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arXiv 1104.3036cond-mat.mes-hall
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双层石墨烯中的拓扑自旋Hall和自旋Nernst效应

Topological spin Hall and spin Nernst effects in a bilayer graphene

A. Dyrdal, J. Barnas

摘要:

我们考虑双层石墨烯中自旋霍尔和自旋能斯特效应的内在贡献。相关的电子光谱从紧束缚哈密顿量,其中还包括内在的自旋轨道相互作用。相应的自旋霍尔和自旋能斯特电导率进行比较,从有效的哈密顿适当的状态附近的中性双层石墨烯的费米能级。这两种电导率都是在线性响应理论和格林函数形式主义内确定的。两个原子片之间的外部电压的影响也包括在内。我们发现从拓扑自旋霍尔绝缘体相在低电压到传统的绝缘体相在较大的电压。

英文摘要:

We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective Hamiltonians appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also included. We found transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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