通过三层耦合设计二维混合阶拓扑绝缘体
Engineering Two-Dimensional Hybrid-Order Topological Insulators via Trilayer Coupling
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中文总结 AI 辅助
该研究提出层间工程方案，在耦合三层陈系统中实现二维混合阶拓扑绝缘体，通过层间隧穿杂化边缘态形成手性边缘模式并打开能隙，呈现边缘态与角态共存，绘制相图表明其对无序有鲁棒性，确定层间杂化是有效策略。
中文摘要 AI 辅助
我们提出一种层间工程方案，以在耦合三层陈系统中实现具有一阶和二阶拓扑相共存特征的二维混合阶拓扑绝缘体。从解耦极限下具有陈数\(\mathcal{C}_{1/2/3}=+1/-1/+1\)的三个量子反常霍尔层出发，层间隧穿将其边缘态杂化形成单一手性边缘模式，同时打开支持角态的能隙。因此，系统在同一体能隙内呈现一维手性边缘态和零维角态共存，这是混合阶拓扑的标志。此外，我们绘制了拓扑相图，并表明混合阶相对质量型无序具有鲁棒性。我们的结果表明层间杂化是在拓扑平台中设计共存边缘态和角态的一种最小且广泛适用的策略。
英文摘要
We propose an interlayer-engineering scheme to realize a two-dimensional hybrid-order topological insulator, characterized by the coexistence of first-order and second-order topological phases, in a coupled trilayer Chern system. Starting from three quantum anomalous Hall layers with Chern numbers $\mathcal{C}_{1/2/3}=+1/-1/+1$ in the decoupled limit, interlayer tunneling hybridizes their edge states into a single chiral edge mode, while simultaneously opening a gap that supports corner states. Consequently, the system exhibits the coexistence of one-dimensional chiral edge states and zero-dimensional corner states within the same bulk gap, a hallmark of the hybrid-order topology. Furthermore, we map out the topological phase diagram, and show that the hybrid-order phase is robust against mass-type disorder. Our results identify interlayer hybridization as a minimal and broadly applicable strategy for engineering coexisting edge and corner states within a topological platform.
