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arXiv 0911.2647cond-mat.str-el
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无序和电子-声子相互作用对量子霍尔双层膜层间隧穿电流的影响

Effect of disorder and electron-phonon interaction on interlayer tunnelling current in quantum Hall bilayer

O. G. C. Ros, D. K. K. Lee

摘要:

我们研究了量子霍尔双层系统的输运性质,密切关注的影响,无序和电子-声子相互作用的层间隧穿电流的存在下的平面磁场$B_\parallel$。我们发现,重要的是要考虑到无序和电子-声子相互作用的影响,以预测在有限的电压有限的电流时,面内磁场存在。我们发现一个扩大的共振特征的隧道电流作为偏置电压的函数,在定性与实验一致。我们还发现,由于电子-声子耦合的共振特性的加宽有一个非单调依赖于$B_\parallel$,有关的双量子阱的几何形状。我们还比较了这与由于空间波动的隧穿振幅的加宽效果。我们的结论是,这样的静态无序只提供非常弱的扩大的共振功能在实验范围内。

英文摘要:

We study the transport properties of the quantum Hall bilayers systems looking closely at the effect that disorder and electron-phonon interaction have on the interlayer tunnelling current in the presence of an in-plane magnetic field $B_\parallel$. We find that it is important to take into account the effect of disorder and electron-phonon interactions in order to predict a finite current at a finite voltage when an in-plane magnetic field is present. We find a broadened resonant feature in the tunnelling current as a function of bias voltage, in qualitative agreement with experiments. We also find the broadening of this resonant feature due to electron-phonon coupling has a non-monotonic dependence on $B_\parallel$, related to the geometry of the double quantum well. We also compare this with the broadening effect due to spatial fluctuations of the tunnelling amplitude. We conclude that such static disorder provides only very weak broadening of the resonant feature in the experimental range.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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