We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change the barrier height in time. If such a rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasi-particle
Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is only poss…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the TH…
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-vall…
Electrically controllable valence-conduction band reversals in helical trilayer graphene
Weizmann Institute of Science（魏茨曼科学研究所）；Massachusetts Institute of Technology（麻省理工学院）；University of Texas at Dallas（德克萨斯大学达拉斯分校）；Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（斯坦福直线加速器中心）；National Institute for Materials Science（国立材料研究所）
We study the dynamics of impurity bound electrons interacting with a bath of conduction band electrons in a semiconductor. Only the exchange interaction is considered. We derive master equations for the density matrices of single and two qubit systems under the usual Born and Markov approximations. The bath mediated RKKY interaction in the two qubit case arises naturally. It leads to an energy shift significant only when the ratio ($R_{T}$) of the inter-qubit distance to the thermal deBroglie wavelength of the bath electrons is small. This bath mediated interaction also has a profound impact o…
We study the intra-valley spin-orbit mediated spin relaxation in monolayers of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a Rashba-like coupling due to the breaking of the out-of-plane inversion symmetry are considered. We show that, in the hole doped regime, the out-of-plane spin relaxation is not very efficient since the spin splitting of the valence band tends to stabilize the spin polarization in this direction. We obtain spin lifetimes larger than nanoseconds, in agreement with recent valley polarization experiments.
The Bloch theorem mathematically proves that in a periodic crystal, electrons can acquire a negative mass. The present work aims to provide a physical understanding for why this is so. We successively analyze the consequences of the 3-fold orbital valence state coupling to (i) a non-degenerate orbital level in the conduction band, (ii) a 3-fold orbital level in the conduction band, and (iii) spin states through spin-orbit interaction. We show that it is not at all trivial for valence electrons to acquire a negative mass for whatever their momentum with respect to the crystal axes: it is necess…
Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, doping, rotation angle, and bias voltage, re…
Excited conduction electrons, conduction holes, and valence holes in monolayer electron-doped graphene exhibit unusual Coulomb decay rates. The deexcitation processes are studied using the screened exchange energy. They might utilize the intraband single-particle excitations (SPEs), the interband SPEs, and the plasmon modes, depending on the quasiparticle states and the Fermi energies. The low-lying valence holes can decay through the undamped acoustic plasmon, so that they present very fast Coulomb deexcitations, nonmonotonous energy dependence, and anisotropic behavior. However, the low-ener…
A theoretical investigation on the coherent Dirac-like quasiparticle dynamics in monolayer $\text{MoS}_2$ under an ultrashort optical pulse irradiation is presented. Particularly, we remain specific features of ML-MDS associated with the mass asymmetry $α$ and topological aspect $β$ parameters resulting in Schr$\stackrel{..}{\text{o}}$dinger type wavevector of charge carriers. The direct band gap, spin-resolved valence band spilitting and valley degeneracy breaking due to strong spin-orbit coupling affect ultrafast dynamics of Dirac fermions. Because the duration of the optical pulse is less t…
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima ar…
A novel DC and AC driving configuration is proposed for semiconductor superlattices, in which the THz AC driving is provided by an intense bichromatic cw laser. The two components of the laser, usually in the visible light range, are near but not exactly resonant with interband Wannier-Stark transitions, and their frequency difference equals the Wannier-Stark ladder spacing. Multi-photon processes with the intermediate states in the conduction (valence) band cause dynamical delocalization and localization of valence (conduction) electrons, and the corresponding formation and collapse of the qu…
We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct spin polarization in the conduction bands of these compounds by a systematic study of the doping dependence of the A and B excitonic resonances. Electrons in the highest-energy valence band and the lowest-energy conduction band have antiparallel spins in monolayer WSe2, and parallel spins in monolayer MoSe2. The spin splitting is determined to be hundreds of m…
We study the electronic structure of monolayer MoS$_2$ quantum dots subject to a perpendicular magnetic field. The coupling between conduction and valence band gives rise to mid-gap topological states which localize near the dot edge. These edge states are analogous to those of 1D quantum rings. We show they present a large, Zeeman-like, linear splitting with the magnetic field, anticross with the delocalized Fock-Darwin-like states of the dot, give rise to Aharonov-Bohm-like oscillations of the conduction (valence) band low-lying states in the K (K') valley, and modify the strong field Landau…
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single conduction band electron is able to induce a spontaneous collective magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions. The carrier mediated ferromagnetism in the dot survives at temperatures above 1 Kelvin, two orders of magnitude larger than the Curie temperature for the same material in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of injected electrons.
SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T* ~ 4 K limiting its scientific investigation and device application. Here, we report the enhancement of T * in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatia…
We present a tight-binding (TB) model and $\mathbf{k\cdot p}$ theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all $s$ and $p$ valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono- and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the $Γ$ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number o…
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.
The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured semiconductors with bulk superconductors is of interest because these systems can host unconventional electronic excitations such as Majorana fermions when the semiconductor's charge carriers are subject to a large spin-orbit coupling. The latter requirement generally favors the use of hole-doped semiconductors. On the other hand, basic symmetry considerations imply…
The heat capacity of conduction electrons obtained from the Sommerfeld expansion is shown to be tunable via the Rashba and Dresselhaus spin-orbit coupling parameters. Using an AlInSb/InSb/AlInSb as a representative heterostructure with alterable well and asymmetric barrier regions, the heat capacity is found to be higher for the spin-down electrons and suffers a reduction for wider wells. A further lowering is obtained through the application of an uniaxial strain. Finally, we suggest a method to determine the spin lifetimes for spins relaxing via the D'yakonov-Perel' mechanism from experiment…
The Dirac-like quasiparticles in honeycomb graphene lattice are taken to possess a non-zero effective mass. The charge carriers involve to interact with a femtosecond strong laser pulse. Due to the scattering time of electrons in graphene ($τ\approx 10-100 fs$), the one femtosecond optical pulse is used to have coherence effect, and consequently, it is realized to use the time-dependent Schr$\ddot{o}$dinger equation for coupling electron with strong electromagnetic field. Generalized wavevector of relativistic electrons interacting with electric field of laser pulse leads to obtain a time-depe…
Optical selection rules for one-dimensional graphene nanoribbons are analytically studied and clarified based on the tight-binding model. A theoretical explanation, through analyzing the velocity matrix elements and the features of wavefunctions, can account for the selection rules, which depend on the edge structure of nanoribbon, namely armchair or zigzag edges. The selection rule of armchair nanoribbons is ΔJ=0, and the optical transitions occur from the conduction to valence subbands of the same index. Such a selection rule originates in the relationships between two sublattices and betwee…
An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due to the increase in carrier concentration resulting from thermal excitation of electron-hole pairs. At large gate voltages excitation of electron-hole pairs is suppressed, and the resistance increases with increasing temperature because of the enhanced electron-phonon scattering. We find that the simple model with overlapping conduction and valence bands, each…
The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying nonequilibrium electronic spin density at one of its surfaces, so that their propagation across AFI deprived of conduction electrons eventually leads to reversal of magnetization of a ferromagnetic metal (FM) attached to the opposite surface of AFI. We employ a recently developed time-dependent nonequilibrium Green functions combined with the Landau-Lifshitz-Gilber…
In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium spin coherence in device applications thus requires understanding how valence and conduction band spin splitting affects carrier spin dynamics. This paper studies the relevance of this decoherence mechanism for collective intersubband spin-density excitations (SDEs) in quantum wells. A density-functional formalism for the linear spin-density matrix response is …
Nesting in a semimetal can lead to an excitonic insulator state with spontaneous coherence between conduction and valence bands and a gap for charged excitations. In this paper we present a theory of the ferromagnetic state that occurs when the density of electrons in the conduction band and holes in the valence band differ. We find an unexpectedly rich doping-field phase diagram and an unusual collective excitation spectrum that includes two gapless collective modes. We predict regions of doping and external field in which phase-separated condensates of electrons and holes with parallel spins…
Effective mass equations are the simplest models of carrier states in a semiconductor structures that reduce the complexity of a solid-state system to Schrödinger- or Pauli-like equations resempling those well known from quantum mechanics textbooks. Here we present a systematic derivation of a conduction-band effective mass equation for a self-assembled semiconductor quantum dot in a magnetic field from the 8-band kp theory. The derivation allows us to classify various forms of the effective mass equations in terms of a hierarchy of approximations. We assess the accuracy of the approximations …
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bil…
In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct semiconductors. The vertical strain has been selected to modify the electrical properties. The bandgap shows a maximum and decreases for both tensile and compressive strains. The valence band at K-point displays a large spin-splitting, whereas the conduction band has a negligible splitting. On the other hand, the second conduction band has a large spin-splitting…
The spin structure of the valence and conduction bands at the $\overline{\text{K}}$ and $\overline{\text{K}}$' valleys of single-layer WS$_2$ on Au(111) is determined by spin- and angle-resolved photoemission and inverse photoemission. The bands confining the direct band gap of 1.98 eV are out-of-plane spin polarized with spin-dependent energy splittings of 417 meV in the valence band and 16 meV in the conduction band. The sequence of the spin-split bands is the same in the valence and in the conduction bands and opposite at the $\overline{\text{K}}$ and the $\overline{\text{K}}$' high-symmetr…
We microscopically analyze thermal spin pumping mediated by magnons, at the interface between a ferromagnetic insulator and a non-magnetic metal, in the semiclassical regime. The generation of a spin current is discussed by calculating the thermal spin transfer torque, which breaks the spin conservation law for conduction electrons and operates the coherent magnon state. Inhomogeneous thermal fluctuations between conduction electrons and magnons induce a net spin current, which is pumped into the adjacent non-magnetic metal. The pumped spin current is proportional to the temperature difference…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (~1%), …
In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to investigate the electrical performances. Two configurations demonstrate considerable bandgaps, whereas, the bandgaps are close to zero for other structures. The in-plane biaxial strain is applied to modify the electrical properties. The bandgap reaches a maximum at a specific strain level and then closes at more enormous compressive and tensile strains. The energy of three valleys ($Γ$, Q, and K) in the conduction ban…
We investigate the photon-mediated heat flow between two Josephson-coupled Bardeen-Cooper-Schrieffer (BCS) superconductors. We demonstrate that in standard low temperature experiments involving temperature-biased superconducting quantum interference devices (SQUIDs), this radiative contribution is negligible if compared to the direct galvanic one, but it largely exceeds the heat exchanged between electrons and the lattice phonons. The corresponding thermal conductance is found to be several orders of magnitude smaller, for real experiments setup parameters, than the universal quantum of therma…
We consider theoretically a closed (zero-dimensional) semiconductor microcavity where confined vacuum photonic mode is coupled to electrons in valence band of the semiconductor. It is shown that vacuum-induced virtual electron transitions between valence and conduction bands result in renormalization of electron energy spectrum. As a consequence, vacuum-induced band gaps appear within the valence band. Calculated values of the band gaps are of sub-meV scale, that makes this QED effect to be measurable in state-of-the-art experiments.
Magnetic moments strongly coupled to the spins of conduction electrons in a nanostructure can confine the conduction-electron motion due to scattering at almost localized Kondo singlets. We study the resulting local-moment formation in the conduction-electron system and the magnetic exchange coupling mediated by the Kondo singlets. Its distance dependence is oscillatory and induces robust ferro- or antiferromagnetic order in multi-impurity systems.
We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS (FT-STS), we map the energy versus momentum dispersion relations for monolayer and bilayer WSe$_2$. Further, by tracking allowed and forbidden scattering channels as a function of energ…
We propose the 14-band $\mathbf k \cdot \mathbf p$ model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the $Γ_{15}$ conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4$\times$4 effective Hamiltonian mode…
Without a periodic reference framework, local structures in noncrystalline solids are difficult to specify, but they still exert an enormous influence on materials properties. For example, thermomechanical responses of organic and inorganic glasses sensitively depend on the distribution of free volume or soft spots$^{1,2}$. Meanwhile, strong electron localization$^{3}$ that endows unparalleled electrical breakdown strengths to amorphous insulators is easily compromised by local defects that promote inelastic tunneling over a variable range$^{4,5}$. Here we report how metallic conduction can ov…
Superfluidity has recently been reported in double electron-hole bilayer graphene. The multiband nature of the bilayers is important because of the very small band gaps between conduction and valence bands. The long range nature of the superfluid pairing interaction means that screening must be fully taken into account. We have carried out a systematic mean-field investigation that includes (i) contributions to screening from both intraband and interband excitations, (ii) the low-energy band structure of bilayer graphene with its small band gap and flattened Mexican hat-like low-energy bands, …
We derive analytically the change of exciton fine structure splitting (FSS) under the external stresses in the self-assembled InAs/GaAs quantum dots using the Bir-Pikus model. We find that the FSS change is mainly due to the strain induced valence bands mixing and valence-conduction band coupling. The exciton polarization angle under strain are determined by the argument of the electron-hole off-diagonal exchange integrals. The theory agrees well with the empirical pseudopotential calculations.
A formalism for determining energy eigenstates of cylindrical lead salt quantum wires in the multiple-band envelope-function approximation is developed. Electron energy dispersion for quantum wire subbands within the conduction and valence bands is found.
The electronic properties of aluminum-doped graphenes enriched by multi-orbital hybridizations are investigated using first-principles calculations. The feature-rich electronic structures exhibit the quasi-rigid red shifts of the carbon-created energy bands, the Al-dominated valence and conduction bands, and many free electrons in the conduction Dirac cone. These are directly reflected in the special structures of density of states (DOS). The Al- and alkali-induced high free carrier densities are almost the same. There exist certain important differences among the Al-, alkali- and halogen-dope…
Effects of confinement and electron correlations on the relative time delay between the 3s and 3p photoemissions of Ar confined endohedrally in C$_{60}$ are investigated using the time dependent local density approximation - a method that is also found to mostly agree with recent time delay measurements between the 3s and 3p subshells in atomic Ar. At energies in the neighborhood of 3p Cooper minimum, correlations with C$_{60}$ electrons are found to induce opposite temporal effects in the emission of Ar 3p hybridized symmetrically versus that of Ar 3p hybridized antisymmetrically with C$_{60}…
