We propose a quantum gate architecture that allows for the systematic control of the effective exchange interactions between magnetic impurities embedded in nano-scale graphene flakes connected by a gated bridge. The entanglement between the magnetic moment and the edge states of the fragments is used to electrostatically tune the exchange interaction from ferro to antiferromagnetic by merely changing the bridge's carrier density. By characterizing the effects of size and coupling parameters, we explore different operation regimes of this device by means of exact calculations with the density matrix renormalization group (DMRG). We analyze the results utilizing a simplified model that accounts for the main many-body mechanisms. Finally, we discuss how to use arrays of these devices to build quantum simulators for quantum many-body Hamiltonians.
Interaction between adsorbed atoms in graphene is studied using a combination of DFT and the path integral formalism. Our results reveal a complex non-monotonic interaction profile. We show that the strength and sign of the interaction are dictated by the arrangement of impurities, as well as the system doping. These findings can be used to interpret the complex behavior of impurities in experimentally realized systems, as well as other classes of impurities, such as C substitutions in graphene.
Engineered substrates offer a promising avenue towards graphene devices having tunable properties. In particular, topographically patterned substrates can expose unique behavior due to their ability to induce local variations in strain and electrostatic doping. However, to explore the range of possible science and applications, it is important to create topographic substrates which both have tunable features and are suitable for transport measurements. In this Letter we describe the fabrication of tunable, topographically patterned substrates suitable for transport measurements. We report both…
Metal-intercalated graphene on Ir(111) exhibits phonon signatures in inelastic elec- tron tunneling spectroscopy with strengths that depend on the intercalant. Extraor- dinarily strong graphene phonon signals are observed for Cs intercalation. Li interca- lation likewise induces clearly discriminable phonon signatures, albeit less pronounced than observed for Cs. The signal can be finely tuned by the alkali metal coverage and gradually disappears upon increasing the junction conductance from tunneling to con- tact ranges. In contrast to Cs and Li, for Ni-intercalated graphene the phonon signal…
We report on an unconventional mechanism of electron scattering in graphene in hybrid Bose- Fermi systems. We study energy-dependent electron relaxation time, accounting for the processes of emission and absorption of a Bogoliubov excitation (a bogolon). Then using the Bloch-Gruneisen approach, we find the finite-temperature resistivity of graphene and show that its principal behavior is $\sim T^4$ in the limit of low temperatures and linear at high temperatures. We show that bogolon-mediated scattering can surpass the acoustic phonon-assisted relaxation. It can be controlled by the distance b…
We investigate the competition between acoustic-phonon-mediated superconductivity and the long-range Coulomb interaction in moiréless graphene multilayers, specifically, Bernal bilayer graphene, rhombohedral trilayer graphene, and ABCA-stacked tetralayer graphene. In these graphene multilayers, the acoustic phonons can realize, through electron-phonon coupling, both spin-singlet and spin-triplet pairings, and the intra-sublattice pairings ($s$-wave spin-singlet and $f$-wave spin-triplet) are the dominant channels. Our theory naturally explains the distinct recent experimental findings in Berna…
The interfacial coupling between electrons and magnons in adjacent layers can mediate an attractive electron-electron interaction and induce superconductivity. We consider magic-angle twisted bilayer graphene sandwiched between two ferromagnetic insulators to optimize this effect. As a result, magnons induce an interlayer superconducting state characterized by $p$-wave symmetry. We investigate two candidate ferromagnets. The van der Waals ferromagnet CrI$_3$ stands out because it allows compression to tune the superconducting state with an exponential sensitivity. This control adds a new dimen…
We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change the barrier height in time. If such a rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasi-particle
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number $\mathcal C=1$ and $\mathcal{C}= 2$ bands, occur at high temperatures and without the need for an external magnetic field.
The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In parti…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors,…
Transient stimulated emission from multi-split-gated graphene structure
在中红外光谱区，提出了具有多分裂（叉指）顶栅和接地背栅的石墨烯中瞬态布居反转的机制，并对其进行了研究。有效的受激发射后，由于漂移扩散过程中的载流子的快速横向扩展被发现的情况下，缓慢的电子空穴复合在无源区。我们表明，与大的栅极到石墨烯的距离的漂移过程总是先于扩散过程，由于无效的屏蔽面内电场的栅极。对于放置在由顶栅和背栅形成的波导中的单层和多层石墨烯的情况，发现具有高于100 cm $^{-1}$的增益的激光发射的条件。分析了波导损耗和温度效应。
The recent realization of a coherent interface between a single electron in a silicon quantum dot and a single photon trapped in a superconducting cavity opens the way for implementing photon-mediated two-qubit entangling gates. In order to couple a spin to the cavity electric field some type of spin-charge hybridization is needed, which impacts spin control and coherence. In this work we propose a cavity-mediated two-qubit gate and calculate cavity-mediated entangling gate fidelities in the dispersive regime, accounting for errors due to the spin-charge hybridization, as well as photon- and p…
The influence of substrate steps on the bottom-up synthesis of atomically precise graphene nanoribbons (GNRs) on an Au(111) surface is investigated. A straight surface step is found to promote the assembly of long and compact arrays of polymers with enhanced interchain pi-pi stacking interaction, which creates a steric hindrance effect on cyclodehydrogenation to suppress the H passivation of polymer ends. The modified two-stage growth process results in periodic arrays of GNRs with doubled average length near step edges.
We introduce a method of local gating for van der Waals heterostructures, employing a few-layer graphene patterned bottom gate. Being a member of the 2D material family, few-layer graphene adapts perfectly to the commonly used stacking method. Its versatility regarding patterning as well as its flatness make it an ideal candidate for experiments on locally gated 2D materials. Moreover, in combination with ultra-thin hexagonal boron nitride as an insulating layer, sharp potential steps can be created and the quality of the investigated 2D material can be sustained. To underline the good feasibi…
Motivated by the observation of two distinct superconducting phases in the moiréless ABC-stacked rhombohedral trilayer graphene, we investigate the electron-acoustic-phonon coupling as a possible pairing mechanism. We predict the existence of superconductivity with the highest $T_c\sim 3$K near the Van Hove singularity. Away from the Van Hove singularity, $T_c$ remains finite in a wide range of doping. In our model, the $s$-wave spin-singlet and $f$-wave spin-triplet pairings yield the same $T_c$, while other pairing states have negligible $T_c$. Our theory provides a simple explanation for th…
In order to realize applications of hydrogen-adsorbed graphene, a main issue is how to control hydrogen adsorption/desorption at room temperature. In this study, we demonstrate the possibility to tune hydrogen adsorption on graphene by applying a gate voltage. The influence of the gate voltage on graphene and its hydrogen adsorption properties was investigated by electrical transport measurements, scanning tunneling microscopy, and density functional theory calculations. We show that more hydrogen adsorbs on graphene with negative gate voltage (p-type doping), compared to that without gate vol…
We present a systematic theory of acoustic-phonon-mediated superconductivity, which incorporates Coulomb repulsion, explaining the recent experiment in Bernal bilayer graphene under a large displacement field. The acoustic-phonon mechanism predicts that $s$-wave spin-singlet and $f$-wave spin-triplet pairings are degenerate and dominant. Assuming a spin-polarized valley-unpolarized normal state, we obtain $f$-wave spin-triplet superconductivity with a $T_c\sim 20$ mK near $n_e=-0.6\times 10^{12}$ cm$^{-2}$ for hole doping, in approximate agreement with the experiment. We further predict the ex…
