopic addend binding leads to much more stable products than the corresponding monotopic reactions due to much lower lattice strain of the reactions products. The chemical nature of the substrate (graphene versus SiO2) plays a crucial role.14858-14862.
