We demonstrate by experiments and numerical simulations that the low-temperature current-voltage characteristics in diffusive bilayer graphene (BLG) exhibit a strong superlinearity at finite bias voltages. The superlinearity is weakly dependent on doping and on the length of the graphene sample. This effect can be understood as a result of Joule heating. It is stronger in BLG than in monolayer graphene (MLG), since the conductivity of BLG is more sensitive to temperature due to the higher density of electronic states at the Dirac point.
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schroedinger equations in three dimensions, within the Non-Equilibrium Green (NEGF) formalism on a Tight Binding Hamiltonian. We show that the small achiev…
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we prov…
We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient …
Plasma oscillations in doped graphene bilayer at zero temperature has been investigated. Bias voltage effect on the dispersion curve for plasmon in bigraphene has been studied in random phase approximation. The possibility of controlling of curvature of dispersion curve for plasmon by changing of bias voltage has been shown. The dependence of this curvature on the bias voltage has been predicted to have the nonmonotonous character. Namely the existence of breaking point for such dependence has been found out. The bias voltage corresponding to the breaking point is shown to increase with free c…
Evidence of orbital Hall current induced correlation in second harmonic response of longitudinal and transverse voltage in light metal-ferromagnet bilayers
The transmission across a graphene bilayer region is calculated for two different types of connections to monolayer leads. A transfer matrix algorithm based on a tight binding model is developed to obtain the ballistic transmission beyond linear response. The two configurations are found to behave similarly when no gate voltage is applied. For a finite gate voltage, both develop a conductance gap characteristic of a biased bilayer, but only one shows a pronounced conductance step at the gap edge. A gate voltage domain wall applied to the bilayer region renders the conductance of the two config…
We investigate spin pumping phenomena in polycrystalline CoFeB/Pt and CoFeB/Ta bilayers and the correlation between the effective spin mixing conductance $g^{\uparrow\downarrow}_{\rm eff}$ and the obtained voltages generated by the spin-to-charge current conversion via the inverse spin Hall effect in the Pt and Ta layers. For this purpose we measure the in-plane angular dependence of the generated voltages on the external static magnetic field and we apply a model to separate the spin pumping signal from the one generated by the spin rectification effect in the magnetic layer. Our results reve…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its location is unchanged. The I-V characteristic is linear at small voltages, in agreement with experimental observations. In addition we make quantitative predictions for how the inter-layer conductance peaks vary in position with in-plane magnetic field at high voltages. Finally, we predict novel bi-stable behavior at intermediate voltages.
We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective Hamiltonians appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two …
We report on our studies of fractal butterflies in biased bilayer graphene in the fractional quantum Hall effect (FQHE) regime. We have considered the case when the external periodic potential is present in one layer and have illustrated the effect of varying both the periodic potential strength and the bias voltage on the FQHE and the butterfly energy gaps. Interestingly, the butterfly spectra exhibits remarkable phase transitions between the FQHE gap and the butterfly gap for chiral electrons in bilayer graphene, by varying either the periodic potential strength or the bias voltage. We also …
The relativistic-like behavior of electrons in graphene significantly influences the interaction properties of these electrons in a quantizing magnetic field, resulting in more stable fractional quantum Hall effect states as compared to those in conventional (non-relativistic) semiconductor systems. In bilayer graphene the interaction strength can be controlled by a bias voltage and by the orientation of the magnetic field. The finite bias voltage between the graphene monolayers can in fact, enhance the interaction strength in a given Landau level. As a function of the bias voltage, a graphene…
We theoretically show that an interlayer bias voltage in the AB-stacked bilayer graphene nanoribbons with armchair edges induces an electric polarization along the ribbon. Both tight-binding and ab initio calculations consistently indicate that when the bias voltage is weak, the polarization shows opposite signs depending on the ribbon width modulo three. This nontrivial dependence is explained using a two-band effective model. A strong limit of the bias voltage in the tight-binding model shows either one-third or zero polarization, which agrees with topological argument.
We introduce a design of electrically isolated floating bilayer GaAs quantum wells (QW) in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transpor…
Efficient control of magnetism with electric means is a central issue of current spintronics research, which opens an opportunity to design integrated spintronic devices. However, recent well-studied methods are mostly based on electric-current injection, and they are inevitably accompanied by considerable energy losses through Joule heating. Here we theoretically propose a way to exert spin torques into magnetic bilayer systems by application of electric voltages through taking advantage of the Rashba spin-orbit interaction. The torques resemble the well-known electric-current-induced torques…
Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of bilayer hexagonal crystals are studied. The specific models of bilayer graphene and bilayer silicene are both studied. As the gated voltage increases, the total energy level, magnetic structure and band structures of the ground state and the first quasi-stable excited state are tuned. For certain region of the gated voltage, the band gaps of spin up and down are…
We performed coplanar waveguide-based broadband ferromagnetic resonance experiments on the antiferromagnetic insulator MnF$_2$, while simultaneously recording the DC voltage arising in a thin platinum film deposited onto the MnF$_2$. The antiferromagnetic resonance is clearly reflected in both the transmission through the waveguide as well as the DC voltage in the Pt strip. The DC voltage remains largely unaffected by field reversal and thus presumably stems from microwave rectification and/or heating effects. However, we identify a small magnetic field orientation dependent contribution, comp…
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 μs. However, the measured capacitance across the graphene channel does not show any hysteresis, but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and g…
We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 …
We consider bilayer quantum Hall systems at total filling factor $ν=1$ in presence of a bias voltage $Δ_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $ν=1$ phase-coherent state {\it w…
The pseudo-spin model for double layer quantum Hall system with total landau level filling factor $ν=1$ is discussed. Unlike the "traditional" one where interlayer voltage enters as static magnetic field along pseudo- spin hard axis, in our model we consider applied interlayer voltage as a frequency of precessing pseudo-magnetic field lying into the easy plane. It is shown that a Landau-Lifshitz equation for the considered pseudo magnetic system well describes existing experimental data. Besides that, the mentioned model predicts novel directed intra-layer transport phenomenon in the system: u…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may…
We report on the deformation of microwave absorption spectra and of the inverse spin Hall voltage signals in thin film bilayers of yttrium iron garnet (YIG) and platinum at high microwave power levels in a 9.45-GHz TE011 cavity. As the microwave power increases from 0.15 to 200 mW, the resonance field shifts to higher values, and the initially Lorentzian spectra of the microwave absorption intensity as well as the inverse spin Hall voltage signals become asymmetric. The contributions from opening of the magnetization precession cone and heating of YIG cannot well reproduce the data. Control me…
We discuss the physics of the tunable bandgap in bilayer graphene with the gate voltage and doping. A comparison with experimental data obtained by Kuzmenko et al [Phys. Rev. B \textbf{80}, 165406 (2009)] demonstrates the good agreement.
On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias voltage on bilayer GNRs are discussed. We observe the following: (i) Some new extra edge states can be created by edge-hopping modulation for monolayer GNRs. (ii) Intralayer Rashba SOC plays a role in depressing the band energy gap $E_g$ opened by intrinsic SOC for both monolayer and bilayer GNRs. An almost linear dependent relation, i.e., $E_g\sim λ_R$, is fo…
We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 $μF/cm^2$, a value about 125 times higher than the conventional SiO$_2$ back gate capacitance. Unlike the single layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top and back gate geometry is estimate…
Using the Büttiker-Landauer formulation of transport theory in the linear response regime, the valley currents and non-local resistances of bilayer graphene nanostructures with broken inversion symmetry are calculated. It is shown that broken inversion symmetry in bilayer graphene nanostructures leads to striking enhancement of the non-local 4-terminal resistance and to valley currents several times stronger than the conventional electric current when the Fermi energy is in the spectral gap close to the energy of Dirac point. The scaling relation between local and non-local resistances is inve…
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage …
We carried out a concerted effort to determine the absolute sign of the inverse spin Hall effect voltage generated by spin currents injected into a normal metal. We focus on yttrium iron garnet (YIG)|platinum bilayers at room temperature, generating spin currents by microwaves and temperature gradients. We find consistent results for different samples and measurement setups that agree with theory. We suggest a right-hand-rule to define a positive spin Hall angle corresponding to with the voltage expected for the simple case of scattering of free electrons from repulsive Coulomb charges.
We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a…
The magnetic damping constant is a critical parameter for magnetization dynamics and the efficiency of memory devices and magnon transport. Therefore, its manipulation by electric fields is crucial in spintronics. Here, we theoretically demonstrate the voltage-control of magnetic damping in ferro- and ferrimagnetic-insulator (FI)/topological-insulator (TI) bilayers. Assuming a capacitor-like setup, we formulate an effective dissipation torque induced by spin-charge pumping at the FI/TI interface as a function of an applied voltage. By using realistic material parameters, we find that the effec…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-ban…
We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics…
We investigate hybrid structures based on a bilayer quantum spin Hall system in proximity to an s-wave superconductor as a platform to mimic time-reversal symmetric topological superconductors. In this bilayer setup, the induced pairing can be of intra- or inter-layer type, and domain walls of those different types of pairing potentials host Kramers partners (time-reversal conjugate pairs) of Majorana bound states. Interestingly, we discover that such topological interfaces providing Majorana bound states can also be achieved in an otherwise homogeneous system by a spatially dependent inter-la…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's ri…
Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, re…
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduces substantial changes of wavefunctions, such as gapless topological protected states, standing waves with bonding and anti-bonding characteristics, rich structures in density of states and optical spectra. The wavefunctions present well-behaved standing waves in pure system and complicated node structures in geometry-modulated system. The optic…
We study heating effects in a chain of weakly coupled grains due to electron-hole pair creation. The main mechanism for the latter at low temperatures is due to inelastic electron cotunneling processes in the array. We develop a quantitative kinetic theory for these systems and calculate the array temperature profile as a function of grain parameters, bias voltage or current, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments. In the low- and high-voltage limits we solve the stationary heat-flux equation analytically. We dem…
Domain wall in bilayer graphene with Rashba spin-orbital coupling and staggered sublattice potentials, at the interface between two domains with different gated voltages, is studied. Varying type of zero-line modes are identified, including zero-line mode with pure spin filtering effect. The Y-shape current partition at the junction among three different domains are proposed.
We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how both, the TMS voltage and the TMS effect, depend on the size, position and intensity of the applied laser spot. For this study, a large variety of different temperature distributions was created across…
We theoretically consider the spin-wave mode- and wavelength-dependent enhancement of the Gilbert damping in magnetic insulator--normal metal bilayers due to spin pumping as well as the enhancement's relation to direct and alternating inverse spin Hall voltages in the normal metal. In the long-wavelength limit, including long-range dipole interactions, the ratio of the enhancement for transverse volume modes to that of the macrospin mode is equal to two. With an out-of-plane magnetization, this ratio decreases with both an increasing surface anisotropic energy and mode number. If the surface a…
Weakly disordered bilayer quantum Hall systems at filling factor $ν=1$ show spontaneous interlayer phase coherence if the layers are sufficiently close together. We study the collective modes in the system, the current-voltage characteristics and their evolution with an in-plane magnetic field in the phase-coherent regime.
Bilayer quantum Hall states support a flow of nearly dissipationless staggered current which can only decay through collective channels. We study the dominant finite-temperature dissipation mechanism which in narrow bars is driven by thermal nucleation of pseudospin solitons. We find the finite-temperature resistivity, predict the resulting staggered current-voltage characteristics, and calculate the associated zero-temperature critical staggered current and gate voltage.
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Green's function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been in…
Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.
When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evolve when the junction length d is changed. Recent experiments with fixed geometry reported a significant reduction of the threshold voltage for the onset of photon emission, whose origin is still under…
The large lattice constant of Moire superlattice formed in twisted bilayer graphene for small twist enables observing the Landau levels splitting into Hofstadter butterflies in energy spectra for moderate magnetic field. This is expected for generic system under homogeneous bias conditions but its robustness against spatial potential fluctuations is left open question. We study the energy structure of twisted bilayer system in dependence of both, the homogeneous magnetic field and the bias voltage applied exclusively in its central part. Although the translational symmetry is broken, the energ…
Magnetic fields force ballistic electrons injected from a narrow contact to move along skipping orbits and form caustics. This leads to pronounced resistance peaks at nearby voltage probes as electrons are effectively focused inside them, a phenomenon known as magnetic focusing. This can be used not only for the demonstration of ballistic transport but also to study the electronic structure of metals. Here we use magnetic focusing to probe narrow bands in graphene bilayers twisted at 2 degrees. Their minibands are found to support long-range ballistic transport limited at low temperatures by i…
Gated heterostructures containing bilayer graphene with staggered sublattice potentials are investigated by tight binding model with Rashba spin-orbital coupling and Hubbard interaction. The topological phase diagrams depend on the combinations of substrates and the Hubbard interaction. The presence of the staggered sublattice potential favor the topological phase transition with small Rashba spin-orbital coupling strength. The presence of the Hubbard interaction modified the topological phase boundaries, increasing the minimal spin-orbital coupling strength for topological phase transition. A…
Asymmetric i/V curves with respect to the polarity of the voltage bias were observed in the Hg-Au junctions containing bilayers of alkanethiols of different chain length. Larger current resulted when a negative bias was applied to the metal carrying a longer chain alkanethiol monolayer. This behavior is simulated using a single molecule junction model, within the frameworks of the extended Huckel (EH) model and the nonequilibrium Green's function formalism at the Hartree Fock level (NEGF-HF). Qualitative agreement with the experimental results with respect to the magnitude and sign of this asy…
We consider the conductance of a normal-superconductor junction in bilayer graphene in the framework of the Dirac-Bogoliubov-De-Gennes equation. A remarkable suppression of the conductance at voltages just below the superconducting gap is found. This can be understood in terms of the spinor structures of the electron and hole excitations, in particular the reflected valence band hole being orthogonal to the incoming electron at normal incidence. Minor changes in response to referee reports, references updated.
We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.
One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area and it is essential to study its thermal properties. Here, the effect of heating a bilayer structure was investigated using in situ Raman spectroscopy. In order to observe the effects on each individual layer, an isotopically labelled bilayer graphene was synthesized where the two layers are composed of different carbon isotopes. Therefore, the frequency of the phonons in the Raman spectra is shifted in relation to each other. This technique was use…
We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic field. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage.
Hamiltonian and eigenstate problem is formulated for a bilayer graphene in terms of Clifford's geometric algebra \textit{Cl}$_{3,1}$. It is shown that such approach allows to perform analytical calculations in a simple way if geometrical algebra rotors are used. The measured quantities are express through spectrum and rotation half-angle of the pseudospin that appears in geometric algebra rotors. Properties of free charge carriers -- pseudospin, velocity and Berry phase -- in a bilayer graphene are investigated in the presence of the external voltage applied between the two layers.
