We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
CrN/MgO(111) multilayers modeled via \textit{ab initio} calculations give rise to nanoscale, scalable, spatially separated two-dimensional electron and hole gases (2DEG+2DHG), each confined to its own CrN interface. Due to the Cr $3d^3$ configuration, both electron and hole gases are based on correlated transition metal layers involving bands of $3d$ character. Transport calculations predict each subsystem will have a large thermopower, on the order of 250 $μ$$V /K$ at room temperature. These heterostructures combine a large thermoelectric efficiency with scalable nanoscale conducting sheets; …
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.
We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent potential approximation and some analytical results. Within the model we compute the self-energies, the density of states and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the DC conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough dopi…
We consider bilayer quantum Hall systems at total filling factor $ν=1$ in presence of a bias voltage $Δ_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $ν=1$ phase-coherent state {\it w…
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage …
The ground state of the two-dimensional electron systems in Bernal bilayer and ABC-stacked multilayer graphenes in the presence of a strong magnetic field is investigated with the Hartree-Fock approximation. Phase diagrams of the systems are obtained, focusing on charge density wave states including states with vortices of valley pseudospins (called a Skyrme crystal). The single-electron states in these stacked graphenes are given by two-component wave functions. That of the first excited Landau level has the same component as the lowest Landau level of the ordinary two-dimensional electrons. …
Bilayer quantum Hall states support a flow of nearly dissipationless staggered current which can only decay through collective channels. We study the dominant finite-temperature dissipation mechanism which in narrow bars is driven by thermal nucleation of pseudospin solitons. We find the finite-temperature resistivity, predict the resulting staggered current-voltage characteristics, and calculate the associated zero-temperature critical staggered current and gate voltage.
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Green's function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been in…
Monolayer graphene shows Seebeck coefficient several times and gas-flow-induced voltage twenty times higher than that of bulk graphite. Here we find that the Seebeck coefficient of multilayer graphene increases monotonically with increasing layer and reaches its peak value at hexa-layer ~77% higher than for monolayer and then decreases, although the electric resistance decreases monotonically with increasing layer. The flow-induced voltage is significantly higher in 2, 4, 5, 6, 7 layered graphene than in 1, 3, 8 layered one, against the prevailing view that it should be proportional to Seebeck…
Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.
We study the effect of vertical electric-field (E-field) on the electronic properties of the multilayer armchair graphene nanoribbon (aGNR). Under E-field, the band structure of a bilayer aGNR undergoes interesting transformations such as change in the electron velocity, sign of the electron effective mass, band gap, the position of the band gap in the momentum space. Depending on the width of the aGNR and the applied E-field, the band gap of the aGNR may either be increased or decreased. When the applied E-field is above a critical value, the band gap of the bilayer aGNR is identical to that …
We demonstrate by experiments and numerical simulations that the low-temperature current-voltage characteristics in diffusive bilayer graphene (BLG) exhibit a strong superlinearity at finite bias voltages. The superlinearity is weakly dependent on doping and on the length of the graphene sample. This effect can be understood as a result of Joule heating. It is stronger in BLG than in monolayer graphene (MLG), since the conductivity of BLG is more sensitive to temperature due to the higher density of electronic states at the Dirac point.
When two monolayers of graphene are stacked with a small relative twist angle, the resulting band structure exhibits a remarkably flat pair of bands at a sequence of 'magic angles' where correlation effects can induce a host of exotic phases. Here, we study a class of related models of $n$-layered graphene with alternating relative twist angle $\pm θ$ which exhibit magic angle flat bands coexisting with several Dirac dispersing bands at the Moiré K point. Remarkably, we find that the Hamiltonian for the multilayer system can be mapped exactly to a set of decoupled bilayers at {\it different} a…
We present a theoretical study on the electron transmission through the AB-BA stacking boundary in multilayer graphene. Using the tight-binding model and the transfer matrix method, we calculate the electron transmission probability through the boundary as a function of electron Fermi energy in multilayers from bilayer to five-layer. We find that the transmission is strongly suppressed particularly near the band touching point, suggesting that the electronic conductivity in general multilayer graphenes is significantly interfered by stacking fault. The conductivity suppression by stacking faul…
We apply the semi-classical quantum Boltzmann formalism for the computation of transport properties to multilayer graphene. We compute the electrical conductivity as well as the thermal conductivity and thermopower for Bernal-stacked multilayers with an even number of layers. We show that the window for hydrodynamic transport in multilayer graphene is similar to the case of bilayer graphene. We introduce a simple hydrodynamic model which we dub the multi-fluid model and which can be used to reproduce the results for the electrical conductivity and thermopower from the quantum Boltzmann equatio…
Twisted bilayers of nodal superconductors were recently proposed as a promising platform to host superconducting phases that spontaneously break time-reversal symmetry. Here we extend this analysis to twisted multilayers, focusing on two high-symmetry stackings with alternating ($\pm θ$) and constant ($θ$) twist angles. In analogy to alternating-twist multilayer graphene, the former can be mapped to twisted bilayers with renormalized interlayer couplings, along with a remnant gapless monolayer when the number of layers $L$ is odd. In contrast, the latter exhibits physics beyond twisted bilayer…
Using a four-band Hamiltonian, we study the phase boundary of spin-polarized-current state (SPCS) of interacting electrons in bilayer graphene. The model of spin-polarized-current state has previously been shown to resolve a number of experimental puzzles in bilayer graphene. The phase boundaries of the SPCS with and without the external voltage between the two layers are obtained in this work. An unusual phase boundary where there are two transition temperatures for a given carrier concentration is found at finite external voltage. The physics of this phenomenon is explained.
We theoretically study the correlated insulator states, quantum anomalous Hall (QAH) states, and field-induced topological transitions between different correlated states in twisted multilayer graphene systems. Taking twisted bilayer-monolayer graphene and twisted double-bilayer graphene as examples, we show that both systems stay in spin polarized, $C_{3z}$-broken insulator states with zero Chern number at 1/2 filling of the flat bands under finite displacement fields. In some cases these spin polarized, nematic insulator states are in the quantum valley Hall phase by virtue of the nontrivial…
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schroedinger equations in three dimensions, within the Non-Equilibrium Green (NEGF) formalism on a Tight Binding Hamiltonian. We show that the small achiev…
We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with topological argument.
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we prov…
We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient …
We present a theoretical study on the orbital magnetism in multilayer graphenes within the effective mass approximation. The Hamiltonian and thus susceptibility can be decomposed into contributions from sub-systems equivalent to monolayer or bilayer graphene. The monolayer-type subband exists only in odd layers and exhibits a delta-function susceptibility at $E_F=0$. The bilayer-type subband appearing in every layer number gives a singular structure in the vicinity of $E_F=0$ due to the trigonal warping as well as a logarithmic tail away from $E_F=0$. The integral of the susceptibility over en…
Plasma oscillations in doped graphene bilayer at zero temperature has been investigated. Bias voltage effect on the dispersion curve for plasmon in bigraphene has been studied in random phase approximation. The possibility of controlling of curvature of dispersion curve for plasmon by changing of bias voltage has been shown. The dependence of this curvature on the bias voltage has been predicted to have the nonmonotonous character. Namely the existence of breaking point for such dependence has been found out. The bias voltage corresponding to the breaking point is shown to increase with free c…
We discuss electric transport and orbital magnetism of multilayer graphenes in a weak-magnetic field using the matrix decomposition technique. At zero temperature, the minimum conductivity is given by that of the monolayer system multiplied by the layer number $N$, independent of the interlayer hopping $t$. When the interlayer hopping satisfies the condition $t\gg \hbar/τ$ with $τ$ being collision time of impurity scattering, $[N/2]$ kinks and $[N/2]+1$ plateaux appear in the Fermi-energy (gate voltage) dependence of the conductivity and the Hall conductivity, respectively. These behaviors are…
We present a simple analytical approach to study anharmonic effects in single layer, bilayer, and multilayer graphene. The coupling between in plane and out of plane modes leads to negative Grüneisen coefficients and negative thermal expansion. The value of the thermal expansion coefficient depends on the coupling to the substrate. The bending rigidity in bilayer graphene shows a crossover between a long wavelength regime where its value is determined by the in plane elastic properties and a short wavelength regime where its value approaches twice that of a single layer.
We uncover a new type of magic-angle phenomena when an AA-stacked graphene bilayer is twisted relative to another graphene system with band touching. In the simplest case this constitutes a trilayer system formed by an AA-stacked bilayer twisted relative to a single layer of graphene. We find multiple anisotropic Dirac cones coexisting in such twisted multilayer structures at certain angles, which we call "Dirac magic." We trace the origin of Dirac magic angles to the geometric structure of the twisted AA-bilayer Dirac cones relative to the other band-touching spectrum in the moiré reciprocal …
We performed coplanar waveguide-based broadband ferromagnetic resonance experiments on the antiferromagnetic insulator MnF$_2$, while simultaneously recording the DC voltage arising in a thin platinum film deposited onto the MnF$_2$. The antiferromagnetic resonance is clearly reflected in both the transmission through the waveguide as well as the DC voltage in the Pt strip. The DC voltage remains largely unaffected by field reversal and thus presumably stems from microwave rectification and/or heating effects. However, we identify a small magnetic field orientation dependent contribution, comp…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 μs. However, the measured capacitance across the graphene channel does not show any hysteresis, but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and g…
Bilayer graphene has been a subject of intense study in recent years. We extend a structural phase field crystal method to include an external potential from adjacent layer(s), which is generated by the corresponding phase field and changes over time. Moreover, multiple layers can be added into the structure. Using the thickness of the boundaries between different stacking variants of the bilayer structure as the key parameter, we quantify the strength of the adjacent layer potential by comparing with atomistic simulation results. We then test the multiple graphene structures, including bilaye…
We study magnetism of an adatom adsorbed on AA-stacked bilayer graphene (BLG) in both unbiased and biased cases, using the Anderson impurity model. We find different magnetic phase diagrams for the adatom, depending on the energy level of the adatom, which varies from the magnetic phase diagram of adatom in normal metals to that in graphene. This is due to the individual energy dependence of the density of states (DOS) of AA-stacked BLG and anomalous broadening of the adatom energy level. Furthermore we investigate the effect of a bias voltage on DOS of AA-stacked and show that the magnetizati…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may…
The perpendicular magnetic anisotropy at the Co/oxide interface in Pt/Co/MOx (MOx = MgOx, AlOx, TbOx) was modified by an electric field using a 10 nm-thick ZrO2 as a solid electrolyte. The large voltage-driven modification of interfacial magnetic anisotropy and the non-volatility of the effect is explained in terms of the migration of oxygen ions towards/away from the Co/MOx interface. While the effect is reversible in Pt/Co/AlOx and Pt/Co/TbOx, where the Co layer can be oxidised or reduced, in Pt/Co/MgOx the effect has been found to be irreversible. We propose that these differences may be re…
Evidence of orbital Hall current induced correlation in second harmonic response of longitudinal and transverse voltage in light metal-ferromagnet bilayers
We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE011 cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control me…
The transmission across a graphene bilayer region is calculated for two different types of connections to monolayer leads. A transfer matrix algorithm based on a tight binding model is developed to obtain the ballistic transmission beyond linear response. The two configurations are found to behave similarly when no gate voltage is applied. For a finite gate voltage, both develop a conductance gap characteristic of a biased bilayer, but only one shows a pronounced conductance step at the gap edge. A gate voltage domain wall applied to the bilayer region renders the conductance of the two config…
A large class of fractional quantum Hall (FQH) states can be classified according to their pattern of zeros, which describes the way ideal ground state wave functions go to zero as various clusters of electrons are brought together. In this paper we generalize this approach to classify multilayer FQH states. Such a classification leads to the construction of a class of non-Abelian multilayer FQH states that are closely related to $\hat{g}_k$ parafermion conformal field theories, where $\hat{g}_k$ is an affine simple Lie algebra. We discuss the possibility of some of the simplest of these non-A…
We investigate spin pumping phenomena in polycrystalline CoFeB/Pt and CoFeB/Ta bilayers and the correlation between the effective spin mixing conductance $g^{\uparrow\downarrow}_{\rm eff}$ and the obtained voltages generated by the spin-to-charge current conversion via the inverse spin Hall effect in the Pt and Ta layers. For this purpose we measure the in-plane angular dependence of the generated voltages on the external static magnetic field and we apply a model to separate the spin pumping signal from the one generated by the spin rectification effect in the magnetic layer. Our results reve…
The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferro- and ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effec…
Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical microscopy and Raman spectroscopy. Conductive silver paint and silver wires were used to fabricate contacts; epoxy resin was employed as masking coating in order to expose a stable, well defined area of graphene. Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide. …
We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its location is unchanged. The I-V characteristic is linear at small voltages, in agreement with experimental observations. In addition we make quantitative predictions for how the inter-layer conductance peaks vary in position with in-plane magnetic field at high voltages. Finally, we predict novel bi-stable behavior at intermediate voltages.
We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective Hamiltonians appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two …
We investigate hybrid structures based on a bilayer quantum spin Hall system in proximity to an s-wave superconductor as a platform to mimic time-reversal symmetric topological superconductors. In this bilayer setup, the induced pairing can be of intra- or inter-layer type, and domain walls of those different types of pairing potentials host Kramers partners (time-reversal conjugate pairs) of Majorana bound states. Interestingly, we discover that such topological interfaces providing Majorana bound states can also be achieved in an otherwise homogeneous system by a spatially dependent inter-la…
We report on our studies of fractal butterflies in biased bilayer graphene in the fractional quantum Hall effect (FQHE) regime. We have considered the case when the external periodic potential is present in one layer and have illustrated the effect of varying both the periodic potential strength and the bias voltage on the FQHE and the butterfly energy gaps. Interestingly, the butterfly spectra exhibits remarkable phase transitions between the FQHE gap and the butterfly gap for chiral electrons in bilayer graphene, by varying either the periodic potential strength or the bias voltage. We also …
We present an experimental and theoretical investigation of all-optical switching by single femtosecond laser pulses. Our experimental results demonstrate that, unlike rare earth-transition metal ferrimagnetic alloys, Pt/Co/[Ni/Co]$_N$/Gd can be switched in the absence of a magnetization compensation temperature, indicative for strikingly different switching conditions. In order to understand the underlying mechanism, we model the laser-induced magnetization dynamics in Co/Gd bilayers and GdCo alloys on an equal footing, using an extension of the microscopic three-temperature model to multiple…
We carried out a concerted effort to determine the absolute sign of the inverse spin Hall effect voltage generated by spin currents injected into a normal metal. We focus on yttrium iron garnet (YIG)|platinum bilayers at room temperature, generating spin currents by microwaves and temperature gradients. We find consistent results for different samples and measurement setups that agree with theory. We suggest a right-hand-rule to define a positive spin Hall angle corresponding to with the voltage expected for the simple case of scattering of free electrons from repulsive Coulomb charges.
Twisted graphene multilayers provide tunable platforms to engineer flat bands and exploit the associated strongly correlated physics. The two-dimensional nature of these systems makes them suitable for encapsulation by materials that break specific symmetries. In this context, recently discovered two-dimensional helimagnets, such as the multiferroic monolayer NiI$_2$, are specially appealing for breaking time-reversal and inversion symmetries due to their nontrivial spin textures. Here we show that this spin texture can be imprinted on the electronic structure of twisted bilayer graphene by pr…
We discuss the chiral decomposition of non-symmetric stacking structures. It is shown that the low-energy electronic structure of Bernal stacked graphene multilayer deposited on h-BN consists of chiral pseudospin doublets. N-layer graphene stocks on h-BN layer have N/2 effective bilayer graphene systems and one effective h-BN layer if N is even or (N-1)/2 effective graphene bilayers plus one graphene monolayer modified by h-BN layer if N is odd. We present the decomposition procedure and we derive the recurrence relations for the effective parameters characterizing the chiral subsystems. The e…
We propose a generalized Peierls substitution method in conjunction with the tight-binding model to explore the magnetic quantization and quantum Hall effect in twisted multilayer graphene under a magnetic field. The Bloch-basis tight-binding Hamiltonian is constructed for large twist angle while a simplified tight-binding model is employed for the magic angle. We investigate extensively the band structures, Landau levels (LLs), and quantum Hall conductivity (QHC) of twisted bilayer graphene and twisted double bilayer graphene, as well as their dependence on the twist angle. Comparison between…
The current proposals for producing non-Abelian anyons and Majorana particles, which are neither fermions nor bosons, are primarily based on the realization of topological superconductivity in two dimensions. We show theoretically that the unique Landau level structure of bilayer graphene provides a new possible avenue for achieving such exotic particles. Specifically, we demonstrate the feasibility of a "parton" fractional quantum Hall (FQH) state, which supports non-Abelian particles without the usual topological superconductivity. Furthermore, we advance this state as the fundamental explan…
The relativistic-like behavior of electrons in graphene significantly influences the interaction properties of these electrons in a quantizing magnetic field, resulting in more stable fractional quantum Hall effect states as compared to those in conventional (non-relativistic) semiconductor systems. In bilayer graphene the interaction strength can be controlled by a bias voltage and by the orientation of the magnetic field. The finite bias voltage between the graphene monolayers can in fact, enhance the interaction strength in a given Landau level. As a function of the bias voltage, a graphene…
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transpor…
We use a quantum mechanical treatment of a ballistic spin current to describe novel aspects of spin transfer to a ferromagnetic multilayer. We demonstrate quantum phenomena from spin transmission resonance (STR) to magnetoelectric spin echo (MESE), depending on the coupling between the magnetic moments in the ferromagnetic thin films. Our calculation reveals new channels through which the zero spin transfer occurs in multilayers: the STR and MESE. We also illustrate that counter-intuitively, a negative spin torque can act initially on the second moment in a bilayer system.
Ferromagnetic/antiferromagnetic bilayers are interfaced with normal metal/ferromagnetic bilayers to form F*/AF/N/F valves. The N-spacer thickness is chosen such that it mediates strong indirect exchange (RKKY) between the outer magnetic layers, which varies in strength/direction depending on the N thickness and in direction on switching F. The system exhibits a strong modulation of the F*/AF exchange bias, oscillating in strength syncronously with the oscillation in the interlayer RKKY exchange across the normal metal spacer. The effect is explained as due to a superposition taking place withi…
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap at charge neutrality, turning the system into an insulator, as observed experimentally. In mono and (Bernal-stacked) trilayers, interactions, although still important, do not have an equally drastic effect, and these systems remain conducting at low temperature. It may be expected that interaction effects become weaker for thicker multilaye…
