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arXiv 1109.2385cond-mat.mes-hall
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双栅ABA三层石墨烯的量子霍尔效应和半金属行为

Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

E. A. Henriksen, D. Nandi, J. P. Eisenstein

摘要:

多层石墨烯的电子结构强烈地依赖于层数以及堆叠顺序。在这里,我们探讨了纯ABA堆叠的三层石墨烯在双栅场效应器件配置的电子输运。我们发现,无论是零磁场运输和量子霍尔效应在高磁场是明显不同的单层和双层石墨烯,它们显示出强烈暗示的半金属带重叠的电子空穴不对称性。当ABA三层受到一个电场垂直于表,朗道能级分裂由于解除谷简并清楚地观察到。

英文摘要:

The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.

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