We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central layer and hybridizes the linear and parabolic low-energy bands, leaving a chiral Hamiltonian essentially different from that of monolayer or bilayer graphene. Using the self-consistent Born approximation, we find that the density of states and the minimal conductivity in the presence of disorder generally increase as the gate field increases, in sharp contrast with bilayer graphene.
In a magnetic field graphene trilayers support a special multiplet of 12 zero(-energy)-mode Landau levels with a threefold degeneracy in Landau orbitals. A close look is made into such zero-mode levels in ABA-stacked trilayers, with the Coulomb interaction taken into account. It turns out that the zero-mode Landau levels of ABA trilayers are greatly afflicted with electron-hole and valley asymmetries, which come from general hopping parameters and which are enhanced by the Coulomb interaction and the associated vacuum effect, the orbital Lamb shift, that lifts the zero-mode degeneracy. These a…
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicul…
For the first time, we have observed the obvious triple G peak splitting of ABA stacked trilayer graphene. The G peak splitting can be quantatively understood through the different electron-phonon coupling strength of Ea', Eb' and Ea" modes. In addition, the fluctuation of G peak position at different sample locations can also be understood from the view of the varied interaction strength among graphene layers of TLG, which is induced by nonuniform hole doping at the microscopic level.
Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.
Layer stacking and crystal lattice symmetry play important roles in the band structure and the Landau levels of multilayer graphene. ABA-stacked trilayer graphene possesses mirror-symmetry-protected monolayer-like and bilayer-like band structures. Broken mirror symmetry by a perpendicular electric field therefore induces hybridization between these bands and various quantum Hall phases emerge. We experimentally explore the evolution of Landau levels in ABA-stacked trilayer graphene under electric field. We observe a variety of valley and orbital dependent Landau level evolutions. These evoluti…
The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the 'nesting' of two nearly parabolic bands in the electronic spectrum. The intensity of this resonant absorption can be controlled by adjusting the gate voltage. The effect is robust with respect to increasing temperature.
We present the solutions of the energy spectrum of charge carriers confined in quantum ring in ABA-stacked trilayer graphene subjected to a perpendicular magnetic field. The calculations were performed in the context of the continuum model by solving the Dirac equation for a zero width ring geometry, i.e. freezing out the carrier radial motion. We show that the obtained energy spectrum exhibits different symmetries with respect to the magnetic field and other parameters. The application of a potential shift the energy spectrum vertically while the application of a magnetic field breaks all sym…
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.
We investigate the proximity spin-orbit and exchange couplings in ABA and ABC trilayer graphene encapsulated within monolayers of semiconducting transition-metal dichalcogenides and the ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$. Employing first-principles calculations we obtain the electronic structures of the multilayer stacks and extract the relevant proximity-induced orbital and spin interaction parameters by fitting the low-energy bands to model Hamiltonians. We also demonstrate the tunability of the proximity effects by a transverse electric field. Using the model Hamiltonians we als…
The tight-binding model is closely associated with the modified random-phase approximation to thoroughly explore the electron-electron interactions in trilayer AB-stacked graphene. The intralayer and interlayer atomic/Coulomb interactions dominate the collective and electron-hole excitations. The unusual energy bands are directly reflected in the diverse transferred momentum-frequency phase diagrams. There exist three kinds of plasmon modes during the variation of the doping level, being accompanied with the complicated intraband and interband single-particle excitations. The excitation behavi…
Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique stacking-induced SHG in trilayer graphene, whose individual monolayer sheet is centrosymmetric. Depending on layer stacking sequence, we observe a strong optical SHG in Bernal (ABA) stacked non-centrosymmetric trilayer, while it vanishes in rhombohedral (ABC) stacked one which preserves inversion symmetry. This highly contrasting SHG due to the distinct stacki…
We obtain the quasiparticle band structure of ABA and ABC-stacked graphene trilayers through ab initio density functional theory (DFT) and many-body quasiparticle calculations within the GW approximation. To interpret our results, we fit the DFT and GW $π$ bands to a low energy tight-binding model, which is found to reproduce very well the observed features near the K point. The values of the extracted hopping parameters are reported and compared with available theoretical and experimental data. For both stackings, the self energy corrections lead to a renormalization of the Fermi velocity, an…
Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric field, its band structure exhibits several off-center Dirac points (so-called Dirac gullies) in each valley. Here, the formation of Dirac gullies and the interaction-induced breakdown of gully coherence is explored via magnetotransport measurements in high-quality Bernal-stacked (ABA) trilayer graphene. In the absence of a magnetic field, multiple Lifshitz transi…
We observed distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We found that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two …
The sequence of the zeroth Landau levels (LLs) between filling factors $ν$=-6 to 6 in ABA-stacked trilayer graphene (TLG) is unknown because it depends sensitively on the non-uniform charge distribution on the three layers of ABA-stacked TLG. Using the sensitivity of quantum Hall data on the electric field and magnetic field, in an ultraclean ABA-stacked TLG sample, we quantitatively estimate the non-uniformity of the electric field and determine the sequence of the zeroth LLs. We also observe anticrossings between some LLs differing by 3 in LL index, which result from the breaking of the cont…
We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of the perpendicular electric field and the Fermi level over an unprecedentedly large range. We observe a resistance change of six orders of magnitude in the ABC trilayer, which demonstrates the opening of a band gap. Our data suggest that the gap saturates at a large displacement field of D ~ 3 V/nm, in agreement with self-consistent Hartree calculations. In con…
ABC-stacked trilayer graphene has exhibited a variety of correlated phenomena owing to its relatively flat bands and gate-tunable bandgap. However, convenient methods are still lacking for identifying ABC graphene with nanometer-scale resolution. Here we demonstrate that the scanning near-field optical microscope (SNOM) working in ambient conditions can provide quick recognition of ABC trilayer graphene with no ambiguity and excellent resolution (~20 nm). The recognition is based on the difference in their near-field infrared (IR) responses between the ABA and ABC trilayers. We show that in mo…
We report on quantum capacitance measurements of high quality, graphite- and hexagonal boron nitride encapsulated Bernal stacked trilayer graphene devices. At zero applied magnetic field, we observe a number of electron density- and electrical displacement-tuned features in the electronic compressibility associated with changes in Fermi surface topology. At high displacement field and low density, strong trigonal warping gives rise to emergent Dirac gullies centered near the corners of the hexagonal Brillouin and related by three fold rotation symmetry. At low magnetic fields of $B=1.25$~T, th…
We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a π-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC stacking order, due to the opening of a gap at the Dirac point, while the ABA-stacked trilayer graphene remains metallic. We discuss our results in the context of recent electronic transport experiment…
We study the effect of perpendicular electric fields on the band structures of ABA and ABC graphene multilayers, and find that the electronic screening effect is significantly different between them. In ABA multilayers, the field produces a band overlap and gives a linear screening, while in ABC multilayers, in contrast, it opens an energy gap in the surface-state band at low energy, leading to a strong screening effect essentially non-linear to the field amplitude. The energy gap of a large ABC stack sharply rises when the external field exceeds a certain critical value.
ABA-stacked trilayer graphene (TLG), the simplest system consisting of both massless and massive Dirac fermions, is expected to exhibit many interesting broken-symmetry quantum Hall states and interaction-induced phenomena. However, difficulties in microscopically identifying the stacking order of the TLG and limited spectroscopic resolution have stymied experimental probes of these interesting states and phenomena in scanning tunneling microscopy (STM) studies. Here we studied the detailed features of the electronic structure in the ABA TLG by using high-resolution STM measurements. Landau-le…
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau levels (LL). Under an out-of-plane electric field E, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E selectively breaks the LL degen…
The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by $ΔE(\mathbf{k})\sim 50\div200\,{\rm meV}$ for ABC stacked trilayer graphene and for ABA trilayer graphene by $ΔE(\mathbf{k})\sim 30\div150\,{\rm meV}$ ($ΔE(\mathbf{k})\sim 1\div5\,{\rm meV}$) for t…
We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance prope…
Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is tuned away from charge neutrality. A similar, but substantially weaker effect is seen in samples with the more common ABA stacking order. The strong infrared response of the optical phonons and the p…
The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates t…
The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the rhombohedral form, due to the chirality of the electrons, the Klein paradox is found at normal incidence for SG devices while at high energy interband scattering between additional propagation modes can occur. The electrons in Bernal ABA TLG can have a monolayer- or bilayer-like character when incident on a SG device. Using a DG however both propagation modes will cou…
Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\s…
The electronic spectrum of three coupled graphene layers (graphene trilayers) is investigated in the presence of an external magnetic field. We obtain analytical expressions for the Landau level spectrum for both the ABA and ABC - type of stacking, which exhibit very different dependence on the magnetic field. The effect of layer asymmetry and of external gate voltages can strongly influence the properties of the system.
There is an increasing interest in the electronic properties of few layer graphene as it offers a platform to study electronic interactions because the dispersion of bands can be tuned with number and stacking of layers in combination with electric field. However, electronic interaction becomes important only in very clean devices and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism (QHF) seen in ABA trilayer graphene (ABA-TLG). Due to high mobility $\sim$5…
We perform an optical spectroscopy study to investigate the properties of different artificial MoS$_2$ bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS$_2$ in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscopy, second-harmonic-generation microscopy and photoluminescence measurements allows us to determine the degree of interlayer coupling in our samples. We find that even for electronically decoupled arti…
Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quantum yields and tunable spectral resonance compared to its bilayer heterostructures at cryogenic temperatures. The observed enhancement in the photoluminescence quantum yield is due to significantly la…
We report a nano-infrared (IR) imaging study of trilayer graphene (TLG) with both ABA (Bernal) and ABC (rhombohedral) stacking orders using the scattering-type scanning near-field optical microscope (s-SNOM). With s-SNOM operating in the mid-IR region, we mapped in real space the surface plasmon polaritons (SPPs) of ABA-TLG and ABC-TLG, which are tunable with electrical gating. Through quantitative modeling of the plasmonic imaging data, we found that the plasmon wavelength of ABA-TLG is significantly larger than that of ABC-TLG, resulting in a sizable impedance mismatch and hence a strong pla…
Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of coupling constant. Such FMI/TI/FMI structure not onl…
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently attracted tremendous interest as potential valleytronic and nano-electronic materials, in addition to being well-known as excellent lubricants in the bulk. The interlayer van der Waals (vdW) coupling and low frequency phonon modes, and how they evolve with the number of layers, are important for both the mechanical and electrical properties of 2D TMDs. Here we uncover the ultra-low frequency interlayer breathing and shear modes in few-layer MoS2 and WSe2, prototypical layered TMDs, using both Raman spectroscopy …
Small-twist-angle bilayer graphene supports strongly correlated insulating states and superconductivity. Twisted few-layer graphene systems are likely to open up new directions for strong correlation physics in moiré superlattices. We derive and study moiré band models that describe the electronic structure of graphene trilayers in which one of the three layers is twisted by a small angle relative to perfect AAA, ABA, or ABC stacking arrangements. We find that the electronic structure depends very strongly on the starting stackings arrangement and on which layer is twisted. We identify ABA sta…
Optical Hall conductivity, as directly related to Faraday rotation, is theoretically studied for bilayer and trilayer graphene. In bilayer graphene, the trigonal warping of the band dispersion greatly affects the resonance structures in Faraday rotation not only in the low-energy region where small Dirac cones emerge, but also in the higher-energy parabolic bands as a sequence of satellite resonances. In ABA-stacked trilayer, the resonance spectrum is a superposition of effective monolayer and bilayer contributions with band gaps, while ABC trilayer exhibits a distinct spectrum peculiar to the…
In this article we study the ferromagnetic behavior of ABC-stacked trilayer graphene. This is done using a nearest-neighbor tight-binding model, in the presence of long-range Coulomb interactions. For a given electron-electron interaction g and doping level n, we determine whether the total energy is minimized for a paramagnetic or ferromagnetic configuration of our variational parameters. The g versus n phase diagram is first calculated for the unscreened case. We then include the effects of screening using a simplified expression for the fermion bubble diagram. We show that ferromagnetism in…
X ray resonant magnetic scattering (XRMS) was used to characterize the magnetization of 2D arrays of trilayer submicron magnets. The interpretation of the data required the understanding of the morphology of the magnets which was also deduced from the scattered intensity. The magnets consisted of two magnetostatically coupled ferromagnetic layers separated by a non-magnetic spacer. The scattered intensity from the disks resulted to be dependent on the disks surface curvature. This made the collected intensity at each Bragg reflection (BR) to be correlated to the reflected light from locations …
We present a detailed numerical simulation study of the effects caused by the magnetodipolar interaction between ferromagnetic (FM) layers of a trilayer magnetic nanoelement on its magnetization dynamics. As an example we use a Co/Cu/Ni80Fe20 element with a square lateral shape where the magnetization of FM layers forms a closed Landau-like domain pattern. First we show that when the thickness of the non-magnetic (NM) spacer is in the technology relevant region h ~ 10 nm, magnetodipolar interaction between 90o Neel domain walls in FM layers qualitatively changes the equilibrium magnetization s…
We develop a theory for interlayer pairing of chiral electrons in graphene materials which results in an unconventional superconducting (S) state with s-wave spin-triplet order parameter. In a pure bilayer graphene, this superconductivity exhibits a gapless property with an exotic effect of temperature-induced condensation causing an increase of the pairing amplitude (PA) with increasing temperature. We find that a finite doping opens a gap in the excitation spectrum and weakens this anomalous temperature-dependence. We further explore the possibility of realizing variety of pairing patterns w…
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the …
Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene
Indian Institute of Science（印度科学研究所）；National Institute for Materials Science（物质材料研究机构）；Physical Research Laboratory（物理研究实验室）；Institute of Mathematical Sciences（数学科学研究所）；Homi Bhabha National Institute（霍米·巴巴国立研究所）
研究 ABA 三层石墨烯零朗道能级中偶数分母分数量子霍尔态，通过实验观察到特定分数态及相关子态，确定其出现在特定位移场窗口与朗道能级交叉处，发现是朗道能级混合及反演对称性破缺所致，拓展了该领域并建立了可调平台。
We construct a continuum model of twisted trilayer graphene using {\it ab initio} density-functional-theory calculations, and apply it to address twisted trilayer electronic structure. Our model accounts for moiré variation in site energies, hopping between outside layers and within layers. We focus on the role of a mirror symmetry present in ABA graphene trilayers with a middle layer twist. The mirror symmetry is lost intentionally when a displacement field is applied between layers, and unintentionally when the top layer is shifted laterally relative to the bottom layer. We use two band stru…
We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r^3 power law decay for the long-distance behavior of the screened …
We study the electronic transport through np and npn junctions for AAA-stacked trilayer graphene. Two kinds of gates are considered where the first is a single gate and the second is a double gate. After obtaining the solutions for the energy spectrum, we use the transfer matrix method to determine the three transmission probabilities for each individual cone $τ=0, \pm 1$. We show that the quasiparticles in AAA-stacked trilayer graphene are not only chiral but also labeled by an additional cone index $τ$. The obtained bands are composed of three Dirac cones that depend on the chirality indexes…
We show that in van der Waals stacks of twisted hexagonal layers the proximity induced Rashba spin-orbit coupling can be affected by quantum interference. We calculate the quantum phase responsible for this effect in graphene--transition metal dichalcogenide bilayers as a function of interlayer twist angle. We show how this quantum phase affects the spin-polarization of the graphene bands and discuss its potential effect on spin-to-charge conversion measurements. In twisted trilayers symmetries can be broken as well as restored for certain twist angles. This can be used to deduce the effects o…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano oscillators, or bio-inspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2)…
We study the ground state properties of an ABA-stacked trilayer graphene. The low energy band structure can be described by a combination of both a linear and a quadratic particle-hole symmetric dispersions, reminiscent of monolayer- and bilayer-graphene, respectively. The multi-band structure offers more channels for instability towards ferromagnetism when the Coulomb interaction is taken into account. Indeed, if one associates a pseudo-spin 1/2 degree of freedom to the bands (parabolic/linear), it is possible to realize also a band-ferromagnetic state, where there is a shift in the energy ba…
