arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2103.09456cond-mat.str-el
收藏

双层铁磁半导体Cr2Ge2Te6的可调电子结构和磁各向异性

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Wen-ning Ren, Kui-juan Jin, Jie-su Wang, Chen Ge, Er-Jia Guo, Cheng Ma, Can Wang, Xiulai Xu

摘要:

二维范德华材料中铁磁性的出现引起了人们的广泛兴趣。然而,铁磁不稳定性一直是一个问题。在这项工作中,通过使用第一性原理计算,我们确定的临界范围内的应变和掺杂的双层Cr 2 Ge 2 Te 6的铁磁稳定性可以提高。在临界范围外,拉伸应变可引起铁磁到反铁磁的相变,而压应变的增加或静电掺杂可使易磁化轴方向由面外转变为面内。我们还预测了一个电子掺杂范围,在此范围内,铁磁性可以得到增强,同时保持铁磁性稳定。此外,我们发现,压缩应变可以逆转的自旋极化的电子在导带的最低点,使两类半金属可以诱导通过控制静电掺杂的双层Cr2Ge2Te6。这些结果将有助于实现低维材料的铁磁稳定性。

英文摘要:

The emergence of ferromagnetism in two-dimensional van der Waals materials has aroused broad interest. However, the ferromagnetic instability has been a problem remained. In this work, by using the first-principles calculations, we identified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6 within which the ferromagnetic stability can be enhanced. Beyond the critical range, the tensile strain can induce the phase transition from the ferromagnetic to the antiferromagnetic, and the direction of magnetic easy axis can be converted from out-of-plane to in-plane due to the increase of compressive strain, or electrostatic doping. We also predicted an electron doping range, within which the ferromagnetism can be enhanced, while the ferromagnetic stability was maintained. Moreover, we found that the compressive strain can reverse the spin polarization of electrons at the conduction band minimum, so that two categories of half-metal can be induced by controlling electrostatic doping in the bilayer Cr2Ge2Te6. These results should shed a light on achieving ferromagnetic stability for low-dimensional materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑