In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of the system. Here, we show a significant enhancement of photoresponse at the conducting interface of LaVO3-SrTiO3 under the simultaneous application of light and negative gate bias voltage, in comparison to their individual application. On the other hand, the LaVO3-SrTiO3 interface remains largely insensitive to light illumination, when a positive gate bias voltage is applied. Our X-ray diffractometer, Raman spectroscopy and photoemission measurements show that unlike the LaAlO3-SrTiO3 interface, migration of oxygen vacancies is not the prime mechanism for the enhanced photoresponse. Rather, we suggest that the photoresponse of our system is intrinsic and this intrinsic mechanism is a complex interplay between band filling, electric field at the interface, strong electron interaction due to mottness of LaVO3 and modification of conducting channel width.
Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we rev…
Appropriately designed transition metal oxide heterostructures involving small band gap Mott insulators are argued to support spatially separated electron and hole gasses at equilibrium. Spatial separations and carrier densities favoring the formation of excitonic states are achievable. The excitonic states may exhibit potentially novel properties. Energetic estimates are given, candidate material systems are discussed, and the possibility of large photvoltaic effects is mentioned
The study of complex oxides and oxide heterostructures have dominated the field of experimental and theoretical condensed matter research for the better part of the last few decades. Powerful experimental techniques like molecular beam epitaxy and pulsed laser deposition have made fabrication of oxide heterostructures with atomically sharp interfaces possible, while more and more sophisticated handling of exchange and correlations within first principles methods including density functional theory (DFT) supplemented with Hubbard U corrections and hybrid functionals, and beyond DFT techniques l…
We propose a method to systematically control carrier densities at the interface of transition-metal oxide heterostructures without introducing disorders. By inserting non-polar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control the total carrier densities per unit cell systematically up to high values of the order unity.
Transition metal oxide heterostructures often, but by far not always, exhibit strong electronic correlations. State-of-the-art calculations account for these by dynamical mean field theory (DMFT). We discuss the physical situations in which DMFT is needed, not needed, and where it is actually not sufficient. By means of an example, SrVO$_3$/SrTiO$_3$, we discuss step-by-step and figure-by-figure a density functional theory(DFT)+DMFT calculation. The second part reviews DFT+DMFT calculations for oxide heterostructure focusing on titanates, nickelates, vanadates, and ruthenates.
Epitaxial heterostructures composed of complex oxides have fascinated researchers for over a decade as they offer multiple degrees of freedom to unveil emergent many-body phenomena often unattainable in bulk. Recently, apart from stabilizing such artificial structures along the conventional [001]-direction, tuning the growth direction along unconventional crystallographic axes has been highlighted as a promising route to realize novel quantum many-body phases. Here we illustrate this rapidly developing field of geometrical lattice engineering with the emphasis on a few prototypical examples of…
We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.
We construct the general free energy governing long-wavelength magnetism in two-dimensional oxide heterostructures, which applies irrespective of the microscopic mechanism for magnetism. This leads, in the relevant regime of weak but non-negligible spin-orbit coupling, to a rich phase diagram containing in-plane ferromagnetic, spiral, cone, and skyrmion lattice phases, as well as a nematic state stabilized by thermal fluctuations. The general conclusions are vetted by a microscopic derivation for a simple model with Rashba spin-orbit coupling.
Topological band insulators which are dynamically generated by electron-electron interactions have been the- oretically proposed in two and three dimensional lattice models. We present evidence that the two-dimensional version can be stabilized in digital (111) heterostructures of transition-metal oxides as a result of purely local interactions. The topological phases are accompanied by spontaneous ordering of complex orbitals and we discuss their stability with respect to the Hund's rule coupling, Jahn-Teller interaction and inversion symmetry breaking terms. As main competitors we identify s…
Using a combination of density functional theory, tight-binding models, and Hartree-Fock theory, we predict topological phases with and without time-reversal symmetry breaking in oxide heterostructures. We consider both heterostructures containing light transition metal ions, and those containing heavy transition metal ions. We find the (111) growth direction naturally leads to favorable conditions for topological phases in both perovskite structures and pyrochlore structures. For the case of light transition metal elements, Hartree-Fock theory predicts the spin-orbit coupling is effectively e…
Transition metal oxides are well known for their complex magnetic and electrical properties. When brought together in heterostructure geometries, they show particular promise for spintronics and colossal magnetoresistance applications. In this letter, we propose a new mechanism for the coupling between layers of itinerant ferromagnetic materials in heterostructures. The coupling is mediated by charge carriers that strive to maximally delocalize through the heterostructure to gain kinetic energy. In doing so, they force a ferromagnetic or antiferromagnetic coupling between the constituent layer…
Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin…
Oxide heterostructures are a new class of materials by design, that open the possibility for engineering challenging electronic properties, in particular correlation effects beyond an effective single-particle description. This short review tries to highlight some of the demanding aspects and questions, motivated by the goal to describe the encountered physics from first principles. The state-of-the-art methodology to approach realistic many-body effects in strongly correlated oxides, the combination of density functional theory with dynamical mean-field theory, will be briefly introduced. Dis…
In the two-dimensional electron gas (2DEG) emerging at the transition metal oxide surface and interface, it has been pointed out that the Rashba spin-orbit interaction, the momentum-dependent spin splitting due to broken inversion symmetry and atomic spin-orbit coupling, can have profound effects on electronic ordering in the spin, orbit, and charge channels, and may help give rise to exotic phenomena such as ferromagnetism-superconductivity coexistence and topological superconductivity. Although a large Rashba splitting is expected to improve experimental accessibility of such phenomena, it h…
We present a combined study of Ni $K$-edge resonant x-ray scattering and density functional calculations to probe and distinguish electronically driven ordering and lattice distortions in nickelate heterostructures. We demonstrate that due to the low crystal symmetry, contributions from structural distortions can contribute significantly to the energy-dependent Bragg peak intensities of a bond-ordered NdNiO$_3$ reference film. For a LaNiO$_3$-LaAlO$_3$ superlattice that exhibits magnetic order, we establish a rigorous upper bound on the bond-order parameter. We thus conclusively confirm predic…
Kitaev quantum spin liquid, massively quantum entangled states, is so scarce in nature that searching for new candidate systems remains a great challenge. Honeycomb heterostructure could be a promising route to realize and utilize such an exotic quantum phase by providing additional controllability of Hamiltonian and device compatibility, respectively. Here, we provide epitaxial honeycomb oxide thin film Na3Co2SbO6, a candidate of Kitaev quantum spin liquid proposed recently. We found a spin glass and antiferromagnetic ground states depending on Na stoichiometry, signifying not only the import…
We highlight recent advances in the theory, materials fabrication, and experimental characterization of strongly correlated and topological states in [111] oriented transition metal oxide thin films and heterostructures, which are notoriously difficult to realize compared to their [001] oriented counterparts. We focus on two classes of complex oxides, with the chemical formula ABO3 and A2B2O7, where the B sites are occupied by an open-shell transition metal ion with a local moment, and the A sites are typically a rare earth. The [111] oriented quasi-two-dimensional lattices derived from these …
We show how in principle a coherent coupling between two superconductors of opposite parity can be realized in a three-layer oxide heterostructure. Due to strong intraionic spin-orbit coupling in the middle layer, singlet Cooper pairs are converted into triplet ones and vice versa. This results in a large enhancement of the triplet superconductivity, persisting well above the native triplet critical temperature.
We report on the non-trivial nanoscale kinetics of the deposition of novel complex oxide heterostructures composed of a unit-cell thick correlated metal LaNiO3 and dielectric LaAlO3. The multilayers demonstrate exceptionally good crystallinity and surface morphology maintained over the large number of layers, as confirmed by AFM, RHEED, and synchrotron X-ray diffraction. To elucidate the physics behind the growth, the temperature of the substrate and the deposition rate were varied over a wide range and the results were treated in the framework of a two-layer model. These results are of fundam…
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Magnetization measurements show clear ferromagnetic behavior of the magnetite layers with a saturation magnetization of 3.2 muB/f.u. at 300 K. Our results demonstrate that the Fe3O4/ZnO system is an intrig…
We develop the multi-scale ab-initio scheme for correlated electrons (MACE) for transitionmetal-oxide heterostructures, and determine the parameters of the low-energy effective model. By separating Ti t2g bands near the Fermi level from the global Kohn-Sham (KS) bands of LaAlO3/SrTiO3 which are highly entangled with each other, we are able to calculate the parameters of the low-energy effective model of the interface with the help of constrained random phase approximation (cRPA). The on-site energies of the Ti t2g orbitals in the 1stlayer is about 650 meV lower than those in the 2nd-layer. In …
Oscillations in the exchange coupling between ferromagnetic $La_{2/3}Ba_{1/3}MnO_3$ layers with paramagnetic $LaNiO_3$ spacer layer thickness has been observed in epitaxial heterostructures of the two oxides. This behavior is explained within the RKKY model employing an {\it ab initio} calculated band structure of $LaNiO_3$, taking into account strong electron scattering in the spacer. Antiferromagnetically coupled superlattices exhibit a positive current-in-plane magnetoresistance.
We have studied the local critical current density, jc, in the superconductor thin film of bilayer structures consisting of YBa2Cu3O7 and the ferromagnets La2/3Ca1/3MnO3 and SrRuO3, respectively, by means of quantitative magneto-optics. A pronounced hysteresis of jc was observed which is ascribed to the magnetization state of the ferromagnetic layer. The results are discussed within the frame of magnetic vortex - wall interactions.
We demonstrate that the charge distributions in Hubbard-model representations of transition metal oxide heterojucntions can be described by a Thomas-Fermi theory in which the energy is approximated as the sum of the electrostatic energy and the uniform three-dimensional Hubbard model energy per site at the local density equals to a constant. When charged atomic layers in the oxides are approximated as two-dimensional sheets with uniform charge density, the electrostatic energy is simply evaluated. We find that this Thomas-Fermi theory can reproduce results obtained from full Hartree-Fock theor…
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferr…
The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the ferroelectric heterostructure BiAlO3/BiIrO3, where the complex interplay among trigonal crystal field, layer degrees of freedom and spin-orbit coupling mediates a strong spin-valley coupling. Furthermore, we show that ferroelectricity provides a non-volatile handle to manipulate and switch the emerging valley-contrasting spin polarization.
We report on a systematic study of a number of structurally identical but chemically distinct transition metal oxides in order to determine how the material-specific properties such as the composition and the strain affect the properties at the interface of heterostructures. Our study considers a series of structures containing two layers of ferromagnetic SrRuO3, with antiferromagnetic insulating manganites sandwiched in between. The results demonstrate how to control the strength and relative orientation of interfacial ferromagnetism in correlated electron materials by means of valence state …
Correlated oxide heterostructures pose a challenging problem in condensed matter research due to their structural complexity interweaved with demanding electron states beyond the effective single-particle picture. By exploring the correlated electronic structure of SmTiO$_3$ doped with few layers of SrO, we provide an insight into the complexity of such systems. Furthermore, it is shown how the advanced combination of band theory on the level of Kohn-Sham density functional theory with explicit many-body theory on the level of dynamical mean-field theory provides an adequate tool to cope with …
Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults, but smoother interfaces and generally hi…
Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivity, magnetism, and ferroelasticity, all of which are gate-tunable, demonstrating their promise for fundamental discovery and technological innovation alike. To fully exploit this richness, it is neces…
In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas …
The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a non-trivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of …
The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization states can be further enhanced by the electrostatic modification in the correlated electron oxide electrodes, and that FTJs with nanometer thin layers can effectively produce a considerably large elec…
Magnetism and transport are two key functional ingredients in modern electronic devices. In oxide heterostructures, ferroelectricity can provide a new route to control these two properties via electrical operations, which is scientifically interesting and technologically important. In this Brief Review, we will introduce recent progresses on this fast developing research field. Several subtopics will be covered. First, the ferroelectric polarization tuning of interfacial magnetism will be introduced, which includes the tuning of magnetization, easy axis, magnetic phases, as well as exchange bi…
Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selecti…
LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms d…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet La$_2$CuO$_4$ and ferromagnetic (La,Sr)MnO$_3$ synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can b…
Experiments demonstrating the controlled growth of oxide heterostructures have raised the prospect of realizing topologically nontrivial states of correlated electrons in low dimensions. Here, we study heterostructures consisting of {111}-bilayers of double perovskites separated by inert band insulators. In bulk, these double perovskites have well-defined local moments interacting with itinerant electrons leading to high temperature ferromagnetism. Incorporating spin-orbit coupling in the two-dimensional honeycomb geometry of a {111}-bilayer, we find a rich phase diagram with tunable ferromagn…
Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces are under intensive investigation, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying …
Heterostructures composed of ferromagnetic La0.7Sr0.3MnO3, ferromagnetic SrRuO3, and superconducting YBa2Cu3Ox were studied experimentally. Structures of composition Au/La0.7Sr0.3MnO3/SrRuO3/YBa2Cu3Ox were prepared by pulsed laser deposition, and their high quality was confirmed by X-ray diffraction and reflectometry. A non-collinear magnetic state of the heterostructures was revealed by means of SQUID magnetometry and polarized neutron reflectometry. We have further observed superconducting currents in mesa-structures fabricated by deposition of a second superconducting Nb layer on top of the…
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properti…
Using micromagnetic simulations, we have modelled the formation of imprinted merons and anti-merons in cobalt overlayers of different thickness (1-8 nm), stabilised by interfacial exchange with antiferromagnetic vortices in $α$-Fe2O3. Structures similar to those observed experimentally could be obtained with reasonable exchange parameters, also in the presence of surface roughness. We produce simulated meron|antimeron images by magnetic force microscopy (MFM) and nitrogen-vacancy (N-V) centre microscopy, and established signatures of these topological structures in different experimental confi…
A microscopic model Hamiltonian for the ferroelectric field effect is introduced for the study of oxide heterostructures with ferroelectric components. The long-range Coulomb interaction is incorporated as an electrostatic potential, solved self-consistently together with the charge distribution. A generic double-exchange system is used as the conducting channel, epitaxially attached to the ferroelectric gate. The observed ferroelectric screening effect, namely the charge accumulation/depletion near the interface, is shown to drive interfacial phase transitions that give rise to robust magneto…
Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronics applications. Here, based on first-principles calculations, we propose a novel surface La interstitial promoted interface insulator-metal transition in LaAlO3/SrTiO3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAlO3/SrTiO3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in ambient atmospheric envi…
Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. I…
We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is realized. The developed theoretical model based on multilayer magnetic structure of M-interlayer and experiment show presence of the long-range proximity effect at S/M-interface with antiferromagnetic (AF) ordering of the interlayer magnetization. The investigated hybrid heterostructures include cuprate superconductor, the AF-cuprate interlayer and conventional sup…
We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of our approach to other materials and symmetries is considered. We thus establish ferroic trilayer structures as device components in which symmetry-driven charge-, spin-, and strain-related functionaliti…
Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin fil…
We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can be achieved for the case of a single SrO layer in a GdTiO$_3$ matrix. In the dimer Mott insulator, electrons are localized not to individual atoms but to bonding orbitals on molecular dimers formed across a bilayer of two TiO$_2$ planes, and is analogous to the Mott insulating state of Hubbard ladders, studied in the 1990s. We verify the existence of the di…
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transitio…
We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO$_3$ (LVO) and capping LaAlO$_3$ (LAO) layers in the multilayer structure of LVO sandwiched between LAO. We found that the change of the valence of V as a function of LAO layer thickness can be qualitatively explained by a transition between electronically reconstructed interfaces and a chemical reconstruction. The change as a function of LVO layer thickness is complicated by the presence of a considerable amount of V$^{4+}$ in the bulk of the thicker LVO layers.
Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here we determine the effect of the cubic-tetragonal distortion of $\text{SrTiO}_3$ on the electronic properties of thin films of $\text{SrIrO}_3$, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, $\tex…
We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de H…
