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arXiv 0906.2203cond-mat.str-el
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双层石墨烯中的门控可调荷声子效应

Gate tunable charged-phonon effect in bilayer graphene

A. B. Kuzmenko, L. Benfatto, E. Cappelluti, I. Crassee, D. van der Marel, P. Blake, K. S. Novoselov, A. K. Geim

摘要:

我们观察到一个巨大的增加的红外强度和软化的平面反对称声子模式Eu(~0.2 eV)在双层石墨烯作为栅极诱导掺杂的函数。声子峰具有明显的类Fano不对称性。我们认为,强度增长和软化起源于耦合的声子模式的窄电子跃迁之间的平行带相同的字符,而不对称性是由于与最低的空穴和电子带之间的连续跃迁的相互作用。峰的生长是先前在有机链状导体和掺杂富勒烯中观察到的“带电声子”效应的表现,该效应现在可以用栅极电压来调谐。

英文摘要:

We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (~0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak is a manifestation of the "charged-phonon" effect observed previously in organic chain conductors and doped fullerenes, which can now be tuned with the gate voltage.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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