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arXiv 2103.02332cond-mat.mtrl-sciphysics.app-ph
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压致晶格压缩加速MAPbI3钙钛矿热载流子冷却

Accelerated hot-carrier cooling in MAPbI3 perovskite by pressure-induced lattice compression

Loreta A. Muscarella, Eline M. Hutter, Jarvist M. Frost, Gianluca G. Grimaldi, Jan Versluis, Huib J. Bakker, Bruno Ehrler

摘要:

与传统半导体相比,在高密度区域中金属卤化物钙钛矿中的热载流子冷却(HCC)明显较慢。这种效应通常归因于热声子瓶颈,但对HCC行为的晶格性质的影响知之甚少。使用压力相关的瞬态吸收光谱(fs-TAS),我们发现,在激发密度低于莫特过渡,压力不影响HCC。相反,在Mott转变之上,甲基铵碘化铅(MAPbI 3)中的HCC在0.3GPa下比环境压力快大约两倍。我们的电子-声子耦合计算显示,约两倍强的电子-声子耦合的无机笼模式在0.3 GPa。然而,我们的实验表明,压力促进更快的HCC以上莫特转变。总而言之,这些发现表明在高密度制度中激发载流子的性质发生了变化,为在如此高的电荷载流子密度下工作的器件的电子行为提供了见解。

英文摘要:

Hot-carrier cooling (HCC) in metal halide perovskites in the high-density regime is significantly slower compared to conventional semiconductors. This effect is commonly attributed to a hot-phonon bottleneck but the influence of the lattice properties on the HCC behaviour is poorly understood. Using pressure-dependent transient absorption spectroscopy (fs-TAS) we find that at an excitation density below Mott transition, pressure does not affect the HCC. On the contrary, above Mott transition, HCC in methylammonium lead iodide (MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure. Our electron-phonon coupling calculations reveal about two times stronger electron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, our experiments reveal that pressure promotes faster HCC only above Mott transition. Altogether, these findings suggest a change in the nature of excited carriers in the high-density regime, providing insights on the electronic behavior of devices operating at such high charge-carrier density.

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